Vishay-Intertech-IRFI9520GPBF

IRFI9520G, SiHFI9520G  

Vishay Siliconix  

Power MOSFET  

FEATURES  

PRODUCT SUMMARY  

V

DS

(V)  

• Isolated

 

Package  

– 100  

• High Voltage Isolation = 2.5 kV

RMS

(t = 60 s;  

f = 60 Hz)  

A

v

aila

b

le  

R

V

GS

= – 10 V  

0.60  

RoHS*  

Q

g

(Max.) (nC)  

18  

3.0  

9.0  

• Sink

 

to Lead Creepage Distance = 4.8 mm  

• P-Channel  

COMPLIANT  

Q

Q

• 175

 

°C Operating Temperature  

• Dynamic

 

dV/dt Rating  

Configuration  

Single  

• Low

 

Thermal Resistance  

• Lead

 

(Pb)-free Available  

S

TO-220 FULLPAK  

DESCRIPTION  

Third generation Power MOSFETs from Vishay provide the  

designer with the best combination of fast switching,  

ruggedized device design, low on-resistance and  

cost-effectiveness.  

G

The TO-220 FULLPAK eliminates the need for additional  

insulating hardware in commercial-industrial applications.  

The moulding compound used provides a high isolation  

capability and a low thermal resistance between the tab and  

external heatsink. This isolation is equivalent to using a 100  

micron mica barrier with standard TO-220 product. The  

FULLPAK is mounted to a heatsink using a single clip or by  

a single screw fixing.  

D

P-Channel MOSFET  

S

D

G

ORDERING INFORMATION  

Package  

TO-220 FULLPAK  

IRFI9520GPbF  

SiHFI9520G-E3  

IRFI9520G  

Lead (Pb)-free  

SnPb  

SiHFI9520G  

ABSOLUTE MAXIMUM RATINGS

T

C

= 25 °C, unless otherwise noted  

PARAMETER  

SYMBOL  

LIMIT  

– 100  

20  

UNIT  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

V

GS  

T

C

= 25 °C  

T

C

=

1

0

0

°

C  

– 5.2  

– 3.6  

– 21  

Continuous Drain Current  

V

I

D  

A

Pulsed Drain Current

a  

I

DM  

Linear Derating Factor  

0.24  

300  

W/°C  

mJ  

A

Single Pulse Avalanche Energy

b  

Repetitive Avalanche Current

a  

Repetitive Avalanche Energy

a  

E

AS  

I

AR  

– 5.2  

3.7  

E

AR  

mJ  

W

Maximum Power Dissipation  

T

P

D  

37  

Peak Diode Recovery dV/dt

c  

dV/dt  

T

J

, T

stg  

– 5.5  

– 55 to + 175  

300

d  

10  

V/ns  

Operating Junction and Storage Temperature Range  

Soldering Recommendations (Peak Temperature)  

°C  

for 10 s  

6-32 or M3 screw  

lbf · in  

N · m  

Mounting Torque  

1.1  

Notes  

a. Repetitive

 

rating; pulse width limited by maximum junction temperature (see fig. 11).  

b. V

DD

= – 25 V, starting T

J

= 25 °C, L = 16 mH, R

G

= 25

Ω

, I

AS

= – 5.2 A (see fig. 12).  

c. I

SD

≤

– 6.8 A, dI/dt

≤

110 A/µs, V

DD

≤

V

DS

, T

J

≤

175 °C.  

d. 1.6

 

mm from case.  

* Pb containing terminations are not RoHS compliant, exemptions may apply  

Document Number: 91162  

S-81361-Rev. A, 07-Jul-08  

1

IRFI9520G, SiHFI9520G  

Vishay Siliconix  

THERMAL RESISTANCE RATINGS  

PARAMETER  

SYMBOL  

TYP.  

MAX.  

65  

UNIT  

Maximum Junction-to-Ambient  

Maximum Junction-to-Case (Drain)  

R

thJA  

R

thJC  

–

–

°C/W  

4.1  

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted  

PARAMETER  

SYMBOL  

TEST CONDITIONS  

MIN.  

TYP.  

MAX.  

UNIT  

Static  

Drain-Source Breakdown Voltage  

V

DS

Temperature Coefficient  

Gate-Source Threshold Voltage  

Gate-Source Leakage  

V

DS  

Δ

V

DS

/T

J  

V

GS(th)  

I

GSS  

V

GS

= 0 V, I

D

= 250 µA  

Reference to 25 °C, I

D

= – 1 mA  

V

DS

= V

GS

, I

D

= 250 µA  

– 100  

–

–

V

V/°C  

V

–

– 0.10  

–

– 2.0  

–

–

–

–

–

–

– 4.0  

100  

– 100  

– 500  

0.60  

–

V

GS  

V

DS

= – 100 V, V

GS

= 0 V  

V

GS

= – 10 V  

I

D

= – 3.1 A

b  

V

DS

= – 50 V, I

D

= – 3.1 A

b  

=

20 V  

–

nA  

–

–

Zero Gate Voltage Drain Current  

I

DSS  

µA  

V

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic  

R

DS(on)  

g

fs  

–

Ω

1.9  

S

Input Capacitance  

C

iss  

C

oss  

C

rss  

C

–

–

–

–

–

–

–

–

–

–

–

390  

170  

45  

12  

–

–

V

GS

= 0 V,  

f = 1.0 MHz, see fig. 5  

Output Capacitance  

Reverse Transfer Capacitance  

Drain to Sink Capacitance  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

V

–

pF  

nC  

ns  

–

–

f = 1.0 MHz  

Q

g  

18  

3.0  

9.0  

–

I

D

= – 6.8 A, V

DS

= – 80 V,  

see fig. 6 and 13

b  

Q

gs  

Q

gd  

t

d(on)  

t

r  

V

GS

= – 10 V  

–

–

9.6  

29  

21  

25  

V

–

R

see fig. 10

b  

Turn-Off Delay Time  

Fall Time  

t

d(off)  

t

f  

–

–

D

Between lead,  

Internal Drain Inductance  

Internal Source Inductance  

L

D  

L

S  

–

–

4.5  

7.5  

–

–

6 mm (0.25″) from  

package and center of  

die contact  

nH  

G

S

Drain-Source Body Diode Characteristics  

D

MOSFET symbol  

showing the  

Continuous Source-Drain Diode Current  

I

S  

–

–

–

–

– 5.2  

– 21  

A

G

integral reverse  

p – n junction diode  

Pulsed Diode Forward Current

a  

I

SM  

S

Body Diode Voltage  

V

SD  

t

rr  

T

J

= 25 °C, I

S

= – 5.2 A, V

GS

= 0 V

b  

–

–

–

–

– 6.3  

200  

V

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

Forward Turn-On Time  

100  

0.33  

ns  

µC  

T

J

= 25 °C, I

F

= – 6.8 A, dI/dt = 100 A/µs

b  

Q

rr  

t

on  

0.66  

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)  

Notes  

a. Repetitive

 

rating; pulse width limited by maximum junction temperature (see fig. 11).  

b. Pulse

 

width

≤

300 µs; duty cycle

≤

2 %.  

2

Document Number: 91162  

S-81361-Rev. A, 07-Jul-08  

IRFI9520G, SiHFI9520G  

Vishay Siliconix  

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted  

Fig. 1 – Typical Output Characteristics, T

C

= 25 °C  

Fig. 3 – Typical Transfer Characteristics  

Fig. 2 – Typical Output Characteristics, T

C

= 175 °C  

Fig. 4 – Normalized On-Resistance vs. Temperature  

Document Number: 91162  

S-81361-Rev. A, 07-Jul-08  

3

IRFI9520G, SiHFI9520G  

Vishay Siliconix  

Fig. 7 – Typical Source-Drain Diode Forward Voltage  

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage  

Fig. 8 – Maximum Safe Operating Area  

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage  

4

Document Number: 91162  

S-81361-Rev. A, 07-Jul-08  

IRFI9520G, SiHFI9520G  

Vishay Siliconix  

R

D  

V

DS  

V

GS  

D.U.T.  

R

G  

–

+

V

DD  

– 10

V  

P

u

lse

w

idth

≤

1

µ

s  

D

u

ty factor

≤

0.1

%  

Fig. 10a – Switching Time Test Circuit  

t

d(on)

t

r  

t

d(off)

t

f  

V

GS  

10

%  

90

%  

V

DS  

Fig. 9 – Maximum Drain Current vs. Case Temperature  

Fig. 10b – Switching Time Waveforms  

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case  

L

I

AS  

V

DS  

V

ary t

p

to o

b

tain  

re

qu

ired I

AS  

V

DS  

D.U.T  

R

G  

–

V

+

DD  

V

DD  

I

AS  

t

p  

– 10

V

 

0.01

Ω  

t

p  

V

DS  

Fig. 12b – Unclamped Inductive Waveforms  

Fig. 12a – Unclamped Inductive Test Circuit  

Document Number: 91162  

S-81361-Rev. A, 07-Jul-08  

5

IRFI9520G, SiHFI9520G  

Vishay Siliconix  

Fig. 12c – Maximum Avalanche Energy vs. Drain Current  

C

u

rrent reg

u

lator  

Same type as D.U.T.  

50 k

Ω

 

Q

G  

– 10

V  

12

V

 

0.2

µ

F  

0.3

µ

F  

–

Q

GS  

Q

GD  

V

+

DS  

D.U.T.  

V

G  

V

GS  

– 3 mA  

Charge  

I

G  

I

D  

C

u

rrent sampling resistors  

Fig. 13b – Gate Charge Test Circuit  

Fig. 13a – Basic Gate Charge Waveform  

6

Document Number: 91162  

S-81361-Rev. A, 07-Jul-08  

IRFI9520G, SiHFI9520G  

Vishay Siliconix  

Peak Diode Recovery dV/dt Test Circuit  

D.U.T.  

+

Circ

u

it layo

u

t considerations  

•

Lo

w

stray ind

u

ctance  

•

Gro

u

nd plane  

•

Lo

w

leakage ind

u

ctance  

c

u

rrent transformer  

–

+

–

+

–

R

G  

+

–

•

d

V

/dt controlled

b

y R

G  

•

I

SD

controlled

b

y d

u

ty factor “D”  

•

D.U.T. – de

v

ice

u

nder test  

V

DD  

Compliment

N

-Channel of D.U.

T

. for dri

v

er  

Dri

v

er gate dri

v

e  

P.

W

.  

Period  

Period  

D =  

P.

W

.  

V

= – 10

V

*  

GS  

D.U.T. I

 

w

a

v

eform  

SD  

Re

v

erse  

reco

v

ery  

c

u

rrent  

Body diode for

w

ard  

c

u

rrent  

dI/dt  

D.U.T.

V w

a

v

eform  

DS  

Diode reco

v

ery  

d

V

/dt  

V

DD  

Re-applied  

v

oltage  

Body diode for

w

ard drop  

Ripple

≤

5

%  

Ind

u

ctor c

u

rrent  

I

SD  

*

V

GS

= – 5

V

for logic le

v

el and

 

– 3

V

dri

v

e de

v

ices  

Fig. 14 – For P-Channel  

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  

Document Number: 91162  

S-81361-Rev. A, 07-Jul-08  

7

Legal Disclaimer Notice  

Vishay  

Disclaimer  

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  

disclosure relating to any product.  

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  

the continuing production of any product.

 

To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  

purpose, non-infringement and merchantability.  

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  

typical requirements that are often placed on Vishay products in generic applications.

 

Such statements are not binding  

statements about the suitability of products for a particular application.

 

It is the customer’s responsibility to validate that a  

particular product with the properties described in the product specification is suitable for use in a particular application.  

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  

time. All

 

operating parameters, including typical parameters, must be validated for each customer application by the customer’s  

technical experts.

 

Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  

including but not limited to the warranty expressed therein.  

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  

such applications.  

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  

or by any conduct of Vishay.

 

Product names and markings noted herein may be trademarks of their respective owners.  

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  

Revision: 01-Jan-2019  

Document Number: 91000  

1