Vishay-Intertech-IRFD024PBF

IRFD024, SiHFD024  

Vishay Siliconix  

Power MOSFET  

FEATURES  

• Dynamic dV/dt Rating  

PRODUCT SUMMARY  

V

DS

(V)  

60  

Available  

• For Automatic Insertion  

R

V

GS

= 10 V  

0.10  

RoHS*  

• End Stackable  

Q

g

(Max.) (nC)  

25  

5.8  

COMPLIANT  

• 175 °C Operating Temperature  

• Fast Switching  

Q

Q

11  

Configuration  

Single  

• Ease of Paralleling  

• Simple Drive Requirements  

• Compliant to RoHS Directive 2002/95/EC  

D

HVMDIP  

DESCRIPTION  

Third generation Power MOSFETs from Vishay provide the  

designer with the best combination of fast switching,  

ruggedized device design, low on-resistance and  

cost-effectiveness.  

The 4 pin DIP package is a low cost machine-insertable  

case style which can be stacked in multiple combinations on  

standard 0.1″ pin centers. The dual drain serves as a thermal  

link to the mounting surface for power dissipation levels up  

to 1 W.  

G

S

G

D

S

N-Channel MOSFET  

ORDERING INFORMATION  

Package  

HVMDIP  

IRFD024PbF  

SiHFD024-E3  

IRFD024  

Lead (Pb)-free  

SnPb  

SiHFD024  

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25 °C, unless otherwise noted)  

PARAMETER  

SYMBOL  

LIMIT  

UNIT  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

60  

V

V

GS  

20  

2.5  

T

A

= 25 °C  

T

A

= 100 °C  

Continuous Drain Current  

V

GS

at 10 V  

I

D  

1.8  

A

Pulsed Drain Current

a  

I

DM  

20  

Linear Derating Factor  

0.0083  

91  

W/°C  

mJ  

Single Pulse Avalanche Energy

b  

E

AS  

P

D  

Maximum Power Dissipation  

T

A

= 25 °C  

1.3  

W

Peak Diode Recovery dV/dt

c  

dV/dt  

T

J

, T

stg  

4.5  

V/ns  

Operating Junction and Storage Temperature Range  

Soldering Recommendations (Peak Temperature)  

– 55 to + 175  

300

d  

°C  

for 10 s  

Notes  

a. Repetitive

 

rating; pulse width limited by maximum junction temperature (see fig. 11).  

b. V

DD

= 25 V, starting T

J

= 25 °C, L = 16 mH, R

g

= 25



, I

AS

= 2.5 A (see fig. 12).  

c. I

SD



17 A, dI/dt



140 A/μs, V

DD



V

DS

, T

J



175 °C.  

d. 1.6

 

mm from case.  

* Pb containing terminations are not RoHS compliant, exemptions may apply  

Document Number: 91126  

S10-2466-Rev. C, 25-Oct-10  

1

IRFD024, SiHFD024  

Vishay Siliconix  

THERMAL RESISTANCE RATINGS  

PARAMETER  

SYMBOL  

TYP.  

MAX.  

UNIT  

Maximum Junction-to-Ambient  

R

thJA  

–

120  

°C/W  

SPECIFICATIONS

(T

J

= 25 °C, unless otherwise noted)  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

MIN.  

TYP.  

MAX. UNIT  

Static  

Drain-Source Breakdown Voltage  

V

DS  



V

DS

/T

J  

V

GS(th)  

I

GSS  

V

GS

= 0 V, I

D

= 250 μA  

Reference to 25 °C, I

D

= 1 mA  

V

DS

= V

GS

, I

D

= 250 μA  

60  

–

–

–

V

V/°C  

V

V

DS

Temperature Coefficient  

–

0.061  

Gate-Source Threshold Voltage  

Gate-Source Leakage  

2.0  

–

–

–

–

–

–

4.0  

100  

25  

250  

0.10  

–

V

GS  

V

DS

= 60 V, V

GS

= 0 V  

V

GS

= 10 V  

I

D

= 1.5 A

b  

V

DS

= 25 V, I

D

= 1.5 A

b  

=

20 V  

–

nA  

–

Zero Gate Voltage Drain Current  

I

DSS  

μA  

V

–

–

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic  

R

DS(on)  

g

fs  



0.90  

S

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

C

iss  

C

oss  

C

rss  

Q

g  

–

–

–

–

–

–

–

–

–

–

640  

360  

79  

–

–

–

V

GS

= 0 V,  

f = 1.0 MHz, see fig. 5  

V

pF  

nC  

–

25  

5.8  

11  

–

I

D

= 17 A, V

DS

= 48 V,  

see fig. 6 and 13

b  

Q

gs  

Q

gd  

t

d(on)  

t

r  

V

–

–

13  

58  

25  

42  

–

V

ns  

Turn-Off Delay Time  

Fall Time  

t

d(off)  

t

f  

R

g

= 18



, R

D

= 1.7



, see fig. 10

b  

–

–

D

Between lead,  

Internal Drain Inductance  

L

D  

L

S  

–

–

4.0  

6.0  

–

–

6 mm (0.25″) from  

package and center of  

die contact  

nH  

G

Internal Source Inductance  

S

Drain-Source Body Diode Characteristics  

Continuous Source-Drain Diode Current  

MOSFET symbol  

showing the  

integral reverse  

p – n junction diode  

D

I

S  

–

–

–

–

2.5  

20  

A

G

Pulsed Diode Forward Current

a  

I

SM  

S

Body Diode Voltage  

V

SD  

t

rr  

T

J

= 25 °C, I

S

= 2.5 A, V

GS

= 0 V

b  

T

J

= 25 °C, I

F

= 17 A, dI/dt = 100 A/μs

b  

–

–

–

–

1.5  

180  

0.64  

V

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

Forward Turn-On Time  

80  

ns  

μC  

Q

rr  

t

on  

0.29  

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)  

Notes  

a. Repetitive

 

rating; pulse width limited by maximum junction temperature (see fig. 11).  

b. Pulse

 

width



300 μs; duty cycle



2 %.  

2

Document Number: 91126  

S10-2466-Rev. C, 25-Oct-10  

IRFD024, SiHFD024  

Vishay Siliconix  

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)  

T =

 

25 °C  

A

Fig. 1 – Typical Output Characteristics, T

A

= 25 °C  

Fig. 3 – Typical Transfer Characteristics  

T =

 

175 °C  

A

Fig. 2 – Typical Output Characteristics, T

A

= 175 °C  

Fig. 4 – Normalized On-Resistance vs. Temperature  

Document Number: 91126  

S10-2466-Rev. C, 25-Oct-10  

3

IRFD024, SiHFD024  

Vishay Siliconix  

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage  

Fig. 7 – Typical Source-Drain Diode Forward Voltage  

T

T

= 25 °C  

= 175 °C  

A

J

S

IN

G

LE PUL

S

E  

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage  

Fig. 8 – Maximum Safe Operating Area  

4

Document Number: 91126  

S10-2466-Rev. C, 25-Oct-10  

IRFD024, SiHFD024  

Vishay Siliconix  

R

D  

V

DS  

V

GS  

D.U.T.  

R

g  

+

V

–

DD  

10 V  

Pulse width

≤

1 µs  

Duty factor

≤

0.1 %  

Fig. 10a – Switching Time Test Circuit  

V

DS  

90 %  

10 %  

V

GS  

T ,

 

Ambient

T

e

mperature (°C)  

A

t

d(on)

t

r  

t

d(off)

t

f  

Fig. 10b – Switching Time Waveforms  

Fig. 9 – Maximum Drain Current vs. Ambient Temperature  

t ,

 

Rectangular Pul

s

e Duration (

s

)  

1

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  

Document Number: 91126  

S10-2466-Rev. C, 25-Oct-10  

5

IRFD024, SiHFD024  

Vishay Siliconix  

L

V

DS  

V

DS  

Vary t

p

to obtain  

required I

AS  

t

p  

V

DD  

D.U.T  

I

AS  

R

g  

+

–

V

DD  

V

DS  

10 V  

0.01

W  

t

p  

I

AS  

Fig. 12a – Unclamped Inductive Test Circuit  

Fig. 12b – Unclamped Inductive Waveforms  

Fig. 12c – Maximum Avalanche Energy vs. Drain Current  

Current regulator  

Same type as D.U.T.  

50 k

Ω  

Q

G  

V

GS  

12 V  

0.2 µF  

0.3 µF  

Q

GS  

Q

GD  

+

–

V

DS  

D.U.T.  

V

G  

V

GS  

3 mA  

Charge  

I

G  

I

D  

Current sampling resistors  

Fig. 13a – Basic Gate Charge Waveform  

Fig. 13b – Gate Charge Test Circuit  

6

Document Number: 91126  

S10-2466-Rev. C, 25-Oct-10  

IRFD024, SiHFD024  

Vishay Siliconix  

Peak Dio

d

e Recovery

d

V/

d

t Test Circuit  

+

Circuit layout con

s

ideration

s  

•

Low

s

tray inductance  

•

G

round plane  

D.U.T.  

•

Low leakage inductance  

current tran

s

former  

–

+

–

–

+

R

g  

•

dV/dt controlled by R

g  

+

•

Driver

s

ame type a

s

D.U.T.  

•

I

S

D

controlled by duty factor “D”  

•

D.U.T. – device under te

s

t  

V

DD  

–

Driver gate drive  

P.W.  

P.W.  

D =  

Period  

Period  

V

D.U.T. l

S

D

waveform  

D.U.T. V

D

S

waveform  

Rever

s

e  

recovery  

current  

Body diode forward  

current  

dI/dt  

Diode recovery  

dV/dt  

V

DD  

Re-applied  

voltage  

Body diode forward drop  

Inductor current  

I

S

D  

Ripple

≤

5 %  

Note  

a. V

GS

= 5 V for logic level device

s  

Fig. 14 – For N-Channel  

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  

reliability data, see

.  

Document Number: 91126  

S10-2466-Rev. C, 25-Oct-10  

7

Package Information  

Vishay Siliconix  

HVM DIP

(High voltage)  

0.248 [6.29]  

0.240 [6.10]  

0.043 [1.09]  

0.035 [0.89]  

0.197 [5.00]  

0.189 [4.80]  

0.133 [3.37]  

0.125 [3.18]  

0.180 [4.57]  

0.160 [4.06]  

0.094 [2.38]  

0.086 [2.18]  

A

L

0.160 [4.06]  

0.140 [3.56]  

0° to 15°  

2 x  

0.017 [0.43]  

0.013 [0.33]  

0.045 [1.14]  

0.035 [0.89]  

2 x  

0.024 [0.60]  

0.020 [0.51]  

4 x  

E min.  

E max.  

0.100 [2.54] typ.  

INCHES  

MILLIMETERS  

DIM.  

MIN.  

MAX.  

MIN.  

MAX.  

8.38  

A

E

L

0.310  

0.300  

0.270  

0.330  

0.425  

0.290  

7.87  

7.62  

6.86  

10.79  

7.36  

ECN: X10-0386-Rev. B, 06-Sep-10  

DWG: 5974  

Note  

1. Package

 

length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.  

Document Number: 91361  

Revision: 06-Sep-10  

1

Legal Disclaimer Notice  

Vishay  

Disclaimer  



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  

disclosure relating to any product.  

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  

the continuing production of any product.

 

To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  

purpose, non-infringement and merchantability.  

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  

typical requirements that are often placed on Vishay products in generic applications.

 

Such statements are not binding  

statements about the suitability of products for a particular application.

 

It is the customer’s responsibility to validate that a  

particular product with the properties described in the product specification is suitable for use in a particular application.  

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  

time. All

 

operating parameters, including typical parameters, must be validated for each customer application by the customer’s  

technical experts.

 

Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  

including but not limited to the warranty expressed therein.  

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  

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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  

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Product names and markings noted herein may be trademarks of their respective owners.  

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  

Revision: 08-Feb-17  

Document Number: 91000  

1