Vishay-Intertech-IRLD120PBF
| Part # | Vishay-Intertech-IRLD120PBF |
Download  | Vishay-Intertech-IRLD120PBF |
IRLD120, SiHLD120
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic
dV/dt Rating
PRODUCT SUMMARY
V
DS
(V)
100
A
v
aila
b
le
• Repetitive
Avalanche Rated
• For
Automatic Insertion
R
DS(on)
(
)
V
GS
= 5.0 V
0.27
RoHS*
COMPLIANT
Q
g
(Max.) (nC)
12
3.0
• End
Stackable
Q
Q
gs
(nC)
gd
(nC)
• Logic-Level
Gate Drive
7.1
• R
DS(on)
Specified at V
GS
= 4 V and 5 V
• 175
°C Operating Temperature
• Compliant
to RoHS Directive 2002/95/EC
Configuration
Single
D
HVMDIP
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
S
G
D
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1″ pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
S
N
-Channel MOSFET
ORDERING INFORMATION
Package
HVMDIP
IRLD120PbF
SiHLD120-E3
IRLD120
Lead (Pb)-free
SnPb
SiHLD120
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
100
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
10
T
A
= 25 °C
T
A
= 100 °C
1.3
Continuous Drain Current
V
GS
at 5.0 V
I
D
0.94
10
A
Pulsed Drain Current
a
I
DM
Linear Derating Factor
0.0083
690
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Avalanche Current
a
E
AS
I
AR
1.3
Repetitive Avalanche Energy
a
E
AR
0.13
1.3
mJ
W
Maximum Power Dissipation
T
A
= 25 °C
P
D
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
5.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
– 55 to + 175
300
d
°C
for 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 153 mH, R
g
= 25
, I
AS
= 2.6 A (see fig. 12).
c. I
SD
9.2 A, dI/dt
110 A/µs, V
DD
V
DS
, T
J
175 °C.
d. 1.6
mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
1
IRLD120, SiHLD120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
–
120
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
100
–
–
V
V/°C
V
V
DS
Temperature Coefficient
–
0.12
–
Gate-Source Threshold Voltage
Gate-Source Leakage
1.0
–
–
–
–
–
–
–
2.0
100
25
V
GS
V
DS
= 100 V, V
GS
= 0 V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C
=
10 V
–
nA
–
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
I
DSS
µA
V
–
–
250
0.27
0.38
–
V
GS
= 5.0 V
V
GS
= 4.0 V
I
D
= 0.78 A
b
I
D
= 0.65 A
b
R
DS(on)
g
fs
–
Forward Transconductance
Dynamic
V
DS
= 50 V, I
D
= 0.78 A
b
1.9
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
490
150
30
–
–
V
GS
= 0 V,
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
–
–
pF
nC
12
3.0
7.1
–
I
D
= 9.2 A, V
DS
= 80 V,
see fig. 6 and 13
b
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 5.0 V
–
–
9.8
64
21
27
–
V
DD
= 50 V, I
D
= 9.2 A,
ns
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
R
g
= 9.0
, R
D
= 5.2
, see fig. 10
b
–
–
D
Between lead,
Internal Drain Inductance
L
D
L
S
–
–
4.0
6.0
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
I
S
–
–
–
–
1.3
10
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 1.3 A, V
GS
= 0 V
b
–
–
–
–
2.5
140
1.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
130
0.83
ns
µC
T
J
= 25 °C, I
F
= 9.2 A, dI/dt = 100 A/µs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
300 µs; duty cycle
2 %.
2
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
IRLD120, SiHLD120
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20 µs PULSE WIDTH
T
= 25 °C
A
Fig. 1 – Typical Output Characteristics, T
A
= 25 °C
Fig. 3 – Typical Transfer Characteristics
20 µs PULSE WIDTH
T
A
= 175 °C
Fig. 2 – Typical Output Characteristics, T
A
= 175 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
3
IRLD120, SiHLD120
Vishay Siliconix
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
T
T
= 25 °C
= 175 °C
A
J
SINGLE PULSE
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
4
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
IRLD120, SiHLD120
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
R
g
+
V
–
DD
10
V
P
u
lse
w
idth
≤
1
µ
s
D
u
ty factor
≤
0.1
%
Fig. 10a – Switching Time Test Circuit
V
DS
90
%
10
%
V
GS
T ,
Ambient
T
e
mperature (°C)
A
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Ambient Temperature
Fig. 10b – Switching Time Waveforms
t ,
Rectangular Pulse Duration (s)
1
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
5
IRLD120, SiHLD120
Vishay Siliconix
L
V
DS
V
DS
V
ary t
p
to o
b
tain
req
u
ired I
AS
t
p
V
DD
D.U.T
I
AS
R
g
+
–
V
DD
V
DS
5
V
0.01
W
t
p
I
AS
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
C
u
rrent reg
u
lator
Same type as D.U.T.
50 k
Ω
Q
G
V
GS
12
V
0.2
µ
F
0.3
µ
F
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
C
u
rrent sampling resistors
Fig. 13b – Gate Charge Test Circuit
Fig. 13a – Basic Gate Charge Waveform
6
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
IRLD120, SiHLD120
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
•
Low stray inductance
•
Ground plane
D.U.T.
•
Low leakage inductance
current transformer
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
+
•
Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
•
D.U.T. – device under test
V
DD
–
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
SD
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level devices
Fig. 14 – For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 91310
S10-2465-Rev. C, 08-Nov-10
7
Package Information
Vishay Siliconix
HVM DIP
(High voltage)
0.248 [6.29]
0.240 [6.10]
0.043 [1.09]
0.035 [0.89]
0.197 [5.00]
0.189 [4.80]
0.133 [3.37]
0.125 [3.18]
0.180 [4.57]
0.160 [4.06]
0.094 [2.38]
0.086 [2.18]
A
L
0.160 [4.06]
0.140 [3.56]
0° to 15°
2 x
0.017 [0.43]
0.013 [0.33]
0.045 [1.14]
0.035 [0.89]
2 x
0.024 [0.60]
0.020 [0.51]
4 x
E min.
E max.
0.100 [2.54] typ.
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
8.38
A
E
L
0.310
0.300
0.270
0.330
0.425
0.290
7.87
7.62
6.86
10.79
7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
Note
1. Package
length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
Document Number: 91361
Revision: 06-Sep-10
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
