Vishay-Intertech-IRFR9310TRLPBF
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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
Power MOSFET
FEATURES
• P-Channel
PRODUCT SUMMARY
V
DS
(V)
DS(on)
(
)
Q
g
(Max.) (nC)
– 400
• Surface Mount (IRFR9310, SiHFR9310)
R
V
GS
= – 10 V
7.0
• Straight Lead (IRFU9310, SiHFU9310)
• Advanced Process Technology
• Fast Switching
13
3.2
Q
gs
(nC)
gd
(nC)
Q
5.0
• Fully Avalanche Rated
Configuration
Single
• Material
categorization: For definitions of compliance
S
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
D
P
A
K
(TO-252)
I
P
A
K
(TO-251)
G
D
D
S
G
S
D
G
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
D
P-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free and
Halogen-free
SiHFR9310-GE3
SiHFR9310TRL-GE3
SiHFR9310TR-GE3
SiHFR9310TRR-GE3
SiHFU9310-GE3
IRFR9310PbF
SiHFR9310-E3
IRFR9310TRLPbF
a
SiHFR9310TL-E3
a
IRFR9310TRPbF
a
SiHFR9310T-E3
a
IRFR9310TRRPbF
a
SiHFR9310TR-E3
a
IRFU9310PbF
SiHFU9310-E3
Lead (Pb)-free
Note
a. See
device orientation.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
– 400
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
T
C
= 25 °C
– 1.8
– 1.1
– 7.2
0.40
Continuous Drain Current
V
GS
at – 10 V
I
D
A
T
C
= 100 °C
Pulsed Drain Current
a
I
DM
W/°C
mJ
A
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
92
– 1.8
5.0
mJ
W
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
50
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
– 24
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
– 55 to + 150
300
°C
for 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting
T
J
= 25 °C, L = 57 mH, R
g
= 25
, I
AS
= – 1.8 A (see fig. 12).
c. I
SD
– 1.1 A, dI/dt
450 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6
mm from case.
S13-0166-Rev. D, 04-Feb-13
Document Number: 91284
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
R
thJA
R
thJC
–
–
110
Maximum Junction-to-Ambient
(PCB Mount)
a
–
–
–
–
50
°C/W
Maximum Junction-to-Case (Drain)
2.5
Note
a. When
mounted on 1″ square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 250 μA
Reference to 25 °C, I
D
= – 1 mA
V
DS
= V
GS
, I
D
= – 250 μA
– 400
–
–
–
V
V/°C
V
V
DS
Temperature Coefficient
–
– 0.41
Gate-Source Threshold Voltage
Gate-Source Leakage
– 2.0
–
–
–
–
–
–
– 4.0
100
– 100
– 500
7.0
–
V
GS
=
20 V
–
nA
V
DS
= – 400 V, V
GS
= 0 V
–
Zero Gate Voltage Drain Current
I
DSS
μA
V
DS
= – 320 V, V
GS
= 0 V, T
J
= 125 °C
–
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
V
GS
= – 10 V
I
D
= – 1.1 A
b
V
DS
= – 50 V, I
D
= – 1.1 A
0.91
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
270
50
8.0
–
–
–
V
GS
= 0 V,
V
DS
= – 25 V,
pF
nC
f = 1.0 MHz, see fig. 5
–
13
3.2
5.0
–
I
D
= – 1.1 A, V
DS
= – 320 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= – 10 V
–
–
11
10
25
24
–
V
DD
= – 200 V, I
D
= – 1.1 A,
ns
R
g
= 21
, R
D
= 180
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
D
Between lead,
Internal Drain Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact
c
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
D
MOSFET symbol
showing the
integral reverse
p – n junction diode
I
S
–
–
–
–
– 1.9
– 7.6
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= – 1.1 A, V
GS
= 0 V
b
–
–
–
–
– 4.0
260
960
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
170
640
ns
nC
T
J
= 25 °C, I
F
= -1.1 A, dI/dt = 100 A/μs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
300 μs; duty cycle
2 %.
c. This
is applied for IPAK, L
S
of DPAK is measured between lead and center of die contact.
S13-0166-Rev. D, 04-Feb-13
Document Number: 91284
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
10
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
°
T =
25 C
J
BOTTO
M
–
4.5V
°
T =
150 C
J
1
1
0.1
10
1
-4.5V
20μs PULSE WIDTH
V
= -50V
DS
°
T =
25 C
J
20μs PULSE WIDTH
0.1
1
10
100
4
5
6
7
8
9
10
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Gate-to-Source Voltage (V)
GS
Fig. 1 –
Typical Output Characteristics
Fig. 3 – Typical Transfer Characteristics
2.5
VGS
-1.8A
=
I
D
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
2.0
1.5
1.0
0.5
0.0
BOTTO
M
–
4.5V
-4.5V
20μs PULSE WIDTH
°
V
=
–
10V
T =
150 C
J
GS
0.1
1
10
100
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
-V ,
Drain-to-Source Voltage (V)
DS
T ,
Junction Temperature
( C)
J
Fig. 2 – Typical Output Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
S13-0166-Rev. D, 04-Feb-13
Document Number: 91284
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
10
500
400
300
200
100
0
V
= 0V,
f = 1MHz
GS
C
= C
+ C
C
SHORTED
iss
gs gd
,
ds
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
C
iss
°
T =
150 C
J
1
°
T =
25 C
J
C
C
oss
rss
V
= 0 V
GS
0.1
1
10
100
1.0
2.0
3.0
4.0
5.0
-V ,
Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain
Voltage (V)
SD
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
100
20
I
D
= -1.1A
OPERATION IN THIS AREA LIMITED
BY R
V
V
V
=-320V
=-200V
=-80V
DS(on)
DS
DS
DS
16
12
8
10
1
10us
100us
1ms
4
°
T =
25 C
J
C
10ms
°
T =
150 C
FOR TEST CIRCUIT
SEE FIGURE 13
Single Pulse
0
0.1
0
4
8
12
16
10
100
1000
Q ,
Total Gate Charge (nC)
-V ,
Drain-to-Source Voltage (V)
DS
G
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
S13-0166-Rev. D, 04-Feb-13
Document Number: 91284
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
R
D
V
DS
2.0
1.6
1.2
0.8
0.4
0.0
V
GS
D.U.T.
R
g
–
+
V
DD
– 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
10 %
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
90 %
V
DS
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
0.1
t
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
S13-0166-Rev. D, 04-Feb-13
Document Number: 91284
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
L
V
DS
I
AS
–
+ V
R
g
D.U.T.
I
AS
A
DD
Driver
– 20 V
0.01
Ω
t
p
t
p
15 V
V
DS
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12a – Unclamped Inductive Test Circuit
300
250
200
150
100
50
I
D
TOP
-0.49A
-0.7A
BOTTOM -1.1A
0
25
50
75
100
125
150
°
Starting T
, Junction Temperature (
C)
J
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
– 10 V
12 V
0.2 µF
0.3 µF
–
Q
GS
Q
GD
V
+
DS
D.U.T.
V
G
V
GS
– 3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
S13-0166-Rev. D, 04-Feb-13
Document Number: 91284
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
D.U.T.
+
Circuit layout con
s
ideration
s
•
Low stray inductance
•
G
round plane
•
Low leakage inductance
current tran
s
former
–
+
–
+
–
R
g
+
–
•
dV/dt controlled by R
g
•
I
S
D
controlled by duty factor “D”
V
DD
•
D.U.T. – device under te
s
t
Note
•
Compliment N-Channel of D.U.
T
.
f
or driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
GS
= – 10 V
a
D.U.T. l
S
D
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V
D
S
waveform
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= – 5 V for logic level and – 3 V drive device
s
Fig. 14 – For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S13-0166-Rev. D, 04-Feb-13
Document Number: 91284
7
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
b3
E1
b
C
b2
e
A1
e1
MILLIMETERS
DIM.
A
MIN.
2.18
–
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
b2
b3
C
C2
D
D1
E
6.73
–
E1
H
10.41
e
2.28 BSC
4.56 BSC
e1
L
1.40
0.89
–
1.78
1.27
1.02
1.52
L3
L4
L5
1.01
Note
Dimension L3 is for reference only
•
Revision: 16-Dec-2019
Document Number: 71197
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
VERSION 2: FACILITY CODE = N
e
E
A
b3
E1
c2
E1/2
e
2x b2
2x e
3x b
DETAIL “B”
(b)
0.25
C A B
C
H
b1
SEATING
PLANE
GAUGE
PLANE
DETAIL “B”
C
L
C
(L1)
MILLIMETERS
MILLIMETERS
DIM.
L
MIN.
MAX.
DIM.
A
MIN.
2.18
–
MAX.
2.39
0.13
0.89
0.79
1.13
5.46
0.61
0.56
0.60
6.22
–
1.50
1.78
L1
L2
L3
L4
L5
L6
2.74 ref.
A1
b
0.51 BSC
0.65
0.64
0.76
4.95
0.46
0.41
0.46
5.97
5.21
6.35
4.32
0.89
–
1.27
1.02
1.49
0.85
10°
b1
b2
b3
c
1.14
0.65
0°
c1
c2
D
1
2
0°
15°
25°
35°
Notes
D1
E
•
•
•
•
Dimensioning and tolerance confirm to ASME Y14.5M-1994
All dimensions are in millimeters. Angles are in degrees
Heat sink side flash is max. 0.8 mm
6.73
–
E1
e
2.29 BSC
Radius on terminal is optional
H
9.94
10.34
ECN: E19-0649-Rev. Q, 16-Dec-2019
DWG: 5347
Revision: 16-Dec-2019
Document Number: 71197
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
4
3
A
E1
E
Thermal
P
A
D
A
4
0.010
M
A B
C
0.25
c2
b
4
L2
4
A
θ
1
θ
2
D1
4
B
C
3
Seating
plane
5
C
B
C
L3
L1
(Dat
u
m A)
L
B
A
A1
3 x
b
2
3 x
b
c
V
ie
w
A – A
M
0.010
C A B
0.25
2 x e
Base
metal
5
Plating
(c)
b
1,
b
3
Lead tip
5
c1
(
b
,
b
2)
Section B – B and C – C
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MAX.
DIM.
A
MIN.
2.18
0.89
0.64
0.65
0.76
0.76
4.95
0.46
0.41
0.46
5.97
MAX.
2.39
1.14
0.89
0.79
1.14
1.04
5.46
0.61
0.56
0.86
6.22
MIN.
0.086
0.035
0.025
0.026
0.030
0.030
0.195
0.018
0.016
0.018
0.235
MAX.
0.094
0.045
0.035
0.031
0.045
0.041
0.215
0.024
0.022
0.034
0.245
DIM.
D1
E
MIN.
5.21
6.35
4.32
MAX.
MIN.
0.205
0.250
0.170
–
6.73
–
–
0.265
–
A1
b
E1
e
b1
b2
b3
b4
c
2.29 BSC
2.29 BSC
L
8.89
1.91
0.89
1.14
0′
9.65
2.29
1.27
1.52
15′
0.350
0.075
0.035
0.045
0′
0.380
0.090
0.050
0.060
15′
L1
L2
L3
θ
1
θ
2
c1
c2
D
25′
35′
25′
35′
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
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