Vishay-Intertech-IRFZ14STRLPBF
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IRFZ14S, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Power MOSFET
FEATURES
D
• Advanced process technology
• Surface-mount (IRFZ14S, SiHFZ14S)
• Low profile through-hole (SiHFZ14L)
• 175 °C operating temperature
• Fast switching
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
Available
Available
G
• Material
categorization: for definitions of
D
G
Note
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant.
For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
S
*
D
S
S
G
N-Channel MO
S
FET
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient reliable device for use in a wide
variety of applications.
The D
2
PAK (TO-263) is a surface-mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and lowest possible
on-resistance in any existing surface-mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface-mount application.
PRODUCT SUMMARY
V
DS
(V)
60
0.20
11
R
DS(on)
(
)
V
GS
= 10 V
Q
g
max. (nC)
Q
gs
(nC)
gd
(nC)
3.1
Q
5.8
Configuration
Single
The through-hole version (SiHFZ44L) is available for low
profile applications.
ORDERING INFORMATION
Package
D
2
PAK (TO-263)
D
2
PAK (TO-263)
SiHFZ14STRL-GE3
a
IRFZ14STRLPbF
a
I
2
PAK (TO-262)
SiHFZ14L-GE3
–
Lead (Pb)-free and halogen-free
Lead (Pb)-free
SiHFZ14S-GE3
IRFZ14SPbF
Note
a. See
device orientation
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
V
DS
60
20
V
V
GS
T
C
= 25 °C
10
Continuous drain current
V
GS
at 10 V
I
D
T
C
= 100 °C
7.2
A
Pulsed drain current
a
I
DM
40
Linear derating factor
Single pulse avalanche energy
b
0.29
47
W/°C
mJ
E
AS
P
D
Maximum power dissipation
T
C
= 25 °C
43
W
V/ns
°C
Maximum power dissipation (PCB mount)
e
Peak diode recovery dv/dt
c
T
A
= 25 °C
3.7
dv/dt
4.5
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d
T
J
, T
stg
-55 to +175
300
For 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11)
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 548 μH, R
g
= 25
, I
AS
= 10 A (see fig. 12)
c. I
SD
10 A, di/dt
90 A/μs, V
DD
V
DS
, T
J
175 °C
d. 1.6
mm from case
e. When
mounted on 1″ square PCB (FR-4 or G-10 material)
S20-0684-Rev. D, 07-Sep-2020
Document Number: 90365
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFZ14S, SiHFZ14S, SiHFZ14L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum junction-to-ambient
R
thJA
R
thJC
–
–
(PCB mount)
a
°C/W
Maximum junction-to-case (drain)
3.5
Note
a. When
mounted on 1″ square PCB (FR-4 or G-10 material)
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
60
–
–
–
–
V
V/°C
V
V
DS
temperature coefficient
0.063
Gate-source threshold voltage
Gate-source leakage
2.0
–
–
–
–
–
–
–
4.0
100
25
250
0.2
–
V
GS
V
DS
= 60 V, V
GS
= 0 V
DS
= 48 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 6.0 A
b
V
DS
= 25 V, I
D
= 6.0 A
b
=
20 V
nA
–
Zero gate voltage drain current
I
DSS
μA
V
–
Drain-source on-state resistance
Forward transconductance
Dynamic
R
DS(on)
g
fs
–
2.4
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
300
160
29
–
–
–
V
GS
= 0 V,
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
pF
–
11
3.1
5.8
–
I
D
= 10 A, V
DS
= 48 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
–
nC
–
10
50
13
19
–
V
DD
= 30 V, I
D
= 10 A,
ns
R
g
= 24
, R
D
= 2.7
, see fig. 10
b
Turn-off delay time
Fall time
t
d(off)
t
f
–
–
Internal source inductance
L
S
Between lead, and center of die contact
–
7.5
–
nH
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
D
MOSFET symbol
I
S
–
–
–
–
10
40
showing the
A
G
integral reverse
Pulsed diode forward current
a
I
SM
p – n junction diode
S
Body diode voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 10 A, V
GS
= 0 V
b
–
–
–
–
1.6
140
400
V
Body diode reverse recovery time
Body diode reverse recovery charge
Forward turn-on time
70
ns
μC
T
J
= 25 °C, I
F
= 10 A, di/dt = 100 A/μs
b
Q
rr
t
on
200
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse
width
300 μs; duty cycle
2 %
S20-0684-Rev. D, 07-Sep-2020
Document Number: 90365
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFZ14S, SiHFZ14S, SiHFZ14L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics
Fig. 3 – Typical Transfer Characteristics
Fig. 2 – Typical Output Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
S20-0684-Rev. D, 07-Sep-2020
Document Number: 90365
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFZ14S, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
S20-0684-Rev. D, 07-Sep-2020
Document Number: 90365
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFZ14S, SiHFZ14S, SiHFZ14L
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
R
g
+
V
–
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
S20-0684-Rev. D, 07-Sep-2020
Document Number: 90365
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFZ14S, SiHFZ14S, SiHFZ14L
Vishay Siliconix
L
V
DS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
R
g
D.U.T.
I
AS
+
–
V
DD
V
DS
10 V
0.01
Ω
t
p
I
AS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
10 V
12 V
0.2 µF
0.3 µF
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b –
Gate Charge Test Circuit
S20-0684-Rev. D, 07-Sep-2020
Document Number: 90365
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFZ14S, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S20-0684-Rev. D, 07-Sep-2020
Document Number: 90365
7
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
B
(Dat
u
m A)
3
4
A
A
E
c2
H
L1
4
Ga
u
ge
plane
0° to
8
°
4
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale
8
:1
A
2 x
b
2
2 x
b
c
E
M
M
B
0.010
A
M
0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b
1,
b
3
5
c1
(
b
,
b
2)
Lead tip
4
E1
Section B – B and C – C
Scale: none
V
ie
w
A – A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
–
10.67
–
0.270
0.380
0.245
–
0.420
–
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
–
–
–
–
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
D
W
G: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
1
Package Information
Vishay Siliconix
I
2
PAK (TO-262) (HIGH VOLTAGE)
A
B
A
(Dat
u
m A)
E
c2
A
E
L1
D
Seating
plane
D1
C
C
L2
B
B
L
A
c
E1
3 x
b
2
3 x
b
A1
Section A – A
Base
metal
2 x e
b
1,
b
3
Plating
M
M
B
0.010
A
c1
c
(
b
,
b
2)
Lead tip
Section B – B and C – C
Scale:
N
one
MILLIMETERS
INCHES
MAX.
MILLIMETERS
INCHES
MAX.
DIM.
A
MIN.
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
DIM.
MIN.
MAX.
MIN.
0.330
0.270
0.380
0.245
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
D
D1
E
8.38
6.86
9.65
6.22
9.65
0.380
A1
b
–
10.67
–
–
0.420
–
b1
b2
b3
c
E1
e
2.54 BSC
0.100 BSC
L
13.46
–
14.10
1.65
3.71
0.530
–
0.555
0.065
0.146
L1
L2
c1
c2
3.56
0.140
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
Document Number: 91367
Revision: 27-Oct-08
1
AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number:
73397
11-Apr-05
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
