VBsemi-Elec-VBZFB40N03
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VBZFB40N03
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free
V
DS
(V)
R
DS(on)
Q
g
(Typ.)
（
m
Ω
）
I
D
(A)
TrenchFET
®
Gen III Power MOSFET
100 % R
g
Tested
7 at
V
GS
= 10 V
9 at
V
GS
= 4.5 V
5
0
RoHS
30
19 nC
COMPLIANT
•
100 % UIS Tested
4
5
APPLICATIONS
TO-251
•
DC/DC Conversion
– System Power
D
G
S
N
-Channel MOSFET
G
D
S
Top View
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
Limit
30
± 20
5
0
Unit
V
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
4
5
Continuous Drain Current (T
J
= 150 °C)
I
D
14
b, c
10
b, c
1
50
A
I
DM
I
AS
E
AS
Pulsed Drain Current
Avalanche Current
Avalanche Energy
25
40
15
2.9
b, c
28
L = 0.1 mH
mJ
A
T
C
= 25 °C
Continuous Source-Drain Diode Current
I
S
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
18
Maximum Power Dissipation
P
D
W
3.5
b, c
2.2
b, c
– 55 to 150
260
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
R
thJC
Typical
29
Maximum
Unit
t
≤
10 s
Steady State
36
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
°C/W
3.6
4.5
Notes:
a. Based
on T
C
= 25 °C.
b. Surface
Mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
服务热线：400-655-8788
1
VBZFB40N03
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS
T
e
mperature Coefficient
33
– 5
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 10 V
V
GS
=
10
V
,
I
D
= 10 A
Gate-Source Threshold Voltage
Gate-Source Leakage
1.2
15
3.0
± 100
1
V
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
5
7
Drain-Source On-State Resistance
a
m
Ω
S
V
GS
=
4.5
V
,
I
D
= 7 A
9
Forward
T
r
ansconductance
a
24
V
DS
= 15
V
,
I
D
= 10 A
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
1
7
00
200
150
33
V
DS
= 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= 15
V
,
V
GS
= 10
V
,
I
D
= 10 A
Q
g
T
o
tal Gate Charge
18
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
7.3
V
DS
= 15
V
,
V
GS
= 4.5
V
,
I
D
= 10 A
f = 1 MHz
Gate-Drain Charge
6.2
0.8
15
12
13
10
9
Gate Resistance
0.2
1.6
30
24
26
20
18
18
28
16
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
V
DD
= 15
V
,
R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
9
V
DD
= 15
V
,
R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
14
8
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
16
32
1.2
34
19
A
I
S
= 3 A, V
GS
=
0 V
0.78
17
9.5
10
7
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
VBZFB40N03
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
8
6
4
2
0
V
GS
= 10 thr
u
5
V
V
= 4
V
GS
40
30
20
10
0
T
C
= 25 °C
V
= 3
V
GS
T
C
= 125 °C
T
C
= – 55 °C
10
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
DS
Output Characteristics
Transfer Characteristics
0.025
0.020
0.015
0.010
0.005
1250
1000
750
500
250
0
C
iss
C
V
= 10
V
oss
GS
C
rss
0
10
20
30
5
0
6
0
0
5
10
15
20
25
30
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.
8
1.6
1.4
1.2
1.0
0.
8
0.6
10
8
I
= 10 A
D
I
= 10 A
D
V
GS
= 10
V
V
DS
= 10
V
V
= 15
V
DS
6
V
DS
= 20
V
V
GS
= 4.5
V
4
2
0
– 50
– 25
0
25
50
75
100 125 150
0.0
3.2
6.4
9.6
12.
8
16.0
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
–
T
o
tal Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
服务热线：400-655-8788
3
VBZFB40N03
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.06
0.05
0.04
0.03
0.02
0.01
0.00
I
= 10 A
D
T
J
= 150 °C
10
1
T
J
= 25 °C
0.1
0.01
T
= 125 °C
= 25 °C
J
T
J
0.001
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
120
96
72
4
8
24
0
0.4
0.2
0.0
– 0.2
– 0.4
– 0.6
– 0.
8
I
= 5 mA
D
I
= 250
µ
A
D
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
–
T
e
mperat
u
re (°C)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
DC
B
V
DSS
Limited
T
= 25 °C
A
Single P
u
lse
0.01
0.01
0.1
1
10
100
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
VBZFB40N03
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
32
24
Package Limited
16
8
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
2.0
35
2
8
21
14
7
1.6
1.2
0.
8
0.4
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Case
T
e
mperat
u
re (°C)
T
C
– Case
T
e
mperat
u
re (°C)
Power, Junction-to-Ambient
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
VBZFB40N03
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
0.02
1. D
u
ty Cycle, D =
2
2. Per Unit Base = R
=
8
1 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
6
VBZFB40N03
TOĆ251AA (DPAK)
E
A
L2
b2
c1
MILLIMETERS
INCHES
Dim
A
A1
b
b1
b2
c
c1
D
Min
2.21
0.89
0.71
0.76
5.23
0.46
0.46
5.97
6.48
Max
2.38
1.14
0.89
1.14
5.43
0.58
0.58
6.22
6.73
Min
0.087
0.035
0.028
0.030
0.206
0.018
0.018
0.235
0.255
Max
0.094
0.045
0.035
0.045
0.214
0.023
0.023
0.245
0.265
D
L3
L1
b1
E
L
2.28 BSC
0.090 BSC
e
3.89
1.91
0.89
1.15
9.53
2.28
1.27
1.52
0.153
0.075
0.035
0.045
0.375
0.090
0.050
0.060
L
L1
L2
L3
b
e
c
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
A1
Note: Dimension
L3 is for reference only.
服务热线：400-655-8788
7
VBZFB40N03
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
