Vishay-Intertech-IRF9Z20PBF
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IRF9Z20, SiHF9Z20
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• P-channel versatility
V
DS
(V)
DS(on)
(
)
Q
g
max. (nC)
-50
• Compact plastic package
• Fast switching
R
V
GS
= -10 V
0.28
26
6.2
• Low drive current
Q
gs
(nC)
gd
(nC)
• Ease of paralleling
Q
8.6
• Excellent temperature stability
Configuration
Single
• Material
categorization: for definitions of compliance
S
DESCRIPTION
TO-220AB
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
G
The P-channel power MOSFETs are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel power MOSFETs such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
S
D
G
D
P-Channel MOSFET
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
IRF9Z20PbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-50
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
-9.7
Continuous Drain Current
V
GS
at – 10 V
I
D
T
C
= 100 °C
-6.1
A
Pulsed Drain Current
a
I
DM
-39
Linear Derating Factor
0.32
-39
W/°C
A
Inductive Current, Clamped
L = 100 μH
I
LM
I
L
Unclamped Inductive Current (Avalanche current)
Maximum Power Dissipation
-2.2
A
T
C
= 25 °C
for 10 s
P
D
40
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
c
T
J
, T
stg
-55 to +150
300
°C
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= – 25 V, starting T
J
= 25 °C, L =100 μH, R
g
= 25
c. 0.063″
(1.6 mm) from case.
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF9Z20, SiHF9Z20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R
thJA
R
thCS
R
thJC
–
1.0
–
80
–
°C/W
3.1
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
-50
–
–
V
V
-2.0
–
–
-4.0
500
-250
-1000
0.28
–
V
GS
V
DS
= max. rating, V
GS
= 0 V
V
DS
= max. rating x 0,8, V
GS
= 0 V, T
J
=125°C
V
GS
= -10 V
I
D
= -5.6 A
b
V
DS
= 2 x V
GS
, I
DS
= -5.6 A
b
=
20 V
–
–
nA
–
Zero Gate Voltage Drain Current
I
DSS
μA
–
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
–
0.20
3.5
2.3
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
–
480
320
58
–
–
V
GS
= 0 V,
DS
= -25 V,
f = 1.0 MHz, see fig. 9
V
pF
nC
–
17
26
6.2
8.6
12
86
18
38
–
I
D
= -9.7 A, V
DS
= -0.8 max.
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= -10 V
4.1
5.7
8.2
57
rating. see fig. 17
V
DD
= -25 V, I
D
= -9.7 A,
R
g
= 18
, R
D
= 2.4
, see fig. 16 (MOSFET
switching times are essentially independent
of operating temperature)
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
12
25
D
Internal Drain Inductance
L
D
Between lead,
4.5
6 mm (0.25″) from
package and center of
nH
G
Internal Source Inductance
L
S
–
7.5
–
die contact
S
Drain-Source Body Diode Characteristics
D
Continuous Source-Drain Diode Current
I
S
MOSFET symbol
–
–
–
–
-9.7
-39
showing the
A
G
integral reverse
p – n junction diode
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= – 9.7 A, V
GS
= 0 V
b
–
–
-6.3
280
0.85
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
56
110
0.34
ns
μC
T
J
= 25 °C, I
F
= – 9.7 A, dI/dt = 100 A/μs
b
Q
rr
t
on
0.17
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse
width
300 μs; duty cycle
2 %.
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF9Z20, SiHF9Z20
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
3
5
15
V
GS
= – 10, – 8 V
80 µs Pulse
T
e
st
– 7 V
Operation in this area limited
by R
DS(on)
2
12
9
10
2
5
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
10
µs
2
10
5
– 6 V
100
µs
1
ms
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
6
10
ms
2
– 5 V
– 4 V
1
DC
3
5
T
C
= 25
°
C
= 150
°
C
Single Pulse
T
J
2
0
0.1
2
5
2
5
10
2
5
10
15
20
25
0
1
10
Negative V
DS
, Drain-to-Source Voltage (V)
Fig. 1 – Typical Output Characteristics
90121_01
Negative V
DS
, Drain-to-Source Voltage (V)
Fig. 4 – Maximum Safe Operating Area
90121_04
10
2
5.0
80 µs Pulse
T
e
st
V
DS
= 2 x V
GS
80 µs Pulse
T
e
st
V
DS
<
– 50 V
5
T
J
= 25
°
C
4.0
2
10
5
T
J
= 150
°
C
3.0
2.0
1.0
2
1
5
T
J
= 150
°
C
2
2
T
J
= 25
°
C
6
0.0
0.1
0
8
4
10
0
8
20
4
12
16
Negative I
D
,
Drain Current (A)
Negative V
GS
,
Gate-to-Source Voltage (V)
90121_06
90121_02
Fig. 2 – Typical Transfer Characteristics
Fig. 5 – Typical Transconductance vs. Drain Current
15
10
2
80 µs Pulse
T
e
st
– 8 V
5
V
GS
= – 10
– 7 V
12
2
10
T
J
= 150
°
C
9
6
3
0
5
– 6 V
2
T
J
= 25
°
C
1
– 5 V
– 4 V
5
2
0.1
1
2
3
4
0
5
0
2
4
6
8
10
90121_03
Negative V
DS
,
Drain-to-Source Voltage (V)
Negative V
SD
, Source-to-Drain Voltage (V)
90121_07
Fig. 3 – Typical Saturation Characteristics
Fig. 6 – Typical Source-Drain Diode Forward Voltage
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF9Z20, SiHF9Z20
Vishay Siliconix
1.25
1.15
1.05
0.95
20
16
I
D
= 1 mA
I
D
= – 9.7 A
V
SD
= – 40 V
12
8
0.85
0.75
4
For test circuit
see figure 17
0
– 60 – 40 – 20
0
20 40 60 80
100
140 160
120
0
16
40
8
24
32
T
J
, Junction
T
e
mperature (°C)
90121_08
Q
G
,
T
o
tal Gate Charge (nC)
90121_11
Fig. 7 – Breakdown Voltage vs. Temperature
Fig. 10 – Typical Gate Charge vs. Gate-to-Source Voltage
3.0
2.0
I
D
= – 9.7 A
V
GS
= – 10 V
80 µs Pulse
T
e
st
2.4
1.6
1.2
1.8
1.2
0.6
0.0
V
GS
= – 10 V
0.8
0.4
0.0
V
GS
= – 20 V
– 60 – 40 – 20
0
20 40 60 80
100 120 140 160
0
8
16
24
32
40
T
J
, Junction
T
e
mperature (°C)
90121_09
Negative I
D
, Drain Current (A)
90121_12
Fig. 8 – Normalized On-Resistance vs. Temperature
Fig. 11 – Typical On-Resistance vs. Drain Current
1000
10
V
GS
= 0
V
, f = 1
M
Hz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gs
C
gd
/ (C
gs
+ C
gd
8
800
)
IRF9Z20, SiHF9Z20
≈
C
ds
+ C
gd
6
600
400
200
IRF9Z22, SiHF9Z22
C
iss
4
2
0
C
oss
C
rss
0
2
5
2
5
10
2
25
50
75
100
125
150
1
10
Negative V
DS
,
Drain-to-Source Voltage (V)
T
C
, Case
T
e
mperature (°C)
90121_10
90121_13
Fig. 9 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 12 – Maximum Drain Current vs. Case Temperature
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF9Z20, SiHF9Z20
Vishay Siliconix
Fig. 13a – Unclamped Inductive Test Circuit
Fig. 13b – Unclamped Inductive Load Test Waveforms
10
D = 0.5
1
0.2
0.1
P
DM
0.05
0.1 0.02
t
1
Single Pulse
0.01
t
2
(Thermal Response)
Notes:
1. Duty
Factor, D = t
1
/t
2
2. Peak
T
j
= P
DM
x Z
thJC
+ T
C
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
t
1
, Rectangular Pulse Duration (s)
90121_05
Fig. 14 – Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Fig. 15 – Switching Time Test Circuit
Fig. 16 – Gate Charge Test Circuit
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRF9Z20, SiHF9Z20
Vishay Siliconix
10
12
10
4
10
3
1
14 V
16 V
60 % UCL
0.1
10
10
10
8
10
6
10
4
10
2
90 % UCL
99 % UCL
20 FIT’s
10
2
10
-2
18 V
20 V
10
-3
10
-4
10
1
130
130
50
70
90
110
150
50
70
90
110
150
T
e
mperature (°C)
T
e
mperature (°C)
90121_18
90121_19
Fig. 17 – Typical Time to Accumulated 1 % Gate Failure
Fig. 18 – Typical High Temperature Reverse Bias (HTRB)
Failure Rate
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S16-0015-Rev. C, 18-Jan-16
Document Number: 90121
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-220-1
MILLIMETERS
MIN.
INCHES
MIN.
A
DIM.
E
MAX.
4.65
1.02
1.78
0.61
15.85
10.52
2.67
5.28
1.40
6.71
2.92
14.40
4.04
3.94
3.00
MAX.
0.183
0.040
0.070
0.024
0.624
0.414
0.105
0.208
0.055
0.264
0.115
0.567
0.159
0.155
0.118
F
A
b
4.24
0.69
1.14
0.36
14.33
9.96
2.41
4.88
1.14
6.10
2.41
13.36
3.33
3.53
2.54
0.167
0.027
0.045
0.014
0.564
0.392
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.100
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
•
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
A
S
E
Xi’an
Revison: 14-Dec-15
Document Number: 66542
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
