Vishay-Intertech-IRFB17N50LPBF
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IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Power MOSFET
FEATURES
• Low Gate Charge Q
g
results in Simple Drive
Requirement
PRODUCT SUMMARY
V
DS
(V)
500
Available
R
DS(on)
(
)
V
GS
= 10 V
0.28
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
RoHS*
Q
g
(Max.) (nC)
130
33
COMPLIANT
Q
Q
gs
(nC)
gd
(nC)
• Fully Characterized Capacitance and Avalanche Voltage
and Current
59
Configuration
Single
• Low t
rr
and Soft Diode Recovery
D
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• ZVS and High Frequency Circuit
• PWM Inverters
G
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220AB
IRFB17N50LPbF
SiHFB17N50L-E3
IRFB17N50L
Lead (Pb)-free
SnPb
SiHFB17N50L
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
500
V
V
GS
30
T
C
= 25 °C
16
Continuous Drain Current
V
GS
at 10 V
I
D
T
C
= 100 °C
11
A
Pulsed Drain Current
a
I
DM
64
Linear Derating Factor
1.8
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
390
16
E
AR
22
mJ
W
Maximum Power Dissipation
T
C
= 25 °C
P
D
220
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
13
– 55 to + 150
300
d
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting
T
J
= 25 °C, L = 3.0 mH, R
g
= 25
, I
AS
= 16 A (see fig. 12).
c. I
SD
16 A, dI/dt
347 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6
mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
1
This datasheet is subject to change without notice.
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R
thJA
–
0.50
–
R
thCS
–
°C/W
R
thJC
0.56
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
500
–
–
–
V
V/°C
V
V
DS
Temperature Coefficient
–
3.0
–
0.6
Gate-Source Threshold Voltage
Gate-Source Leakage
–
5.0
100
50
2.0
0.32
–
V
GS
V
DS
= 500 V, V
GS
= 0 V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 9.9 A
b
V
DS
= 50 V, I
D
= 9.9 A
b
=
30 V
–
nA
μA
mA
–
–
Zero Gate Voltage Drain Current
I
DSS
V
–
–
0.28
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
–
11
S
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
–
–
–
–
–
–
2760
325
37
3690
84
159
–
–
–
V
GS
= 0 V,
DS
= 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
V
Reverse Transfer Capacitance
–
pF
V
GS
= 0 V
GS
= 0 V
V
GS
= 0 V
V
DS
= 1.0 V , f = 1.0 MHz
–
Output Capacitance
C
oss
V
V
DS
= 400 V , f = 1.0 MHz
V
DS
= 0 V to 400 V
c
–
Effective Output Capacitance
Total Gate Charge
C
oss
eff.
–
Q
g
130
33
59
–
I
D
= 16 A, V
DS
= 400 V,
see fig. 6 and 13
b
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
–
nC
ns
–
Turn-On Delay Time
Rise Time
21
51
50
28
–
V
DD
= 250 V, I
D
= 16 A,
R
g
= 7.5
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p – n junction diode
Continuous Source-Drain Diode Current
I
S
–
–
–
–
16
64
D
A
G
Pulsed Diode Forward Current
a
Body Diode Voltage
I
SM
V
SD
t
rr
S
T
J
= 25 °C, I
S
= 16 A, V
GS
= 0 V
b
T
J
= 25 °C
–
–
–
–
–
–
–
1.5
250
330
710
1210
11
V
170
220
470
810
7.3
Body Diode Reverse Recovery Time
ns
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 16 A, dI/dt = 100 A/μs
b
Body Diode Reverse Recovery Charge
Q
rr
nC
A
Reverse Recovery Current
Forward Turn-On Time
I
RRM
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
300 μs; duty cycle
2 %.
2
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
100
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
T
= 150 °C
J
T
o
p
10
10
Bottom
T
= 25 °C
J
1
5.0 V
1
0.1
20
μ
s PULSE WIDTH
V
= 50 V
T
= 25 °C
DS
J
20
μ
s PULSE WIDTH
0.01
0.1
4.0
5.0
9.0
6.0
7.0
8.0
10.0
0.1
10
1
, Drain-to-Source Voltage (V)
100
V
V
, Gate-to-Source Voltage (V)
DS
GS
Fig. 1 – Typical Output Characteristics
Fig. 3 – Typical Transfer Characteristics
3.0
2.5
100
10
I
= 16 A
D
VGS
T
o
p
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
2.0
1.5
Bottom
5.0 V
1.0
0.5
1
20
μ
s PULSE WIDTH
T
= 125 °C
J
V
= 10 V
GS
0.1
0.0
– 40
80 100
120 140
– 60
40 60
– 20
0
20
160
0.1
1
10
100
T ,
Junction
T
e
mperature
V
, Drain-to-Source Voltage (V)
J
DS
Fig. 2 – Typical Output Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
3
This datasheet is subject to change without notice.
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
100
10
1
1 000 000
V
= 0
V
,
f = 1 MHz
Shorted
GS
iss
rss
oss
C
C
C
= C
+ C
, C
gs gd
ds
T
= 150 °C
J
= C
= C
+ C
gd
ds
gd
10 000
1000
100
C
iss
T
= 25 °C
J
C
oss
C
rss
V
= 0 V
GS
10
0.1
0.2
1.3
1.6
0.9
0.6
1
1000
100
10
V
, Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
1000
20
I
= 16 A
D
OPER
A
T
ING IN THIS AREA LIMITED
V
V
V
= 400 V
= 250 V
= 100 V
BY R
DS
DS
DS
DS(on)
16
100
10
μ
s
12
8
10
100
μ
s
1 ms
1
10 ms
4
T
T
= 25 °C
= 150 °C
C
J
Single Pulse
0.1
10
0
100
1000
10000
120
150
0
30
60
90
Q
,
T
o
tal Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig. 8 – Maximum Safe Operating Area
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
4
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
R
D
V
DS
20
16
12
8
V
GS
D.U.T.
R
G
+
V
–
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
V
DS
4
90 %
0
50
75
, Case
T
e
mperature (°C)
125
150
25
100
T
10 %
V
GS
C
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
SINGLE PULSE
0.01
P
(THERMAL RESPONSE)
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t
/ t
1
2
2. Peak T
= P
J
x Z
+ T
DM
thJC C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
5
This datasheet is subject to change without notice.
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
V
DS
15 V
t
p
Driver
L
V
DS
D.U.T
R
G
+
–
V
A
DD
I
AS
A
20 V
I
AS
Fig. 12b – Unclamped Inductive Waveforms
0.01
Ω
t
p
Fig. 12a – Unclamped Inductive Test Circuit
800
I
D
7 A
TOP
10 A
16 A
BOTTOM
640
480
320
160
0
25
50
75
100
125
150
Starting T
, Junction
T
e
mperature (°C)
J
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
V
GS
12 V
0.2 µF
0.3 µF
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
6
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
7
This datasheet is subject to change without notice.
Package Information
Vishay Siliconix
TO-220-1
MILLIMETERS
MIN.
INCHES
MIN.
A
DIM.
E
MAX.
4.65
1.02
1.78
0.61
15.85
10.52
2.67
5.28
1.40
6.71
2.92
14.40
4.04
3.94
3.00
MAX.
0.183
0.040
0.070
0.024
0.624
0.414
0.105
0.208
0.055
0.264
0.115
0.567
0.159
0.155
0.118
F
A
b
4.24
0.69
1.14
0.36
14.33
9.96
2.41
4.88
1.14
6.10
2.41
13.36
3.33
3.53
2.54
0.167
0.027
0.045
0.014
0.564
0.392
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.100
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
•
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
A
S
E
Xi’an
Revison: 14-Dec-15
Document Number: 66542
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
