Vishay-Intertech-IRF9Z14PBF
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IRF9Z14, SiHF9Z14
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
V
DS
(V)
– 60
Available
• Repetitive Avalanche Rated
• P-Channel
R
DS(on)
(
Ω
)
V
GS
= – 10 V
0.50
RoHS*
COMPLIANT
Q
g
(Max.) (nC)
12
3.8
• 175 °C Operating Temperature
• Fast Switching
Q
Q
gs
(nC)
gd
(nC)
5.1
• Ease of Paralleling
Configuration
Single
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
S
TO-220AB
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
D
D
P-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220AB
IRF9Z14PbF
SiHF9Z14-E3
IRF9Z14
Lead (Pb)-free
SnPb
SiHF9Z14
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
– 60
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
– 6.7
– 4.7
– 27
Continuous Drain Current
V
GS
at – 10 V
I
D
T
C
= 100 °C
A
Pulsed Drain Current
a
I
DM
Linear Derating Factor
0.29
140
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
– 6.7
4.3
E
AR
mJ
W
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
T
C
= 25 °C
for 10 s
P
D
43
dV/dt
T
J
, T
stg
– 4.5
– 55 to + 175
300
d
10
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= – 25 V, starting T
J
= 25 °C, L = 3.6 mH, R
g
= 25
Ω
, I
AS
= – 6.7 A (see fig. 12).
c. I
SD
≤
– 6.7 A, dI/dt
≤
90 A/μs, V
DD
≤
V
DS
, T
J
≤
175 °C.
d. 1.6
mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
1
This datasheet is subject to change without notice.
IRF9Z14, SiHF9Z14
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R
thJA
R
thCS
R
thJC
–
0.50
–
–
°C/W
3.5
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 250 μA
– 60
–
–
–
V
V/°C
V
Reference to 25 °C, I
D
= – 1 mA
V
DS
= V
GS
, I
D
= – 250 μA
–
– 0.060
– 2.0
–
–
–
–
–
–
– 4.0
100
V
GS
=
20 V
–
–
nA
V
DS
= – 60 V, V
GS
= 0 V
– 100
– 500
0.50
–
Zero Gate Voltage Drain Current
I
DSS
μA
V
DS
= – 48 V, V
GS
= 0 V, T
J
= 150 °C
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
V
GS
= – 10 V
V
DS
= – 25 V, I
D
= – 4.0 A
b
I
D
= – 4.0 A
b
–
Ω
1.4
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
270
170
31
–
–
–
V
GS
= 0 V,
DS
= – 25 V,
f = 1.0 MHz, see fig. 5
V
pF
nC
–
12
3.8
5.1
–
I
D
= – 6.7 A, V
DS
= – 48 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= – 10 V
–
–
11
63
10
31
–
V
DD
= – 30 V, I
D
= – 6.7 A,
ns
R
g
= 24
Ω
, R
D
= 4.0
Ω
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
D
Between lead,
Internal Drain Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
I
S
–
–
–
–
– 6.7
– 27
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= – 6.7 A, V
GS
= 0 V
b
–
–
–
–
– 5.5
160
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
80
ns
μC
T
J
= 25 °C, I
F
= – 6.7 A, dI/dt = 100 A/μs
b
Q
rr
t
on
0.096
0.19
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
≤
300 μs; duty cycle
≤
2 %.
2
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRF9Z14, SiHF9Z14
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
V
GS
10
1
T
o
p
– 15 V
– 10 V
– 8.0 V
– 7.0 V
– 6.0 V
– 5.5 V
– 5.0 V
10
1
25
°
C
175
°
C
10
0
Bottom –
4.5 V
10
0
– 4.5 V
10
-1
20 µs Pulse Width
T
C
=
25 °C
20 µs Pulse Width
V
DS
= – 2
5 V
10
-1
10
-1
10
0
10
1
5
6
7
8
9
10
4
– V
DS
, Drain-to-Source Voltage (V)
91088_01
91088_03
– V
GS
,
Gate-to-Source Voltage (V)
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
3.0
V
GS
I
D
= – 6.7 A
T
o
p
– 15 V
– 10 V
– 8.0 V
– 7.0 V
– 6.0 V
– 5.5 V
– 5.0 V
V
GS
= – 10 V
10
1
2.5
2.0
1.5
1.0
0.5
0.0
Bottom – 4.5 V
10
0
– 4.5 V
20 µs Pulse Width
T
C
=
175 °C
10
-1
10
-1
10
0
– 60 – 40- 20
0
20 40 60
100 12
0
1
40 160
80 180
10
1
T
J
,
Junction
T
e
mperature (°C)
– V
DS
,
Drain-to-Source Voltage (V)
91088_04
91088_02
Fig. 2 – Typical Output Characteristics, T
C
= 175 ° C
Fig. 4 – Normalized On-Resistance vs. Temperature
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
3
This datasheet is subject to change without notice.
IRF9Z14, SiHF9Z14
Vishay Siliconix
600
V
GS
= 0
V
, f = 1
M
Hz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
1
480
360
240
120
0
175
°
C
25
°
C
C
iss
10
0
C
oss
C
rss
V
GS
= 0 V
5.0
6.0
10
-1
10
0
10
1
1.0
2.0
3.0
4.0
– V
SD
, Source-to-Drain Voltage (V)
– V
DS
,
Drain-to-Source Voltage (V)
91088_07
91088_05
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
10
2
20
I
D
= – 6.7 A
Operation in this area limited
by R
DS(on)
V
DS
= – 48 V
5
16
12
8
V
DS
= – 30 V
10
µs
2
100
µs
10
5
1
ms
4
T
C
= 25
°
C
2
T
J
= 175
°
C
Single Pulse
For test circuit
see figure 13
10
ms
1
0
2
5
2
5
1
10
10
2
0
6
15
3
9
12
– V
DS
, Drain-to-Source Voltage (V)
Fig. 8 – Maximum Safe Operating Area
Q
G
,
T
o
tal Gate Charge (nC)
91088_08
91088_06
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
4
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRF9Z14, SiHF9Z14
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
R
G
–
+
V
DD
7.5
6.0
– 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
4.5
3.0
t
d(on)
t
r
t
d(off)
t
f
V
GS
1.5
0.0
10 %
25
50
75
100
125
150
175
90 %
V
DS
T
C
, Case
T
e
mperature (°C)
91088_09
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
10
D = 0.5
1
0.2
0.1
P
DM
0.05
Single Pulse
(Thermal Response)
0.02
0.01
t
1
0.1
t
2
Notes:
1. Duty
Factor, D = t
1
/t
2
2. Peak
T
j
= P
DM
x Z
thJC
+ T
C
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
t
1
, Rectangular Pulse Duration (s)
91088_11
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
5
This datasheet is subject to change without notice.
IRF9Z14, SiHF9Z14
Vishay Siliconix
L
I
AS
V
DS
Vary t
p
to obtain
required I
AS
V
DS
D.U.T.
I
AS
R
G
–
V
+
DD
V
DD
t
p
– 10 V
0.01
Ω
t
p
V
DS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
500
400
300
200
100
I
D
– 2.7 A
– 4.7 A
T
o
p
Bottom –
6.7 A
V
DD
= – 25 V
25
0
125
75
100
150
175
50
91088_12c
Starting T
J
, Junction
T
e
mperature (°C)
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
– 10 V
12 V
0.2 µF
0.3 µF
–
Q
GS
Q
GD
V
+
DS
D.U.T.
V
G
V
GS
– 3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
6
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRF9Z14, SiHF9Z14
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
D.U.T.
+
Circuit layout con
s
ideration
s
•
Low stray inductance
•
G
round plane
•
Low leakage inductance
current tran
s
former
–
+
–
+
–
R
g
+
–
•
dV/dt controlled by R
g
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
V
DD
Note
•
Compliment N-Channel of D.U.
T
.
f
or driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
GS
= – 10 V
a
D.U.T. l
S
D
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V
D
S
waveform
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= – 5 V for logic level and – 3 V drive device
s
Fig. 14 – For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
7
This datasheet is subject to change without notice.
Package Information
Vishay Siliconix
TO-220-1
MILLIMETERS
MIN.
INCHES
MIN.
A
DIM.
E
MAX.
4.65
1.02
1.78
0.61
15.85
10.52
2.67
5.28
1.40
6.71
2.92
14.40
4.04
3.94
3.00
MAX.
0.183
0.040
0.070
0.024
0.624
0.414
0.105
0.208
0.055
0.264
0.115
0.567
0.159
0.155
0.118
F
A
b
4.24
0.69
1.14
0.36
14.33
9.96
2.41
4.88
1.14
6.10
2.41
13.36
3.33
3.53
2.54
0.167
0.027
0.045
0.014
0.564
0.392
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.100
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
•
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
A
S
E
Xi’an
Revison: 14-Dec-15
Document Number: 66542
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
