VBsemi-Elec-VBZE2N60
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VBZE2N60
Power MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
•
Halogen-free According to IEC 61249-2-21
600
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFRC20, SiHFRC20)
• Straight Lead (IRFUC20, SiHFUC20)
• Available in Tape and Reel
• Fast Switching
R
DS(on)
(
Ω
)
V
GS
= 10 V
4.4
Q
g
(Max.) (nC)
Q
gs
(nC)
18
3.0
Q
gd
(nC)
8.9
Configuration
Single
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
TO-251
TO-220AB
D
TO-220 FULLPAK
TO-252
G
S
S
G
D
S
D
G
G
D
S
G D
S
N-Channel MOSFET
Top View
Top
V
ie
w
Top
V
ie
w
Top View
VBM16R02
VBMB16R02
VBE16R02
VBFB16R02
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
600
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
V
20
T
C
= 25 °C
2.0
Continuous Drain Current
V
GS
at 10 V
I
D
T
C
= 100 °C
1.3
A
Pulsed Drain Current
a
I
DM
8.0
Linear Derating Factor
0.33
0.020
74
W/°C
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
E
AS
I
AR
mJ
A
2.0
Repetitive Avalanche Energy
a
E
AR
4.2
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
T
C
= 25 °C
42
P
D
W
V/ns
°C
T
A
= 25 °C
2.5
dV/dt
3.0
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
– 55 to + 150
260
d
for 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 37 mH, R
g
= 25
Ω
, I
AS
= 2.0 A (see fig. 12).
c. I
SD
≤
2.0 A, dI/dt
≤
40 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6
mm from case.
e. When
mounted on 1″ square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
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1
VBZE2N60
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
R
thJA
R
thJC
–
–
110
Maximum Junction-to-Ambient
(PCB Mount)
a
–
–
–
–
50
°C/W
Maximum Junction-to-Case (Drain)
3.0
Note
a. When
mounted on 1″ square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
600
–
–
V
V/°C
V
V
DS
Temperature Coefficient
–
2.0
–
0.88
–
Gate-Source Threshold Voltage
Gate-Source Leakage
–
–
4.0
100
100
500
V
GS
=
20 V
nA
V
DS
= 600 V, V
GS
= 0 V
–
–
Zero Gate Voltage Drain Current
I
DSS
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
–
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
V
GS
= 10 V
I
D
= 1.2 A
b
–
4.4
–
Ω
–
V
DS
= 50 V, I
D
= 1.2 A
1.4
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
350
48
8.6
–
–
–
V
GS
= 0 V,
V
DS
= – 25 V,
f = 1.0 MHz, see fig. 5
pF
nC
–
18
3.0
8.9
–
I
D
= 2.0 A, V
DS
= 360 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
–
–
10
23
30
25
–
V
DD
= 300 V, I
D
= 2.0 A,
ns
R
g
= 18
Ω
, R
D
= 135
Ω
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
D
Between lead,
Internal Drain Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
D
MOSFET symbol
showing the
integral reverse
p – n junction diode
I
S
–
–
–
–
2.0
8.0
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 2.0 A, V
GS
= 0 V
b
–
–
–
–
1.6
580
1.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
290
0.67
ns
μC
T
J
= 25 °C, I
F
= 2.0 A, dI/dt = 100 A/μs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
≤
300 μs; duty cycle
≤
2 %.
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VBZE2N60
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 2 – Typical Output Characteristics, T
C
= 150 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
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3
VBZE2N60
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
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4
VBZE2N60
R
D
V
DS
V
GS
D.U.T.
R
g
+
–
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
VBZE2N60
L
V
DS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
D.U.T
R
g
+
–
V
DD
V
DS
I
AS
10 V
0.01
Ω
t
p
I
AS
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
V
GS
12 V
0.2 µF
0.3 µF
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
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6
VBZE2N60
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
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VBZE2N60
TO-220AB
MILLIMETERS
MIN.
INCHES
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
8
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VBZE2N60
TO-220 FULLPAK (HIGH VOLTAGE)
A
E
A1
Ø P
n
d1
d3
D
u
L1
V
L
b
3
A2
b
2
c
b
e
MILLIMETERS
INCHES
DIM.
A
MIN.
4.570
2.570
2.510
0.622
1.229
1.229
0.440
8.650
15.88
12.300
10.360
MAX.
4.830
2.830
2.850
0.890
1.400
1.400
0.629
9.800
16.120
12.920
10.630
MIN.
0.180
0.101
0.099
0.024
0.048
0.048
0.017
0.341
0.622
0.484
0.408
MAX.
0.190
0.111
0.112
0.035
0.055
0.055
0.025
0.386
0.635
0.509
0.419
A1
A2
b
b2
b3
c
D
d1
d3
E
e
2.54 BSC
0.100 BSC
L
13.200
3.100
6.050
3.050
2.400
0.400
13.730
3.500
6.150
3.450
2.500
0.500
0.520
0.122
0.238
0.120
0.094
0.016
0.541
0.138
0.242
0.136
0.098
0.020
L1
n
Ø P
u
v
ECN: X09-0126-Rev. B, 26-Oct-09
DWG: 5972
Notes
1. To be used only for process drawing.
2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads.
3. All critical dimensions should C meet C
pk
> 1.33.
4. All dimensions include burrs and plating thickness.
5. No chipping or package damage.
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VBZE2N60
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
0.086
–
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
10
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VBZE2N60
TOĆ251AA (DPAK)
E
A
L2
b2
c1
MILLIMETERS
INCHES
Dim
A
A1
b
b1
b2
c
c1
D
Min
2.21
0.89
0.71
0.76
5.23
0.46
0.46
5.97
6.48
Max
2.38
1.14
0.89
1.14
5.43
0.58
0.58
6.22
6.73
Min
0.087
0.035
0.028
0.030
0.206
0.018
0.018
0.235
0.255
Max
0.094
0.045
0.035
0.045
0.214
0.023
0.023
0.245
0.265
D
L3
L1
b1
E
L
2.28 BSC
0.090 BSC
e
8.89
1.91
0.89
1.15
9.53
2.28
1.27
1.52
0.350
0.075
0.035
0.045
0.375
0.090
0.050
0.060
L
L1
L2
L3
b
e
c
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
A1
Note: Dimension
L3 is for reference only.
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11
VBZE2N60
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
