Vishay-Intertech-IRF830PbF
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IRF830, SiHF830
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
V
DS
(V)
500
Available
• Repetitive Avalanche Rated
• Fast Switching
R
DS(on)
(
)
V
GS
= 10 V
1.5
RoHS*
Q
g
(Max.) (nC)
38
5.0
COMPLIANT
• Ease of Paralleling
Q
Q
gs
(nC)
gd
(nC)
• Simple Drive Requirements
22
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220AB
IRF830PbF
SiHF830-E3
IRF830
Lead (Pb)-free
SnPb
SiHF830
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
500
V
V
GS
20
T
C
= 25 °C
4.5
Continuous Drain Current
V
GS
at 10 V
I
D
T
C
= 100 °C
2.9
A
Pulsed Drain Current
a
I
DM
18
0.59
280
Linear Derating Factor
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
4.5
E
AR
7.4
mJ
W
Maximum Power Dissipation
T
C
= 25 °C
P
D
74
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
3.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
– 55 to + 150
300
d
10
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 24 mH, R
g
= 25
, I
AS
= 4.5 A (see fig. 12).
c. I
SD
4.5 A, dI/dt
75 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6
mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
1
This datasheet is subject to change without notice.
IRF830, SiHF830
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R
thJA
R
thCS
R
thJC
–
0.50
–
–
°C/W
1.7
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
500
–
–
–
V
V/°C
V
–
2.0
–
0.61
–
–
–
–
–
–
4.0
V
GS
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 2.7 A
b
V
DS
= 50 V, I
D
= 2.7 A
b
=
20 V
100
25
nA
–
Zero Gate Voltage Drain Current
I
DSS
μA
–
250
1.5
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
–
2.5
S
V
GS
= 0 V,
V
DS
= 25 V,
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
610
160
68
–
–
–
Output Capacitance
pF
nC
Reverse Transfer Capacitance
f = 1.0 MHz, see fig. 5
Total Gate Charge
Q
g
–
–
–
–
38
I
D
= 3.1 A, V
DS
= 400 V,
see fig. 6 and 13
b
Gate-Source Charge
Q
gs
V
GS
= 10 V
5.0
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
gd
t
d(on)
t
r
–
–
–
–
–
–
22
–
8.2
16
42
16
–
V
DD
= 250 V, I
D
= 3.1 A
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
R
g
= 12
, R
D
= 79
, see fig. 10
b
–
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
Continuous Source-Drain Diode Current
I
S
–
–
–
4.5
18
A
G
Pulsed Diode Forward Current
a
I
SM
–
–
S
T
J
= 25 °C, I
S
= 4.5 A, V
GS
= 0 V
b
1.6
640
2.0
V
Body Diode Voltage
V
SD
t
rr
–
–
–
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
320
1.0
ns
μC
T
J
= 25 °C, I
F
= 3.1 A, dI/dt = 100 A/μs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
300 μs; duty cycle
2 %.
2
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRF830, SiHF830
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
V
GS
15 V
10
1
10
1
T
o
p
10 V
150
°
C
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
25
°
C
10
0
10
0
Bottom
4.5 V
10
-1
20 µs Pulse Width
T
C
=
25 °C
20 µs Pulse Width
V
DS
=
50 V
10
-1
10
0
10
1
4
5
6
7
8
9
10
V
DS
, Drain-to-Source Voltage (V)
91063_01
V
GS
,
Gate-to-Source Voltage (V)
91063_03
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
3.0
2.5
V
GS
15 V
10 V
I
D
= 3.1 A
V
GS
= 10 V
10
1
T
o
p
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
2.0
1.5
1.0
4.5 V
10
0
Bottom
0.5
0.0
20 µs Pulse Width
T
C
=
150 °C
10
-1
10
0
10
1
– 60 – 40 – 20
0
20 40 60 80
100 120
140 160
V
DS
,
Drain-to-Source Voltage (V)
91063_02
91063_04
T
J
,
Junction
T
e
mperature (°C)
Fig. 2 – Typical Output Characteristics, T
C
= 150 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
3
This datasheet is subject to change without notice.
IRF830, SiHF830
Vishay Siliconix
1500
V
GS
= 0
V
, f = 1
M
Hz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
10
1
1250
1000
750
500
250
0
150
°
C
C
oss
= C
ds
+ C
gd
25
°
C
C
iss
C
oss
10
0
V
GS
= 0 V
1.2
1.0
C
rss
10
0
10
1
0.4
0.6
0.8
V
SD
, Source-to-Drain Voltage (V)
91063_07
V
DS
,
Drain-to-Source Voltage (V)
91063_05
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
20
10
2
5
I
D
= 3.1 A
Operation in this area limited
by R
DS(on)
V
DS
= 400 V
2
16
12
10
µs
10
5
V
DS
= 250 V
100
µs
V
DS
= 100 V
2
1
ms
1
5
8
4
0
10
ms
2
0.1
5
T
C
= 25
°
C
T
J
= 150
°
C
Single Pulse
For test circuit
see figure 13
2
10
-2
2
5
2
5
2
5
5
10
2
10
3
5
2
0.1
2
10
10
4
0
16
40
8
24
32
1
Q
G
,
T
o
tal Gate Charge (nC)
91063_06
V
DS
, Drain-to-Source Voltage (V)
91063_08
Fig. 6 – Typical Gate Charge vs. Drain-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
4
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRF830, SiHF830
Vishay Siliconix
R
D
V
DS
V
GS
5.0
4.0
D.U.T.
R
G
+
V
–
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
3.0
2.0
Fig. 10a – Switching Time Test Circuit
1.0
0.0
V
DS
90 %
25
50
75
100
125
150
T
C
, Case
T
e
mperature (°C)
91063_09
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
10
1
0
–
0.5
0.2
0.1
P
DM
0.05
0.1
t
1
Single Pulse
(Thermal Response)
0.02
0.01
t
2
Notes:
1. Duty
Factor, D = t
1
/t
2
2. Peak
T
j
= P
DM
x Z
thJC
+ T
C
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
t
1
, Rectangular Pulse Duration (S)
91063_11
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
5
This datasheet is subject to change without notice.
IRF830, SiHF830
Vishay Siliconix
L
V
(BR)DSS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
D.U.T
I
AS
R
G
+
–
V
DD
V
DS
A
10 V
0.01
Ω
t
p
I
AS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
600
500
400
300
I
D
2.0 A
2.8 A
T
o
p
Bottom 4.5
A
200
100
V
DD
= 50 V
0
125
Starting T
, Junction
T
e
mperature (°C)
25
75
100
150
50
91063_12c
J
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
10 V
12 V
0.2 µF
0.3 µF
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
6
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRF830, SiHF830
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
7
This datasheet is subject to change without notice.
Package Information
Vishay Siliconix
TO-220AB
MILLIMETERS
MIN.
INCHES
MIN.
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
12.70
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MAX.
0.183
0.040
0.068
0.024
0.610
0.500
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
12.19
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.167
0.027
0.047
0.014
0.585
0.480
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
Ø P
b(1)
c
D
D2
E
e
e(1)
F
1
3
2
H(1)
J(1)
L
*
M
L(1)
Ø P
Q
b(1)
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Revison: 16-Jun-14
Document Number: 71195
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications.
Such statements are not binding statements
about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application.
Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time.
All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) – recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards.
Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition.
We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
