Vishay-Intertech-IRFU9010PBF
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IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Surface
Mountable (Order as IRFR9010,
SiHFR9010)
V
DS
(V)
DS(on)
(
)
Q
g
(Max.) (nC)
– 50
• Straight
Lead Option (Order as IRFU9010,
R
V
GS
= – 10 V
0.50
SiHFU9010)
9.1
3.0
5.9
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
Q
gs
(nC)
gd
(nC)
• Simple Drive Requirements
• Ease of Paralleling
• Material
categorization: For definitions of compliance
Q
Configuration
Single
S
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
D
P
A
K
(TO-252)
I
P
A
K
(TO-251)
G
D
D
S
G
S
D
G
D
P-Channel MOSFET
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
DPAK (TO-252)
SiHFR9010-GE3
IRFR9010PbF
SiHFR9010-E3
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
SiHFU9010-GE3
IRFU9010PbF
SiHFU9010-E3
SiHFR9010TR-GE3
a
IRFR9010TRPbF
a
SiHFR9010T-E3
a
SiHFR9010TRL-GE3
a
IRFR9010TRLPbF
a
SiHFR9010TL-E3
a
Lead (Pb)-free
Note
a. See
device orientation.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
– 50
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
C
= 100 °C
– 5.3
– 3.3
– 21
Continuous Drain Current
V
GS
at – 10 V
I
D
T
A
Pulsed Drain Current
a
I
DM
Linear Derating Factor
0.20
136
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
– 5.3
2.5
E
AR
mJ
W
Maximum Power Dissipation
T
C
= 25 °C
P
D
25
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
5.8
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
– 55 to + 150
300
°C
for 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= – 25 V, starting T
J
= 25 °C, L = 9.7 mH, R
g
= 25
, peak I
L
= – 5.3 A.
c. I
SD
– 5.3 A, dI/dt
– 80 A/μs, V
DD
40 V, T
J
150 °C, suggested R
g
= 24
.
d. 0.063″
(1.6 mm) from case.
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
110
–
UNIT
Maximum Junction-to-Ambient
R
thJA
R
thCS
R
thJC
–
–
–
–
1.7
–
Case-to-Sink
Maximum Junction-to-Case (Drain)
a
°C/W
5.0
Note
a. Mounting
pad must cover heatsink surface area.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 250 μA
V
DS
= V
GS
, I
D
= – 250 μA
– 50
–
–
– 4.0
500
– 250
– 1000
0.5
V
V
– 2.0
–
–
V
GS
V
DS
= max. rating, V
GS
= 0 V
= 0.8 x max. rating, V
= 0 V, T
= 125 °C
=
20 V
–
–
nA
–
Zero Gate Voltage Drain Current
I
DSS
μA
V
DS
–
–
GS
J
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
V
GS
= – 10 V
I
D
= – 2.8 A
b
–
0.35
1.7
V
DS
– 50 V, I
DS
= – 2.8 A
1.1
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
240
160
30
–
V
GS
= 0 V,
V
DS
= – 25 V,
–
pF
nC
f = 1.0 MHz, see fig. 9
–
6.1
2.0
3.9
6.1
47
9.1
3.0
5.9
9.2
71
20
59
I
D
= – 4.7 A, V
DS
= 0.8 x max.
rating, see fig. 16
(Independent operating
temperature)
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= – 10 V
V
DD
= – 25 V, I
D
= – 4.7 A,
R
g
= 24
, R
D
= 5.6
, see fig. 15
(Independent operating temperature)
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
13
35
D
Between lead,
Internal Drain Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact.
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
I
S
–
–
–
–
– 5.3
– 18
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= – 5.3 A, V
GS
= 0 V
b
–
–
– 5.5
160
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
33
75
ns
μC
T
J
= 25 °C, I
F
= – 4,7 A, dI/dt = 100 A/μs
b
Q
rr
t
on
0.090
0.22
0.52
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse
width
300 μs; duty cycle
2 %.
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics
Fig. 4 – Maximum Safe Operating Area
Fig. 5 – Typical Transconductance vs. Drain Current
Fig. 2 – Typical Transfer Characteristics
Fig. 6 – Typical Source-Drain Diode Forward Voltage
Fig. 3 – Typical Saturation Characteristics
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Fig. 7 – Breakdown Voltage vs. Temperature
Fig. 9 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 10 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 – Normalized On-Resistance vs. Temperature
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Fig. 13a – Maximum Avalanche vs. Starting Junction
Temperature
Fig. 11 – Typical On-Resistance vs. Drain Current
L
V
DS
Vary t
p
to obtain
required I
L
D.U.T.
R
g
–
V
+
DD
– 10 V
0.05
Ω
t
p
I
L
Fig. 13b – Unclamped Inductive Test Circuit
I
AS
V
DS
I
L
V
DD
t
p
Fig. 12 – Maximum Drain Current vs. Case Temperature
V
DS
Fig. 13c – Unclamped Inductive Waveforms
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Fig. 14 – Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
t
d(on)
t
r
t
d(off)
t
f
Q
G
V
GS
– 10 V
10 %
Q
GS
Q
GD
V
G
90 %
V
DS
Charge
Fig. 16a – Basic Gate Charge Waveform
Fig. 15a – Switching Time Waveforms
Current regulator
Same type as D.U.T.
R
D
V
DS
50 k
Ω
V
GS
12 V
0.2 µF
D.U.T.
0.3 µF
R
g
–
–
+
V
DD
V
+
DS
D.U.T.
– 10 V
V
GS
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
– 3 mA
I
G
I
D
Current sampling resistors
Fig. 15b – Switching Time Test Circuit
Fig. 16b – Gate Charge Test Circuit
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
D.U.T.
+
Circuit layout con
s
ideration
s
•
Low stray inductance
•
G
round plane
•
Low leakage inductance
current tran
s
former
–
+
–
+
–
R
g
+
–
•
dV/dt controlled by R
g
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
V
DD
Note
•
Compliment N-Channel of D.U.
T
.
f
or driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
GS
= – 10 V
a
D.U.T. l
S
D
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V
D
S
waveform
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= – 5 V for logic level and – 3 V drive device
s
Fig. 17 – For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S13-0167-Rev. D, 04-Feb-13
Document Number: 91378
7
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
b3
E1
b
C
b2
e
A1
e1
MILLIMETERS
DIM.
A
MIN.
2.18
–
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
b2
b3
C
C2
D
D1
E
6.73
–
E1
H
10.41
e
2.28 BSC
4.56 BSC
e1
L
1.40
0.89
–
1.78
1.27
1.02
1.52
L3
L4
L5
1.01
Note
Dimension L3 is for reference only
•
Revision: 16-Dec-2019
Document Number: 71197
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
VERSION 2: FACILITY CODE = N
e
E
A
b3
E1
c2
E1/2
e
2x b2
2x e
3x b
DETAIL “B”
(b)
0.25
C A B
C
H
b1
SEATING
PLANE
GAUGE
PLANE
DETAIL “B”
C
L
C
(L1)
MILLIMETERS
MILLIMETERS
DIM.
L
MIN.
MAX.
DIM.
A
MIN.
2.18
–
MAX.
2.39
0.13
0.89
0.79
1.13
5.46
0.61
0.56
0.60
6.22
–
1.50
1.78
L1
L2
L3
L4
L5
L6
2.74 ref.
A1
b
0.51 BSC
0.65
0.64
0.76
4.95
0.46
0.41
0.46
5.97
5.21
6.35
4.32
0.89
–
1.27
1.02
1.49
0.85
10°
b1
b2
b3
c
1.14
0.65
0°
c1
c2
D
1
2
0°
15°
25°
35°
Notes
D1
E
•
•
•
•
Dimensioning and tolerance confirm to ASME Y14.5M-1994
All dimensions are in millimeters. Angles are in degrees
Heat sink side flash is max. 0.8 mm
6.73
–
E1
e
2.29 BSC
Radius on terminal is optional
H
9.94
10.34
ECN: E19-0649-Rev. Q, 16-Dec-2019
DWG: 5347
Revision: 16-Dec-2019
Document Number: 71197
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
4
3
A
E1
E
Thermal
P
A
D
A
4
0.010
M
A B
C
0.25
c2
b
4
L2
4
A
θ
1
θ
2
D1
4
B
C
3
Seating
plane
5
C
B
C
L3
L1
(Dat
u
m A)
L
B
A
A1
3 x
b
2
3 x
b
c
V
ie
w
A – A
M
0.010
C A B
0.25
2 x e
Base
metal
5
Plating
(c)
b
1,
b
3
Lead tip
5
c1
(
b
,
b
2)
Section B – B and C – C
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MAX.
DIM.
A
MIN.
2.18
0.89
0.64
0.65
0.76
0.76
4.95
0.46
0.41
0.46
5.97
MAX.
2.39
1.14
0.89
0.79
1.14
1.04
5.46
0.61
0.56
0.86
6.22
MIN.
0.086
0.035
0.025
0.026
0.030
0.030
0.195
0.018
0.016
0.018
0.235
MAX.
0.094
0.045
0.035
0.031
0.045
0.041
0.215
0.024
0.022
0.034
0.245
DIM.
D1
E
MIN.
5.21
6.35
4.32
MAX.
MIN.
0.205
0.250
0.170
–
6.73
–
–
0.265
–
A1
b
E1
e
b1
b2
b3
b4
c
2.29 BSC
2.29 BSC
L
8.89
1.91
0.89
1.14
0′
9.65
2.29
1.27
1.52
15′
0.350
0.075
0.035
0.045
0′
0.380
0.090
0.050
0.060
15′
L1
L2
L3
θ
1
θ
2
c1
c2
D
25′
35′
25′
35′
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
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or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
