Vishay-Intertech-SI1025X-T1-GE3
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Si1025X
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS (min)
(V)
R
DS(on)
(
)
V
GS(th)
(V)
I
D
(mA)
Definition
TrenchFET
®
Power MOSFETs
High-Side Switching
Low On-Resistance: 4
Low Threshold: – 2 V (typ.)
Fast Switching Speed: 20 ns (typ.)
Low Input Capacitance: 23 pF (typ.)
Miniature Package
Gate-Source ESD Protected: 2000 V
Compliant to RoHS Directive 2002/95/EC
4 at V
GS
= – 10 V
– 60
– 1 to – 3.0
– 500
•
•
•
•
•
•
•
•
•
SC-89
BENEFITS
S
1
2
3
6
5
4
D
1
1
•
•
•
•
•
•
Ease in Driving Switches
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven Without Buffer
Small Board Area
G
D
G
2
Markin
g
Code: D
1
S
2
2
T
o
p
V
ie
w
APPLICATIONS
Orderin
g
Information:
Si1025X-T1-GE3 (Lead (P
b
)-free and Halogen-free)
•
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors etc.
•
•
•
Battery Operated Systems
Power Supply Converter Circuits
Solid State Relays
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
5 s
Steady State
– 60
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
A
= 25 °C
– 200
– 145
– 190
– 135
Continuous Drain Current (T
J
= 150 °C)
a
I
D
T
A
= 85 °C
mA
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
– 650
– 450
280
– 380
250
T
A
= 25 °C
Maximum Power Dissipation
a
P
D
mW
T
A
= 85 °C
145
130
T
J
, T
stg
ESD
Operating Junction and Storage
T
e
mperature Range
Gate-Source ESD Rating (HBM, Method 3015)
– 55 to 150
2000
°C
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
1
Si1025X
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
GS
= 0 V, I
D
= – 10 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
– 60
– 1
V
V
GS(th)
V
DS
= V
GS
, I
D
= – 0.25 mA
– 3.0
200
V
DS
= 0
V
,
V
GS
V
DS
= 0
V
,
V
GS
=
10 V
5 V
I
GSS
I
DSS
I
D(on)
Gate-Body Leakage
=
100
nA
V
DS
= – 50
V
,
V
GS
= 0 V
V
DS
= – 50
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
= – 10
V
,
V
GS
= – 4.5 V
V
DS
= – 10
V
,
V
GS
= – 10 V
V
GS
= – 4.5
V
,
I
D
= – 25 mA
– 25
Zero Gate Voltage Drain Current
On-State Drain Current
a
– 250
– 50
mA
– 600
8
4
6
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= – 10
V
,
I
D
= – 500 mA
V
GS
= – 10
V
,
I
D
= – 500 mA, T
J
= 125 °C
V
DS
= – 10
V
,
I
D
= – 100 mA
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
g
fs
100
mS
V
V
SD
I
S
= – 200 mA, V
GS
= 0 V
– 1.4
Dynamic
b
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
o
tal Gate Charge
1.7
0.26
0.46
23
V
DS
= – 30
V
,
V
GS
= – 15
V
,
I
D
– 500 mA
Gate-Source Charge
Gate-Drain Charge
nC
pF
Input Capacitance
V
DS
= – 25
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
Reverse
T
r
ansfer Capacitance
10
5
Switching
b, c
t
ON
T
u
rn-On Time
V
DD
= – 25
V
,
R
L
= 150
, I
D
– 165 mA,
V
GEN
= – 10
V
,
R
g
= 10
20
35
ns
t
OFF
T
u
rn-Off Time
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. For DESIGN AID ON
L
Y,
n
ot subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1.0
0.
8
0.6
0.4
0.2
0.0
1200
900
600
300
0
V
= 10
V
GS
T =
– 55 °C
J
7
V
6
V
8 V
25 °C
125 °C
5
V
4
V
0
1
2
3
4
5
0
2
4
6
8
10
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
GS
DS
Output Characteristics
Transfer Characteristics
2
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
Si1025X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
20
16
12
8
40
32
24
16
8
V
= 0
V
GS
V
= 4.5
V
GS
C
iss
V
= 5
V
GS
C
oss
V
= 10
V
GS
4
C
rss
0
0
0
200
400
600
8
00
1000
0
5
10
15
20
25
I
– Drain C
u
rrent (mA)
D
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
On-Resistance vs. Drain Current
Capacitance
15
12
9
1.
8
1.5
1.2
0.9
0.6
0.3
0.0
I
D
= 500 mA
V
= 30
V
DS
V
= 10
V
at 500 mA
GS
V
= 4
8 V
DS
V
= 4.5
V
at 25 mA
GS
6
3
0
0.0
0.3
0.6
0.9
1.2
1.5
1.
8
– 50
– 25
0
25
50
75
100 125 150
T –
J
u
nction
T
e
mperat
u
re (°C)
J
Q –
T
o
tal Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1000
100
V
= 0
V
GS
I
D
= 500 mA
6
T =
125 °C
J
4
I
D
= 200 mA
10
1
T =
25 °C
J
2
T =
– 55 °C
J
0
0
2
4
6
8
10
0.00
0.3
0.6
So
u
rce-to-Drain
V
oltage (
V
)
–
0.9
1.2
1.5
V
– Gate-to-So
u
rce
V
oltage (
V
)
V
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
3
Si1025X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
0.5
0.4
I
D
= 250
µ
A
0.3
0.2
0.1
0.0
– 0.1
– 0.2
– 0.3
– 50
– 25
0
25
50
75
100 125 150
T –
J
u
nction
T
e
mperat
u
re (°C)
J
Threshold Voltage Variance Over Temperature
2
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 500 °C/
W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
4
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
Package Information
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
2
3
aaa
C
D
4
e1
2x
4
A
B
D
6
5
4
S
ECTION B-B
C
6
E/2
E
2
3
E1
2x
DETAIL “A”
aaa
C
2x
D
1
2
3
5
bbb
C
e
6x b
B
4
ddd
M
C
A–B
L1
A1
L
A
A1
S
EE DETAIL “A”
Notes
1. Dimensions in millimeters.
MILLIMETERS
NOM.
0.58
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
DIM.
MIN.
0.56
0
MAX.
0.60
0.10
0.30
0.18
1.70
1.70
1.25
0.55
1.05
0.50
0.30
A
A1
b
0.02
0.15
0.10
1.50
1.50
1.15
0.45
0.95
0.25
0.10
0.22
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
c
0.14
D
1.60
E
1.60
E1
e
1.20
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
0.50
e1
L
1.00
0.35
L1
0.20
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Revision: 11-Aug-14
Document Number: 71612
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
