Vishay-Intertech-IRFD9110PBF

IRFD9110, SiHFD9110  

Vishay Siliconix  

Power MOSFET  

FEATURES  

• Dynamic dV/dt Rating  

PRODUCT SUMMARY  

V

DS

(V)  

– 100  

Available  

• Repetitive Avalanche Rated  

R

DS(on)

(



)  

V

GS

= – 10 V  

1.2  

RoHS*  

• For Automatic Insertion  

• End Stackable  

COMPLIANT  

Q

g

(Max.) (nC)  

Q

gs

(nC)  

8.7  

2.2  

4.1  

• P-Channel  

Q

• 175 °C Operating Temperature  

• Fast Switching  

Configuration  

Single  

S

• Compliant to RoHS Directive 2002/95/EC  

HVMDIP  

DESCRIPTION  

Third generation Power MOSFETs from Vishay provide the  

designer with the best combination of fast switching,  

ruggedized device design, low on-resistance and  

cost-effectiveness.  

G

S

G

The 4 pin DIP package is a low cost machine-insertable  

case style which can be stacked in multiple combinations on  

standard 0.1″ pin centers. The dual drain serves as a thermal  

link to the mounting surface for power dissipation levels up  

to 1 W.  

D

D

P-Channel MOSFET  

ORDERING INFORMATION  

Package  

HVMDIP  

IRFD9110PbF  

SiHFD9110-E3  

IRFD9110  

Lead (Pb)-free  

SnPb  

SiHFD9110  

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25 °C, unless otherwise noted)  

PARAMETER  

SYMBOL  

LIMIT  

– 100  

20  

UNIT  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

V

GS  

T

A

= 25 °C  

T

A

= 100 °C  

– 0.70  

– 0.49  

– 5.6  

Continuous Drain Current  

V

GS

at – 10 V  

I

D  

A

Pulsed Drain Current

a  

I

DM  

Linear Derating Factor  

0.0083  

140  

W/°C  

mJ  

A

Single Pulse Avalanche Energy

b  

Repetitive Avalanche Current

a  

Repetitive Avalanche Energy

a  

E

AS  

I

AR  

– 0.7  

E

AR  

0.13  

mJ  

W

Maximum Power Dissipation  

T

A

= 25 °C  

P

D  

1.3  

Peak Diode Recovery dV/dt

c  

dV/dt  

T

J

, T

stg  

– 5.5  

V/ns  

Operating Junction and Storage Temperature Range  

Soldering Recommendations (Peak Temperature)  

– 55 to + 175  

300

d  

°C  

for 10 s  

Notes  

a. Repetitive

 

rating; pulse width limited by maximum junction temperature (see fig. 11).  

b. V

DD

= – 25 V, starting T

J

= 25 °C, L = 52 mH, R

g

= 25



, I

AS

= – 2.0 A (see fig. 12).  

c. I

SD



– 4.0 A, dI/dt



75 A/μs, V

DD



V

DS

, T

J



175 °C.  

d. 1.6

 

mm from case.  

* Pb containing terminations are not RoHS compliant, exemptions may apply  

Document Number: 91138  

S10-2464-Rev. C, 25-Oct-10  

1

IRFD9110, SiHFD9110  

Vishay Siliconix  

THERMAL RESISTANCE RATINGS  

PARAMETER  

SYMBOL  

TYP.  

MAX.  

UNIT  

Maximum Junction-to-Ambient  

R

thJA  

–

120  

°C/W  

SPECIFICATIONS

(T

J

= 25 °C, unless otherwise noted)  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

MIN.  

TYP.  

MAX. UNIT  

Static  

Drain-Source Breakdown Voltage  

V

DS

Temperature Coefficient  

Gate-Source Threshold Voltage  

Gate-Source Leakage  

V

DS  

V

GS

= 0 V, I

D

= – 250 μA  

– 100  

–

–

– 0.091  

–

–

–

V

V/°C  

V



V

DS

/T

J  

V

GS(th)  

Reference to 25 °C, I

D

= – 1 mA  

V

DS

= V

GS

, I

D

= – 250 μA  

– 2.0  

– 4.0  

I

GSS  

V

GS  

=

20 V  

–

–

–

–

–

–

100  

– 100  

– 500  

1.2  

nA  

V

DS

= – 100 V, V

GS

= 0 V  

–

Zero Gate Voltage Drain Current  

I

DSS  

μA  

V

–

–

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic  

R

DS(on)  

g

fs  

V

GS

= – 10 V  

I

D

= – 0.42 A

b  



V

DS

= – 50 V, I

D

= – 0.42 A  

0.60  

–

S

V

GS

= 0 V,  

V

DS

= – 25 V,  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

–

–

–

–

200  

94  

18  

–

–

–

Output Capacitance  

pF  

nC  

Reverse Transfer Capacitance  

Total Gate Charge  

–

f = 1.0 MHz, see fig. 5  

8.7  

I

D

= – 4.0 A, V

DS

= – 80 V  

see fig. 6 and 13

b  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

V

GS

= – 10 V  

–

–

–

–

2.2  

4.1  

Turn-On Delay Time  

Rise Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

10  

27  

15  

17  

–

–

–

–

V

ns  

R

g

= 24



, R

D

= 11

  

Turn-Off Delay Time  

Fall Time  

see fig. 10

b  

D

Between lead,  

Internal Drain Inductance  

Internal Source Inductance  

L

D  

L

S  

–

–

4.0  

6.0  

–

–

6 mm (0.25″) from  

package and center of  

die contact  

nH  

G

S

Drain-Source Body Diode Characteristics  

MOSFET symbol  

showing the  

integral reverse  

p – n junction diode  

D

Continuous Source-Drain Diode Current  

I

S  

–

–

–

–

– 0.70  

– 5.6  

A

G

Pulsed Diode Forward Current

a  

I

SM  

S

Body Diode Voltage  

V

SD  

t

rr  

T

J

= 25 °C, I

S

= – 0.7 A, V

GS

= 0 V

b  

–

–

–

–

– 5.5  

160  

V

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

82  

ns  

μC  

T

J

= 25 °C, I

F

= – 4.0 A, dI/dt = 100 A/μs

b  

Q

rr  

0.15  

0.30  

Notes  

a. Repetitive

 

rating; pulse width limited by maximum junction temperature (see fig. 11).  

b. Pulse

 

width



300 μs; duty cycle



2 %.  

2

Document Number: 91138  

S10-2464-Rev. C, 25-Oct-10  

IRFD9110, SiHFD9110  

Vishay Siliconix  

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)  

T

A

= 25 °C  

Fig. 1 – Typical Output Characteristics, T

A

= 25 °C  

Fig. 3 – Typical Transfer Characteristics  

T

A

= 175 °C  

Fig. 2 – Typical Output Characteristics, T

A

= 175 °C  

Fig. 4 – Normalized On-Resistance vs. Temperature  

Document Number: 91138  

S10-2464-Rev. C, 25-Oct-10  

3

IRFD9110, SiHFD9110  

Vishay Siliconix  

Fig. 7 – Typical Source-Drain Diode Forward Voltage  

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage  

T

T

= 25 °C  

= 175 °C  

A

J

S

IN

G

LE PUL

S

E  

Fig. 8 – Maximum Safe Operating Area  

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage  

4

Document Number: 91138  

S10-2464-Rev. C, 25-Oct-10  

IRFD9110, SiHFD9110  

Vishay Siliconix  

R

D  

V

DS  

V

GS  

D.U.T.  

R

g  

–

+

V

DD  

– 10 V  

Pulse width

≤

1 µs  

Duty factor

≤

0.1 %  

Fig. 10a – Switching Time Test Circuit  

t

d(on)

t

r  

t

d(off)

t

f  

V

GS  

10 %  

T ,

 

Ambient

T

e

mperature (°C)  

A

90 %  

V

DS  

Fig. 9 – Maximum Drain Current vs. Ambient Temperature  

Fig. 10b – Switching Time Waveforms  

t ,

 

Rectangular Pul

s

e Duration (

s

)  

1

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  

Document Number: 91138  

S10-2464-Rev. C, 25-Oct-10  

5

IRFD9110, SiHFD9110  

Vishay Siliconix  

I

AS  

L

V

DS  

Vary t

p

to obtain  

required I

AS  

V

DS  

D.U.T  

I

AS  

R

g  

–

V

+

DD  

V

DD  

– 10 V  

t

p  

0.01

W  

t

p  

V

DS  

Fig. 12b – Unclamped Inductive Waveforms  

Fig. 12a – Unclamped Inductive Test Circuit  

Fig. 12c – Maximum Avalanche Energy vs. Drain Current  

Current regulator  

Same type as D.U.T.  

50 k

Ω  

Q

G  

– 10 V  

12 V  

0.2 µF  

0.3 µF  

–

Q

GS  

Q

GD  

V

+

DS  

D.U.T.  

V

G  

V

GS  

– 3 mA  

Charge  

I

G  

I

D  

Current sampling resistors  

Fig. 13a – Basic Gate Charge Waveform  

Fig. 13b – Gate Charge Test Circuit  

6

Document Number: 91138  

S10-2464-Rev. C, 25-Oct-10  

IRFD9110, SiHFD9110  

Vishay Siliconix  

Peak Dio

d

e Recovery

d

V/

d

t Test Circuit  

D.U.T.  

+

Circuit layout con

s

ideration

s  

•

Low stray inductance  

•

G

round plane  

•

Low leakage inductance  

current tran

s

former  

–

+

–

+

–

R

g  

+

–

•

dV/dt controlled by R

g  

•

I

S

D

controlled by duty factor “D”  

•

D.U.T. – device under te

s

t  

V

DD  

Note  

•

Compliment N-Channel of D.U.

T

.

f

or driver  

Driver gate drive  

P.W.  

Period  

Period  

D =  

P.W.  

V

D.U.T. l

S

D

waveform  

Rever

s

e  

recovery  

current  

Body diode forward  

current  

dI/dt  

D.U.T. V

D

S

waveform  

Diode recovery  

dV/dt  

V

DD  

Re-applied  

voltage  

Body diode forward drop  

Inductor current  

I

S

D  

Ripple

≤

5 %  

Note  

a. V

GS

= – 5 V for logic level and – 3 V drive device

s  

Fig. 14 – For P-Channel  

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  

reliability data, see

.  

Document Number: 91138  

S10-2464-Rev. C, 25-Oct-10  

7

Package Information  

Vishay Siliconix  

HVM DIP

(High voltage)  

0.248 [6.29]  

0.240 [6.10]  

0.043 [1.09]  

0.035 [0.89]  

0.197 [5.00]  

0.189 [4.80]  

0.133 [3.37]  

0.125 [3.18]  

0.180 [4.57]  

0.160 [4.06]  

0.094 [2.38]  

0.086 [2.18]  

A

L

0.160 [4.06]  

0.140 [3.56]  

0° to 15°  

2 x  

0.017 [0.43]  

0.013 [0.33]  

0.045 [1.14]  

0.035 [0.89]  

2 x  

0.024 [0.60]  

0.020 [0.51]  

4 x  

E min.  

E max.  

0.100 [2.54] typ.  

INCHES  

MILLIMETERS  

DIM.  

MIN.  

MAX.  

MIN.  

MAX.  

8.38  

A

E

L

0.310  

0.300  

0.270  

0.330  

0.425  

0.290  

7.87  

7.62  

6.86  

10.79  

7.36  

ECN: X10-0386-Rev. B, 06-Sep-10  

DWG: 5974  

Note  

1. Package

 

length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.  

Document Number: 91361  

Revision: 06-Sep-10  

1

Legal Disclaimer Notice  

Vishay  

Disclaimer  

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  

disclosure relating to any product.  

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  

the continuing production of any product.

 

To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  

purpose, non-infringement and merchantability.  

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  

requirements that are often placed on Vishay products in generic applications.

 

Such statements are not binding statements  

about the suitability of products for a particular application.

 

It is the customer’s responsibility to validate that a particular  

product with the properties described in the product specification is suitable for use in a particular application.

 

Parameters  

provided in datasheets and/or specifications may vary in different applications and performance may vary over time.

 

All  

operating parameters, including typical parameters, must be validated for each customer application by the customer’s  

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  

including but not limited to the warranty expressed therein.  

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

 

Please  

contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  

any conduct of Vishay.

 

Product names and markings noted herein may be trademarks of their respective owners.  

Material Category Policy  

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  

(EEE) – recast, unless otherwise specified as non-compliant.  

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  

requirements as per JEDEC JS709A standards.

 

Please note that some Vishay documentation may still make reference  

to the IEC 61249-2-21 definition.

 

We confirm that all the products identified as being compliant to IEC 61249-2-21  

conform to JEDEC JS709A standards.  

Revision: 02-Oct-12  

Document Number: 91000  

1