Vishay-Intertech-SI1023CX-T1-GE3
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Si1023CX
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
– 0.35
– 0.35
– 0.1
Q
g
(Typ.)
Definition
•
•
•
•
T
r
enchFET
®
Power MOSFET
100 % R
g
T
e
sted
0.756 at V
GS
= – 4.5 V
1.038 at V
GS
= – 2.5 V
1.44 at V
GS
= – 1.8 V
2.4 at V
GS
= – 1.5 V
– 20
1 nC
Typical ESD protection: 1000 V (HBM)
Fast Switching Speed
– 0.05
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
•
Load and Small Signal Switch for Portable Devices
Drivers: Relays, Solenoids, Displays, Lamps
Battery Operated Systems
Smart Phones, Tablet PCs
SC-89 (6-LEADS)
S
1
S
2
S
1
2
3
6
5
4
D
1
1
Marking Code
7
XX
G
D
G
2
1
Lot Tracea
b
ility
and Date Code
G
1
G
2
Part # Code
S
2
2
T
o
p
V
ie
w
D
1
D
2
D
u
al P-Channel MOSFET
Orderin
g
Information
:
Si1023CX-T1-GE3 (Lead (P
b
)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 20
8
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
– 0.45
b, c
– 0.36
b, c
– 1.5
T
A
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current (t = 300 µs)
– 0.18
b, c
0.22
b, c
T
A
= 25 °C
T
A
= 25 °C
T
A
= 70 °C
Continuous Source-Drain Diode Current
P
D
Maximum Power Dissipation
W
0.14
b, c
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
5 s
470
565
Maximum Junction-to-Ambient
a, b
R
thJA
°C/W
Steady State
State
560
675
Notes:
a. Maximum under steady state conditions is 675 °C/W.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 5 s.
Document Number: 63303
S11-1384-Rev. A, 11-Jul-11
1
This document is subject to change without notice.
Si1023CX
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
V
GS(th)
T
e
mperature Coefficient
– 20
V
mV/°C
V
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
– 12
1.8
V
DS
= V
GS
, I
D
= – 250 µA
Gate-Source Threshold Voltage
– 0.4
– 1
30
1
V
DS
= 0
V
,
V
GS
V
DS
= 0
V
,
V
GS
=
8 V
I
GSS
Gate-Source Leakage
=
4.5 V
µA
A
V
DS
= – 20
V
,
V
GS
= 0 V
V
DS
= – 20
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
=
5
V
,
V
GS
= – 4.5 V
V
GS
= – 4.5
V
,
I
D
= – 0.35 A
V
GS
= – 2.5
V
,
I
D
= – 0.35 A
V
GS
= – 1.8
V
,
I
D
= – 0.1 A
V
GS
= – 1.5
V
,
I
D
= – 0.05 A
V
DS
= – 10
V
,
I
D
= – 0.4 A
– 1
– 10
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
D(on)
– 1.5
0.630
0.865
1.20
1.6
0.756
1.038
1.44
2.4
Drain-Source On-State Resistance
a
R
DS(on)
S
g
fs
Forward
T
r
ansconductance
1
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
45
15
10
1.65
1
V
DS
= – 10
V
,
V
GS
= 0
V
, f = 1
M
Hz
DS
= – 10
V
,
V
GS
= – 4.5
V
,
I
D
= – 0.4 A
DS
= – 10
V
,
V
GS
= – 2.5
V
,
I
D
= – 0.4 A
f = 1 MHz
pF
V
V
2.50
2
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
0.2
0.26
12
9
2.4
24
18
20
20
16
2
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
10
10
8
V
DD
= – 10
V
,
R
L
= 33.3
I
D
– 0.3 A, V
GEN
= – 4.5
V
,
R
g
= 1
T
u
rn-Off DelayTime
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
1
8
16
18
10
V
DD
= – 10
V
,
R
L
= 33.3
I
D
– 0.3 A, V
GEN
= – 8
V
,
R
g
= 1
T
u
rn-Off DelayTime
Fall Time
9
5
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
I
SM
V
SD
t
rr
– 1.5
– 1.2
24
A
V
I
S
= – 0.3 A
Body Diode Voltage
– 0.8
16
8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
16
I
F
= – 0.3 A, dI/dt = 100 A/µs
11
5
ns
t
b
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 63303
S11-1384-Rev. A, 11-Jul-11
This document is subject to change without notice.
Si1023CX
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-4
0.010
0.008
10
-5
T
J
= 150
°
C
0.006
0.004
0.002
0.000
10
-6
10
-7
10
-8
T
J
= 25
°
C
T
J
= 25
°
C
0
3
6
9
12
0
3
6
9
12
15
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
0.8
0.6
0.4
0.2
0
1.5
1.2
0.9
0.6
0.3
0
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
V
GS
= 2 V
T
C
= 25 °C
V
GS
= 1.5 V
T
C
= 125 °C
T
C
= – 55 °C
1.6
0
0.4
0.8
1.2
2
0
0.5
1
1.5
2
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
1.5
1
90
72
54
36
18
0
V
GS
= 1.8 V
V
GS
= 1.5 V
V
GS
= 2.5 V
C
iss
0.5
0
V
GS
= 4.5 V
C
oss
C
rss
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Document Number: 63303
S11-1384-Rev. A, 11-Jul-11
3
This document is subject to change without notice.
Si1023CX
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
4
2
0
1.5
1.3
1.1
0.9
0.7
I
D
= 0.35 A
V
GS
= 2.5 V
I
D
= 0.4 A
V
DS
= 5 V
V
GS
= 4.5 V
V
DS
= 10 V
V
DS
= 16 V
0
0.45
0.9
1.35
1.8
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction Temperature (
°
C)
Q
g
– Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.2
1.0
0.8
0.6
0.4
I
D
= 0.35 A
T
J
= 150
°
C
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 25
°
C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
1
2
3
4
5
6
7
8
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.7
0.6
0.5
0.4
0.3
2.7
2.25
1.8
I
D
= 250 μA
1.35
0.9
0.45
0
0.01
0.1
1
10
100
– 50
– 25
0
25
50
75
100 125 150
Time (s)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
4
Document Number: 63303
S11-1384-Rev. A, 11-Jul-11
This document is subject to change without notice.
Si1023CX
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.24
0.18
0.12
0.06
0
10
Limited by R
DS(on)
*
1
100 μs
1 ms
10 ms
0.1
100 ms
1 s
10 s, DC
0.01
BVDSS Limited
10
T
C
= 25
°
C
Single Pulse
0.001
0.1
1
100
0
25
50
75
100
125
150
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
T
A
– Ambient Temperature (
°
C)
Safe Operating Area, Junction-to-Ambient
Power Derating, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 675 °C/
W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
4. S
u
rface Mo
u
nted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 63303
S11-1384-Rev. A, 11-Jul-11
5
This document is subject to change without notice.
Package Information
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
2
3
aaa
C
D
4
e1
2x
4
A
B
D
6
5
4
S
ECTION B-B
C
6
E/2
E
2
3
E1
2x
DETAIL “A”
aaa
C
2x
D
1
2
3
5
bbb
C
e
6x b
B
4
ddd
M
C
A–B
L1
A1
L
A
A1
S
EE DETAIL “A”
Notes
1. Dimensions in millimeters.
MILLIMETERS
NOM.
0.58
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
DIM.
MIN.
0.56
0
MAX.
0.60
0.10
0.30
0.18
1.70
1.70
1.25
0.55
1.05
0.50
0.30
A
A1
b
0.02
0.15
0.10
1.50
1.50
1.15
0.45
0.95
0.25
0.10
0.22
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
c
0.14
D
1.60
E
1.60
E1
e
1.20
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
0.50
e1
L
1.00
0.35
L1
0.20
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Revision: 11-Aug-14
Document Number: 71612
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
