Vishay-Intertech-IRFP9140PBF
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IRFP9140, SiHFP9140
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
V
DS
(V)
– 100
Available
• Repetitive Avalanche Rated
R
DS(on)
(
Ω
)
V
GS
= – 10 V
0.20
RoHS*
• P-Channel
COMPLIANT
Q
g
(Max.) (nC)
61
14
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
Q
Q
gs
(nC)
gd
(nC)
29
Configuration
Single
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
S
TO-247AC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The
TO-247AC
package
is
preferred
for
S
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mouting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
D
D
P-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247AC
IRFP9140PbF
SiHFP9140-E3
IRFP9140
Lead (Pb)-free
SnPb
SiHFP9140
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
LIMIT
– 100
20
UNIT
V
DS
V
GS
V
T
C
= 25 °C
– 21
Continuous Drain Current
V
GS
at – 10 V
I
D
T
C
= 100 °C
– 15
A
Pulsed Drain Current
a
I
DM
– 84
Linear Derating Factor
1.2
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
960
– 21
E
AR
18
mJ
W
Maximum Power Dissipation
T
C
= 25 °C
P
D
180
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
– 5.5
– 55 to + 175
300
d
10
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= – 25 V, starting T
J
= 25 °C, L = 3.3 mH, R
g
= 25
Ω
, I
AS
= – 21 A (see fig. 12).
c. I
SD
≤
– 21 A, dI/dt
≤
200 A/μs, V
DD
≤
V
DS
, T
J
≤
175 °C.
d. 1.6
mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
1
This datasheet is subject to change without notice.
IRFP9140, SiHFP9140
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
R
thJA
R
thCS
R
thJC
–
0.24
–
–
°C/W
0.83
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 250 μA
Reference to 25 °C, I
D
= – 1 mA
V
DS
= V
GS
, I
D
= – 250 μA
– 100
–
–
V
V/°C
V
–
– 0.087
–
– 2.0
–
–
–
–
–
–
– 4.0
100
– 100
– 500
0.20
–
V
GS
V
DS
= – 100 V, V
GS
= 0 V
DS
= – 80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= – 10 V
I
D
= – 13 A
b
V
DS
= – 50 V, I
D
= – 13 A
b
=
20 V
–
–
nA
Zero Gate Voltage Drain Current
I
DSS
μA
V
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
–
Ω
6.2
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
1400
590
140
–
–
–
V
GS
= 0 V,
DS
= – 25 V,
f = 1.0 MHz, see fig. 5
V
pF
–
61
14
29
–
I
D
= – 19 A, V
DS
= – 80 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= – 10 V
–
nC
–
16
73
34
57
–
V
DD
= – 50 V, I
D
= – 19 A,
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
R
g
= 9.1
Ω
, R
D
= 2.4
Ω
, see fig. 10
b
–
–
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
L
D
L
S
–
–
5.0
13
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
Continuous Source-Drain Diode Current
I
S
–
–
–
–
– 21
– 84
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= – 21 A, V
GS
= 0 V
b
–
–
–
–
– 5.0
260
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
130
0.35
ns
μC
T
J
= 25 °C, I
F
= – 19 A, dI/dt = 100 A/μs
b
Q
rr
t
on
0.70
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
≤
300 μs; duty cycle
≤
2 %.
2
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
IRFP9140, SiHFP9140
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 2 – Typical Output Characteristics, T
C
= 175 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
3
This datasheet is subject to change without notice.
IRFP9140, SiHFP9140
Vishay Siliconix
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
4
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
IRFP9140, SiHFP9140
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
R
G
–
+
V
DD
– 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
10 %
90 %
V
DS
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
5
This datasheet is subject to change without notice.
IRFP9140, SiHFP9140
Vishay Siliconix
L
I
AS
V
DS
Vary t
p
to obtain
required I
AS
V
DS
D.U.T
I
AS
R
G
–
V
+
DD
V
DD
t
p
– 10 V
0.01
Ω
t
p
V
DS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
– 10 V
12 V
0.2 µF
0.3 µF
–
Q
GS
Q
GD
V
+
DS
D.U.T.
V
G
V
GS
– 3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
6
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
IRFP9140, SiHFP9140
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
D.U.T.
+
Circuit layout con
s
ideration
s
•
Low stray inductance
•
G
round plane
•
Low leakage inductance
current tran
s
former
–
+
–
+
–
R
g
+
–
•
dV/dt controlled by R
g
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
V
DD
Note
•
Compliment N-Channel of D.U.
T
.
f
or driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
GS
= – 10 V
a
D.U.T. l
S
D
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V
D
S
waveform
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= – 5 V for logic level and – 3 V drive device
s
Fig. 14 – For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
7
This datasheet is subject to change without notice.
Package Information
Vishay Siliconix
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
MILLIMETERS
MILLIMETERS
DIM.
A
MIN.
4.83
2.29
1.50
1.12
1.12
1.91
1.91
2.87
2.87
0.55
0.55
20.40
MAX.
5.21
2.55
2.49
1.33
1.28
2.39
2.34
3.22
3.18
0.69
0.65
20.70
NOTES
DIM.
D1
D2
E
MIN.
16.25
0.56
MAX.
16.85
0.76
NOTES
5
A1
A2
b
15.50
13.46
4.52
15.87
14.16
5.49
4
5
3
E1
E2
e
b1
b2
b3
b4
b5
c
6
6, 8
6
5.44 BSC
7.19 ref.
L
14.90
3.96
3.56
15.40
4.16
3.65
L1
Ø P
Ø P1
Q
6
7
c1
D
5.31
5.54
5.69
5.74
4
S
Notes
(1)
(2)
(3)
(4)
Package reference: JEDEC
®
TO247, variation AC
All dimensions are in mm
Slot required, notch may be rounded
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5)
(6)
(7)
(8)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
Revision: 08-Jan-2020
Document Number: 91360
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
VERSION 2: FACILITY CODE = Y
A
A
4
E
7
M
ØP
M
D B
(Datum B)
ØP1
B
A2
A
E/2
S
Ø k
R/2
3
D2
Q
4
4
2 x R
(2)
D1
D
L
4
D
1
2
3
Thermal pad
5
L1
C
4
E1
A
See view B
M
M
0.01 D
B
2 x b2
3 x b
View A – A
C
2 x
e
A1
b4
M
M
0.10 C
A
(b1, b3, b5)
Planting
Base metal
Lead Assignments
1. Gate
D D
E
E
2. Drain
3. Source
4. Drain
(c)
c1
C
C
(b, b2, b4)
(4)
Section C – C, D – D, E – E
View B
MILLIMETERS
MIN. MAX.
MILLIMETERS
DIM.
A
NOTES
DIM.
D2
E
MIN.
0.51
MAX.
1.30
15.87
–
NOTES
4.58
2.21
1.17
0.99
0.99
1.53
1.65
2.42
2.59
0.38
0.38
19.71
13.08
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.82
–
A1
A2
b
15.29
13.72
E1
e
5.46 BSC
0.254
b1
b2
b3
b4
b5
c
Ø k
L
14.20
3.71
3.51
–
16.25
4.29
3.66
7.39
5.69
5.49
L1
Ø P
Ø P1
Q
5.31
4.52
c1
D
R
S
5.51 BSC
D1
ECN: E19-0614-Rev. E, 08-Jan-2020
DWG: 5971
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 08-Jan-2020
Document Number: 91360
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
