Vishay-Intertech-IRL630PBF
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IRL630, SiHL630
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
V
DS
(V)
200 V
Available
• Repetitive Avalanche Rated
• Logic Level Gate Drive
R
DS(on)
(
Ω
)
V
GS
= 5 V
0.40
RoHS*
COMPLIANT
Q
g
(Max.) (nC)
Q
gs
(nC)
40
5.5
• R
DS(on)
Specified at V
GS
= 4 V and 5 V
• 150 °C Operating Temperature
• Fast Switching
Q
gd
(nC)
24
Configuration
Single
• Ease of Paralleling
D
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRL630PbF
SiHL630-E3
IRL630
Lead (Pb)-free
SnPb
SiHL630
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
200
V
V
GS
10
T
C
= 25 °C
T
C
= 100 °C
9.0
Continuous Drain Current
V
GS
at 5.0 V
I
D
5.7
A
Pulsed Drain Current
a
I
DM
36
0.59
250
Linear Derating Factor
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
9.0
E
AR
7.4
mJ
W
Maximum Power Dissipation
T
C
= 25 °C
P
D
74
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
5.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
– 55 to + 150
300
d
10
°C
for 10 s
6-32 or M3 screw
lbf · in
N · m
Mounting Torque
1.1
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 4.6 mH, R
g
= 25
Ω,
I
AS
= 9.0 A (see fig. 12).
c. I
SD
≤
9.0 A, dV/dt
≤
120 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6
mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91303
S11-0519-Rev. B, 21-Mar-11
1
This datasheet is subject to change without notice.
IRL630, SiHL630
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
–
0.50
–
R
thCS
–
°C/W
R
thJC
1.7
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
200
–
–
–
V
V/°C
V
–
1.0
–
0.27
–
–
–
–
–
–
–
2.0
V
GS
=
10
100
25
nA
V
DS
= 200 V, V
GS
= 0 V
–
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
I
DSS
μA
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
–
250
0.40
0.50
–
V
GS
= 5.0 V
GS
= 4.0 V
I
D
= 5.4 A
b
I
D
= 4.5 A
b
–
R
DS(on)
g
fs
Ω
V
–
Forward Transconductance
Dynamic
V
DS
= 50 V, I
D
= 5.4 A
b
4.8
S
V
GS
= 0 V
V
DS
= 25 V
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
1100
220
70
–
–
–
Output Capacitance
Reverse Transfer Capacitance
pF
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
–
–
–
–
–
–
40
5.5
24
I
D
= 9.0 A, V
DS
= 160 V,
see fig. 6 and 13
b
V
GS
= 10 V
nC
Turn-On Delay Time
Rise Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
8.0
57
38
33
–
–
–
–
V
DD
= 100 V, I
D
= 9.0 A
ns
R
g
= 6.0
Ω
, R
D
= 11
Ω
, see fig. 10
b
Turn-Off Delay Time
Fall Time
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
Continuous Source-Drain Diode Current
I
S
–
–
–
9.0
36
A
G
Pulsed Diode Forward Current
a
I
SM
–
–
S
T
J
= 25 °C, I
S
= 9.0 A, V
GS
= 0 V
b
2.0
350
2.6
V
Body Diode Voltage
V
SD
t
rr
–
–
–
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
230
1.7
ns
μC
T
J
= 25 °C, I
F
= 9.0 A, dI/dt = 100 A/μs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
≤
300 μs; duty cycle
≤
2 %.
2
Document Number: 91303
S11-0519-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRL630, SiHL630
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 2 – Typical Output Characteristics, T
C
= 150 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
Document Number: 91303
S11-0519-Rev. B, 21-Mar-11
3
This datasheet is subject to change without notice.
IRL630, SiHL630
Vishay Siliconix
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
4
Document Number: 91303
S11-0519-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRL630, SiHL630
Vishay Siliconix
r
D
V
DS
V
GS
D.U.T.
r
G
+
V
–
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91303
S11-0519-Rev. B, 21-Mar-11
5
This datasheet is subject to change without notice.
IRL630, SiHL630
Vishay Siliconix
L
V
DS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
D.U.T
I
AS
r
G
+
–
V
DD
V
DS
A
10 V
0.01
Ω
t
p
I
AS
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
V
GS
12 V
0.2 µF
0.3 µF
+
–
Q
GS
Q
GD
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13b – Gate Charge Test Circuit
Fig. 13a – Basic Gate Charge Waveform
6
Document Number: 91303
S11-0519-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
IRL630, SiHL630
Vishay Siliconix
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 91303
S11-0519-Rev. B, 21-Mar-11
7
This datasheet is subject to change without notice.
Package Information
Vishay Siliconix
TO-220-1
MILLIMETERS
MIN.
INCHES
MIN.
A
DIM.
E
MAX.
4.65
1.02
1.78
0.61
15.85
10.52
2.67
5.28
1.40
6.71
2.92
14.40
4.04
3.94
3.00
MAX.
0.183
0.040
0.070
0.024
0.624
0.414
0.105
0.208
0.055
0.264
0.115
0.567
0.159
0.155
0.118
F
A
b
4.24
0.69
1.14
0.36
14.33
9.96
2.41
4.88
1.14
6.10
2.41
13.36
3.33
3.53
2.54
0.167
0.027
0.045
0.014
0.564
0.392
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.100
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
•
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
A
S
E
Xi’an
Revison: 14-Dec-15
Document Number: 66542
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
