Vishay-Intertech-SI1016X-T1-GE3
| Part # | Vishay-Intertech-SI1016X-T1-GE3 |
Download  | Vishay-Intertech-SI1016X-T1-GE3 |
Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
V
DS
(V)
R
DS(on)
(
)
I
D
(mA)
600
0.70 at V
GS
= 4.5 V
0.85 at V
GS
= 2.5 V
1.25 at V
GS
= 1.8 V
1.2 at V
GS
= – 4.5 V
1.6 at V
GS
= – 2.5 V
2.7 at V
GS
= – 1.8 V
•
•
•
•
•
TrenchFET
®
Power MOSFETs
2000 V ESD Protection
Very Small Footprint
500
N-Channel
P-Channel
20
350
High-Side Switching
Low On-Resistance:
– 400
– 300
– 150
– 20
N-Channel, 0.7
P-Channel, 1.2
•
•
•
•
Low Threshold:
0.8 V (Typ.)
Fast Switching Speed: 14 ns
1.8 V Operation
Compliant to RoHS Directive 2002/95/EC
BENEFITS
SOT-563
•
•
•
•
•
Ease in Driving Switches
SC-89
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
S
1
2
3
6
5
4
D
1
1
Low Battery Voltage Operation
G
1
G
2
Marking Code: A
APPLICATIONS
•
•
•
Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
D
2
S
2
T
o
p View
Ordering Information:
Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
N-Channel
P-Channel
Steady State
Parameter
Symbol
5 s
Steady State
20
5 s
Unit
V
DS
– 20
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
6
T
A
= 25 °C
T
A
= 85 °C
515
370
485
350
– 390
– 280
– 370
– 265
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
b
I
D
mA
I
DM
I
S
650
– 650
Continuous Source Current (Diode Conduction)
a
T
A
= 25 °C
A
= 85 °C
450
280
145
380
250
130
– 450
280
– 380
250
Maximum Power Dissipation
a
mW
P
D
T
145
130
T
J
, T
stg
ESD
– 55 to 150
2000
°C
V
Operating Junction and Storage
T
e
mperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
1
Si1016X
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
= V
GS,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
0.45
1
N-Ch
V
GS(th)
Gate Threshold Voltage
Gate Body Leakage
V
– 0.45
– 1
P-Ch
N-Ch
P-Ch
N-Ch
0.5
1.0
1.0
2.0
I
GSS
V
DS
= 0
V
,
V
GS
=
4.5 V
µA
nA
V
DS
= 16
V
,
V
GS
= 0 V
0.3
100
V
DS
= – 16
V
,
V
GS
= 0 V
– 0.3
– 100
5
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Zero Gate Voltage Drain
Current
I
DSS
V
DS
= 16
V
,
V
GS
= 0
V
,
T
J
= 85 °C
µA
V
DS
= – 16
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
= 5
V
,
V
GS
= 4.5 V
– 5
700
On State Drain Current
a
mA
I
D(on)
V
DS
= – 5
V
,
V
GS
= – 4.5 V
V
GS
= 4.5
V
,
I
D
= 600 mA
GS
= – 4.5
V
,
I
D
= – 350 mA
GS
= 2.5
V
,
I
D
= 500 mA
GS
= – 2.5
V
,
I
D
= – 300 mA
GS
= 1.8
V
,
I
D
= 350 mA
GS
= – 1.8
V
,
I
D
= – 150 mA
V
DS
= 10
V
,
I
D
= 400 mA
– 700
0.41
0.80
0.53
1.20
0.70
1.80
1.0
0.70
1.2
V
V
0.85
1.6
Drain-Source On-State
Resistance
a
R
DS(on)
V
V
1.25
2.7
V
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
S
V
g
fs
V
DS
= – 10
V
,
I
D
= – 250 mA
I
S
= 150 mA, V
GS
= 0 V
0.4
0.8
1.2
V
SD
I
S
= – 150 mA, V
GS
= 0 V
– 0.8
– 1.2
Dynamic
b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
750
1500
75
Q
g
Q
gs
Q
gd
t
ON
T
o
tal Gate Charge
N-Channel
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 250 mA
P-Channel
V
Gate-Source Charge
Gate-Drain Charge
T
u
rn-On Time
pC
ns
150
225
450
5
V
DS
= – 10
V
,
V
GS
= – 4.5
V
,
I
D
= – 250 mA
N-Channel
DD
= 10
V
,
R
L
= 47
I
D
200 mA, V
GEN
= 4.5
V
,
R
g
= 10
P-Channel
DD
= – 10
V
,
R
L
= 47
I
D
– 200 mA, V
GEN
= – 4.5
V
,
R
g
= 10
V
5
N-Ch
P-Ch
25
35
t
OFF
T
u
rn-Off Time
V
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
Si1016X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1.0
1200
V
= 5 V thru 1.8 V
GS
T
= – 55 °C
C
1000
800
600
400
200
0
0.8
0.6
0.4
0.2
0.0
25 °C
125 °C
1 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
V
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
100
80
60
40
20
0
4.0
3.2
2.4
1.6
0.8
0.0
V
= 0 V
GS
f = 1 MHz
C
iss
V
GS
= 1.8 V
C
oss
V
= 2.5 V
GS
C
rss
V
= 4.5 V
GS
0
4
8
12
16
20
0
200
400
600
800
1000
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (mA)
Capacitance
On-Resistance vs. Drain Current
1.60
1.40
1.20
1.00
0.80
0.60
5
V
= 10 V
= 250 mA
DS
I
D
4
3
2
1
0
V
= 4.5 V
= 350 mA
GS
I
D
V
= 1.8 V
GS
= 150 mA
I
D
0.0
0.2
Q
0.4
0.6
0.8
– 50
– 25
0
25
50
75
100
125
T
J
– Junction
T
e
mperature (°C)
–
T
o
tal Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
3
Si1016X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
5
1000
T
J
= 125 °C
4
3
2
1
0
I
D
= 350
mA
100
10
T
J
= 25 °C
I
D
= 200
mA
T
J
= 50 °C
1
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.3
0.2
I
D
= 0.25 mA
0.1
0.0
– 0.1
– 0.2
– 0.3
V
= 4.5 V
GS
– 50
– 25
0
25
50
75
100
125
– 50
– 25
0
25
50
75
100
125
T
J
–
T
e
mperature (°C)
T
J
–
T
e
mperature (°C)
Threshold Voltage Variance vs. Temperature
I
GSS
vs. Temperature
7
6
5
4
3
2
1
0
– 50
– 25
0
25
50
75
100
125
T
J
–
T
e
mperature (°C)
BV
GSS
vs. Temperature
4
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
Si1016X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1.0
1000
800
600
400
200
0
V
= 5 V thru 3 V
T =
– 55 °C
J
GS
2.5 V
0.8
25 °C
0.6
0.4
0.2
0.0
125 °C
2 V
1.8 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
120
100
80
60
40
20
0
4.0
3.2
2.4
1.6
0.8
0.0
V
= 0 V
GS
f = 1 MHz
V
GS
= 1.8 V
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
200
400
600
800
1000
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (mA)
Capacitance
On-Resistance vs. Drain Current
5
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 250 mA
DS
I
D
4
3
2
1
0
V
= 4.5 V
= 350 mA
GS
I
D
V
= 1.8 V
= 150 mA
GS
I
D
0.0
0.2
0.4
Q
0.6
0.8
1.0
1.2
1.4
1.6
– 50
– 25
0
25
50
75
100
125
–
T
o
tal Gate Charge (nC)
g
T –
Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
5
Si1016X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
5
1000
T
J
= 125 °C
4
3
2
1
0
100
10
T
J
= 25 °C
I
D
= 350
mA
T
J
= – 55 °C
I
D
= 200
mA
1
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.3
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 0.25 mA
0.1
V
GS
= 4.5 V
0.0
– 0.1
– 0.2
– 0.3
– 50
– 25
0
25
50
75
100
125
– 50
– 25
0
25
–
T
e
mperature (°C)
J
50
75
100
125
T –
T
e
mperature (°C)
T
J
Threshold Voltage Variance vs. Temperature
I
GSS
vs. Temperature
7
6
5
4
3
2
1
0
– 50
– 25
0
25
50
75
100
125
T –
T
e
mperature (°C)
J
BV
GSS
vs. Temperature
6
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
Si1016X
Vishay Siliconix
N- OR P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 500 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
1
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
7
Package Information
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
2
3
aaa
C
D
4
e1
2x
4
A
B
D
6
5
4
S
ECTION B-B
C
6
E/2
E
2
3
E1
2x
DETAIL “A”
aaa
C
2x
D
1
2
3
5
bbb
C
e
6x b
B
4
ddd
M
C
A–B
L1
A1
L
A
A1
S
EE DETAIL “A”
Notes
1. Dimensions in millimeters.
MILLIMETERS
NOM.
0.58
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
DIM.
MIN.
0.56
0
MAX.
0.60
0.10
0.30
0.18
1.70
1.70
1.25
0.55
1.05
0.50
0.30
A
A1
b
0.02
0.15
0.10
1.50
1.50
1.15
0.45
0.95
0.25
0.10
0.22
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
c
0.14
D
1.60
E
1.60
E1
e
1.20
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
0.50
e1
L
1.00
0.35
L1
0.20
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Revision: 11-Aug-14
Document Number: 71612
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
