VBsemi-Elec-XP161A11A1PR-VB
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XP161A11A1PR
N-Channel
30
-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
I
D
(A)
a
6.8
•
TrenchFET
®
Power MOSFET
0.022 at V
GS
= 4.5 V
0.0
30
at V
GS
= 2.5 V
RoHS
30
10 nC
COMPLIANT
APPLICATIONS
6.0
•
Load Switches for Portable Devices
D
D
G
S
G
D
S
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
30
± 20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
V
6.8
a
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
6
a
Continuous Drain Current (T
J
= 150 °C)
I
D
6.
8
a,
b
, c
6
a, b, c
30
5.2
2.1
b, c
A
Pulsed Drain Current
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
T
A
= 70 °C
6.3
4
P
D
Maximum Power Dissipation
W
2.5
b, c
1.6
b, c
T
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
e, f
– 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a, c, d
t
≤
5 s
Steady State
R
thJA
R
thJF
40
50
20
°C/W
Maximum Junction-to-Foot (Drain)
15
Notes:
a. Package limited, T
C
= 25 °C.
b. Surface Mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework
Conditions: manual soldering with a soldering iron is not recommended for leadless components.
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1
XP161A11A1PR
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
30
V
DS
T
e
mperature Coefficient
25
mV/°C
V
GS(th)
T
e
mperature Coefficient
– 4.0
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 30
V
,
V
GS
= 0 V
Gate-Source Threshold Voltage
Gate-Source Leakage
0.6
30
1.5
± 100
1
V
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
µA
A
V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 4.5 V
V
GS
=
4.5
V
,
I
D
= 6.3 A
V
GS
=
2.5
V
,
I
D
= 4.5 A
V
DS
= 10
V
,
I
D
= 6.3 A
10
On-State Drain Current
a
0.022
0.030
45
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Ω
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
1200
220
100
22
V
DS
= 10
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
V
DS
= 10
V
,
V
GS
= 10
V
,
I
D
= 6.3 A
33
15
Q
g
T
o
tal Gate Charge
10
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 6.3 A
f = 1 MHz
2.5
1.7
2.4
15
Gate-Drain Charge
Gate Resistance
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-on Delay Time
25
15
55
20
15
20
40
15
Rise Time
10
V
DD
= 10
V
,
R
L
= 1.5
Ω
I
D
≅
6.7 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
35
Fall Time
12
ns
T
u
rn-on Delay Time
10
Rise Time
12
V
DD
= 10
V
,
R
L
= 1.5
Ω
I
D
≅
6.7 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
25
Fall Time
10
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
5.2
30
A
I
S
= 6.7 A, V
GS
= 0 V
0.8
20
10
10
10
1.2
40
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
20
I
F
= 6.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
XP161A11A1PR
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
8
30
V
GS
= 5 thr
u
3
V
T
= – 55 °C
C
24
1
8
12
6
6
T
C
= 125 °C
V
GS
= 2.5V
4
2
T
C
= 25 °C
1.0
V
GS
= 1
V
V
GS
= 1.5
V
0
0.0
0
0.5
1.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
1500
1200
900
600
300
0
0.032
0.030
0.028
0.026
0.024
0.022
0.020
0.018
0.016
C
iss
V
= 2.5
V
GS
V
GS
= 4.5
V
C
oss
C
rss
0
5
10
15
20
0
6
12
1
8
24
30
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
I
– Drain C
u
rrent (A)
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.6
1.4
1.2
1.0
0.
8
0.6
I
D
=
6
6.3 A
I
D
=
6
6.3 A
V
= 4.5
V
, 2.5
V
GS
V
= 10
V
DS
6
V
DS
= 16
V
4
2
0
0
5
10
15
20
25
– 50
– 25
0
T –
J
u
nction
T
e
mperat
u
re (°C)
J
25
50
75
100 125 150
Q
g
–
T
o
tal Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
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3
XP161A11A1PR
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.050
0.040
0.030
0.020
0.010
0.000
100
I
= 6.3
A
D
T
J
= 150 °C
T
J
= 25 °C
10
T
= 125 °C
= 25 °C
J
T
J
1
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
1
2
3
4
5
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.4
50
40
I
D
= 250
µ
A
1.2
1.0
0.
8
0.6
0.4
30
20
10
0
– 50
– 25
0
25
50
75
100 125 150
0.001 0.01
0.1
1
10
100
600
Time (s)
T
J
–
T
e
mperat
u
re (°C)
Single Pulse Power
Threshold Voltage
100
Limited
b
y R
*
DS(on)
100
µ
s
10
1
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
B
V
DSS
Limited
T
= 25 °C
A
Single P
u
lse
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
XP161A11A1PR
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
8
8
6
4
2
0
15
12
9
Package Limited
6
3
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Case Temperat
u
re (°C)
T
C
– Case Temperat
u
re (°C)
Power Derating
Current Derating*
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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5
XP161A11A1PR
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
0.02
2. Per Unit Base = R
=
8
0 °C/
W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
XP161A11A1PR
Package outline – SOT89
D
A
C
D1
E
E1
H
L
B
e
B1
e1
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
1.60
0.56
0.48
0.44
4.60
1.83
Min
Max
Min
Max
2.60
2.29
Min
Max
0.102
0.090
A
B
1.40
0.44
0.36
0.35
4.40
1.62
0.550
0.017
0.014
0.014
0.173
0.064
0.630
0.022
0.019
0.017
0.181
0.072
E
E1
e
2.29
2.13
0.090
0.084
B1
C
1.50 BSC
3.00 BSC
0.059 BSC
0.118 BSC
e1
H
D
3.94
0.89
4.25
1.20
0.155
0.035
0.167
0.047
D1
L
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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7
XP161A11A1PR
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
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names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
