Vishay-Intertech-IRF840SPBF
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IRF840S, SiHF840S
Vishay Siliconix
Power MOSFET
FEATURES
• Surface-mount
D
D
2
PAK (TO-263)
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
Available
Available
G
• Ease of paralleling
• Simple drive requirement
• Material
categorization: for definitions of compliance
D
G
S
S
Note
N-Channel MO
S
FET
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant.
For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
V
DS
(V)
DESCRIPTION
500
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface-mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
R
DS(on)
(
Ω
)
V
GS
= 10 V
0.85
Q
g
max. (nC)
63
9.3
Q
gs
(nC)
gd
(nC)
Q
32
Configuration
Single
ORDERING INFORMATION
Package
D
2
PAK (TO-263)
SiHF840S-GE3
IRF840SPbF
D
2
PAK (TO-263)
SiHF840STRL-GE3
a
IRF840STRLPbF
a
D
2
PAK (TO-263)
SiHF840STRR-GE3
a
IRF840STRRPbF
a
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See
device orientation
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
500
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
8.0
Continuous Drain Current
V
GS
at 10 V
I
D
T
C
= 100 °C
5.1
A
Pulsed Drain Current
a
I
DM
32
Linear Derating Factor
1.0
W/°C
Linear Derating Factor (PCB mount)
e
Single Pulse Avalanche Energy
b
Avalanche Current
a
0.025
510
E
AS
I
AR
mJ
A
8.0
Repetitive Avalanche Energy
a
E
AR
13
mJ
Maximum Power Dissipation
T
C
= 25 °C
125
P
D
W
V/ns
°C
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/dt
c
T
A
= 25 °C
3.1
dV/dt
3.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
T
J
, T
stg
-55 to +150
300
For 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11)
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 14 mH, R
g
= 25
Ω
, I
AS
= 8.0 A (see fig. 12)
c. I
SD
≤
8.0 A, dI/dt
≤
100 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C
d. 1.6
mm from case
e. When
mounted on 1″ square PCB (FR-4 or G-10 material)
S21-0904-Rev. E, 30-Aug-2021
Document Number: 91071
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF840S, SiHF840S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
R
thJA
R
thJC
–
62
Maximum Junction-to-Ambient
(PCB mount)
a
–
–
40
°C/W
Maximum Junction-to-Case (Drain)
1.0
Note
a. When
mounted on 1″ square PCB (FR-4 or G-10 material)
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
500
–
–
–
V
V/°C
V
V
DS
Temperature Coefficient
–
2.0
–
0.78
Gate-Source Threshold Voltage
Gate-Source Leakage
–
–
–
–
–
–
4.0
100
25
250
0.85
–
V
GS
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 4.8 A
b
V
DS
= 50 V, I
D
= 4.8 A
b
=
20 V
nA
–
Zero Gate Voltage Drain Current
I
DSS
μA
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
–
Ω
4.9
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
1300
310
120
–
–
–
V
GS
= 0 V,
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
pF
–
63
9.3
32
–
I
D
= 8.0 A, V
DS
= 400 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
–
nC
–
14
23
49
20
–
V
DD
= 250 V, I
D
= 8.0 A,
ns
R
g
= 9.1
Ω
, R
D
= 31
Ω
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
L
D
–
4.5
–
6 mm (0.25″) from
package and center of
die contact
nH
G
L
S
R
g
–
7.5
–
–
S
Gate Input Resistance
f = 1 MHz, open drain
0.6
2.8
Ω
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
D
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
I
S
–
–
–
–
8.0
32
A
G
I
SM
p – n junction diode
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 8.0 A, V
GS
= 0 V
b
–
–
–
–
2.0
970
8.9
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
460
4.2
ns
μC
T
J
= 25 °C, I
F
= 8.0 A, dI/dt = 100 A/μs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse
width
≤
300 μs; duty cycle
≤
2 %
S21-0904-Rev. E, 30-Aug-2021
Document Number: 91071
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF840S, SiHF840S
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
15 V
10 V
I
D
= 8.0 A
V
GS
= 10 V
T
o
p
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10
1
Bottom 4.5 V
4.5 V
10
0
20 µs Pulse Width
T
C
=
25 °C
10
0
10
1
– 60 – 40 – 20
0
20 40 60 80
100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
91071_01
T
J
,
Junction
T
e
mperature (°C)
91071_04
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
2500
V
GS
V
GS
= 0
V
, f = 1
M
Hz
T
o
p
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
1
2000
C
iss
1500
1000
500
4.5 V
Bottom 4.5
V
C
oss
10
0
C
rss
20 µs Pulse Width
T
C
=
150 °C
0
10
0
10
1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
91071_02
V
DS
,
Drain-to-Source Voltage (V)
91071_05
Fig. 2 – Typical Output Characteristics, T
C
= 150 °C
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
20
I
D
= 8.0 A
150
°
C
10
1
V
DS
= 400 V
DS
= 250 V
DS
= 100 V
16
12
V
V
25
°
C
8
4
0
10
0
20 µs Pulse Width
V
DS
=
50 V
For test circuit
see figure 13
4
5
6
7
8
9
10
0
30
75
15
45
60
91071_03
V
GS
,
Gate-to-Source Voltage (V)
Fig. 3 – Typical Transfer Characteristics
Q
G
,
T
o
tal Gate Charge (nC)
91071_06
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
S21-0904-Rev. E, 30-Aug-2021
Document Number: 91071
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF840S, SiHF840S
Vishay Siliconix
8.0
6.0
4.0
2.0
0.0
10
1
150
°
C
25
°
C
V
GS
= 0 V
1.4
1.2
10
0
0.4
0.6
0.8
1.0
25
50
75
100
125
150
V
SD
, Source-to-Drain Voltage (V)
91071_07
T
C
, Case
T
e
mperature (°C)
91071_09
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 9 – Maximum Drain Current vs. Case Temperature
R
D
10
2
V
DS
Operation in this area limited
5
by R
DS(on)
V
GS
D.U.T.
10
µs
2
R
g
+
V
10
–
DD
100
µs
5
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
2
1
ms
1
10
ms
Fig. 10a – Switching Time Test Circuit
5
T
C
= 25
°
C
T
J
= 150
°
C
2
V
DS
Single Pulse
0.1
0.1
90 %
2
5
2
5
2
5
2
5
2
5
10
3
10
10
4
10
2
1
V
DS
, Drain-to-Source Voltage (V)
91071_08
Fig. 8 – Maximum Safe Operating Area
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b – Switching Time Waveforms
10
1
D = 0.5
0.2
0.1
0.1
10
-2
10
-3
P
DM
0.05
0.02
0.01
Single Pulse
(Thermal Response)
t
1
t
2
Notes:
1. Duty
Factor, D = t
1
/t
2
2. Peak
T
j
= P
DM
x Z
thJC
+ T
C
10
-5
10
-4
10
-3
10
-2
0.1
1
10
10
2
t
1
, Rectangular Pulse Duration (s)
91071_11
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0904-Rev. E, 30-Aug-2021
Document Number: 91071
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF840S, SiHF840S
Vishay Siliconix
L
V
DS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
D.U.T.
I
AS
R
g
+
–
V
DD
V
DS
10 V
0.01
Ω
t
p
I
AS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
1200
1000
800
I
D
3.6 A
5.1 A
T
o
p
Bottom 8.0
A
600
400
200
V
DD
= 50 V
0
125
Starting T
, Junction
T
e
mperature (°C)
25
75
100
150
50
91071_12c
J
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
10 V
12 V
0.2 µF
0.3 µF
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
S21-0904-Rev. E, 30-Aug-2021
Document Number: 91071
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF840S, SiHF840S
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
+
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
V
DD
–
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S21-0904-Rev. E, 30-Aug-2021
Document Number: 91071
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Dat
u
m A)
3
4
A
A
E
c2
H
L1
4
Ga
u
ge
plane
0° to
8
°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale
8
:1
A
2 x
b
2
2 x
b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b
1,
b
3
5
c1
(
b
,
b
2)
Lead tip
4
E1
Section B – B and C – C
Scale: none
V
ie
w
A – A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
–
10.67
–
0.270
0.380
0.245
–
0.420
–
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
–
–
–
–
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
D
W
G: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
1
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
