Vishay-Intertech-SI1029X-T1-GE3
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Si1029X
Vishay Siliconix
Complementary N- and P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
V
DS
(V)
R
DS(on)
(
)
I
D
(mA)
500
1.40 at V
GS
= 10 V
3 at V
GS
= 4.5 V
4 at V
GS
= – 10 V
8 at V
GS
= – 4.5 V
•
•
•
•
TrenchFET
®
Power MOSFETs
Very Small Footprint
N-Channel
P-Channel
60
200
High-Side Switching
Low On-Resistance:
– 500
– 25
– 60
N-Channel, 1.40
P-Channel, 4
•
•
•
•
Low Threshold:
2 V (typ.)
Fast Switching Speed: 15 ns (typ.)
Gate-Source ESD Protected: 2000 V
Compliant to RoHS Directive 2002/95/EC
SC-89
S
1
1
2
3
6
5
4
D
1
Markin
g
Code: H
BENEFITS
G
D
G
2
1
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
S
2
2
T
o
p
V
ie
w
Orderin
g
Information:
Si1029X-T1-GE3 (Lead (P
b
)-free and Halogen-free)
APPLICATIONS
•
•
•
Replace Digital
T
r
ansistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
N-Channel
P-Channel
Steady State
Parameter
Symbol
5 s
Steady State
60
5 s
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
– 60
V
V
GS
20
T
A
= 25 °C
A
= 85 °C
320
230
305
220
– 200
– 145
– 190
– 135
Continuous Drain Current (T
J
= 150 °C)
a
I
D
T
mA
Pulsed Drain Current
b
I
DM
I
S
650
– 650
Continuous Source Current (Diode Conduction)
a
450
280
145
380
250
130
– 450
280
– 380
250
T
A
= 25 °C
Maximum Power Dissipation
a
P
D
mW
T
A
= 85 °C
145
130
T
J
, T
stg
ESD
Operating Junction and Storage
T
e
mperature Range
Gate-Source ESD Rating (HBM, Method 3015)
– 55 to 150
2000
°C
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
1
Si1029X
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS
= 0
V
,
I
D
= 10 µA
V
GS
= 0
V
,
I
D
= – 10 µA
V
DS
= V
GS
, I
D
= 250 µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
60
– 60
1
V
DS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
2.5
– 3.0
50
V
GS(th)
V
DS
= V
GS
, I
D
= – 250 µA
– 1
V
DS
= 0
V
,
V
GS
DS
= 0
V
,
V
GS
=
5 V
100
150
200
10
I
GSS
I
DSS
I
D(on)
Gate-Body Leakage
V
=
10 V
nA
V
DS
= 50
V
,
V
GS
= 0 V
V
DS
= – 50
V
,
V
GS
= 0 V
– 25
100
– 250
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
= 50
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
= – 50
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
= 10
V
,
V
GS
= 4.5 V
500
– 50
V
DS
= – 10
V
,
V
GS
= – 4.5 V
mA
V
DS
= 7.5
V
,
V
GS
= – 4.5 V
DS
= – 10
V
,
V
GS
= – 10 V
800
V
– 600
V
GS
= 4.5
V
,
I
D
= 200 mA
GS
= – 4.5
V
,
I
D
= – 25 mA
3
8
V
V
GS
= 10
V
,
I
D
= 500 mA
1.40
4
Drain-Source On-State
Resistance
a
R
DS(on)
V
GS
= – 10
V
,
I
D
= – 500 mA
V
GS
= 10
V
,
I
D
= 500 mA, T
J
= 125 °C
2.50
6
V
GS
= – 10
V
,
I
D
= – 500 mA, T
J
= 125 °C
V
DS
= 10
V
,
I
D
= 200 mA
200
100
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
g
fs
ms
V
V
DS
= – 10
V
,
I
D
= – 100 mA
I
S
= 200 mA, V
GS
= 0 V
1.4
V
SD
I
S
= – 200 mA, V
GS
= 0 V
– 1.4
Dynamic
b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
750
1700
75
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
o
tal Gate Charge
N-Channel
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 250 mA
P-Channel
Gate-Source Charge
Gate-Drain Charge
pC
pF
ns
260
225
460
30
V
DS
= – 30
V
,
V
GS
= – 15
V
,
I
D
= – 500 mA
Input Capacitance
N-Channel
DS
= 25
V
,
V
GS
= 0
V
, f = 1
M
Hz
23
V
6
Output Capacitance
Reverse
T
r
ansfer Capacitance
10
P-Channel
DS
= – 25
V
,
V
GS
= 0
V
, f = 1
M
Hz
3
V
5
N-Channel
V
DD
= 30
V
,
R
L
= 150
I
D
200 mA, V
GEN
= 10
V
,
R
g
= 10
N-Ch
P-Ch
N-Ch
P-Ch
15
20
20
35
T
u
rn-On Time
c
T
u
rn-Off Time
c
t
ON
P-Channel
DD
= – 25
V
,
R
L
= 150
I
D
– 165 mA, V
GEN
= – 10
V
,
R
g
= 10
V
t
OFF
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
Si1029X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1.0
0.
8
0.6
0.4
0.2
0.0
1200
900
600
300
0
6
V
5
V
T =
– 55 °C
J
V
= 10
V
thr
u
7
V
GS
25 °C
125 °C
4
V
3
V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
DS
Output Characteristics
Transfer Characteristics
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 0
V
GS
f = 1 MHz
V
= 4.5
V
GS
C
iss
V
= 10
V
GS
C
oss
C
rss
0
5
10
15
20
25
0
200
400
600
8
00
1000
I
– Drain C
u
rrent (mA)
D
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
On-Resistance vs. Drain Current
Capacitance
7
6
5
4
3
2
1
0
2.0
1.6
1.2
0.
8
0.4
0.0
V
= 10
V
= 250 mA
V
= 10
V
at 500 mA
GS
DS
I
D
V
= 4.5
V
GS
at 200 mA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
– 50
– 25
0
25
50
75
100 125 150
T –
J
u
nction
T
e
mperat
u
re (°C)
Q –
T
o
tal Gate Charge (nC)
g
J
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
3
Si1029X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1000
100
10
5
4
3
2
1
0
V
= 0
V
GS
T =
125 °C
J
I
D
= 500 mA
T =
25 °C
J
I
D
= 200 mA
T =
– 55 °C
J
1
0
2
4
6
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
– So
u
rce-to-Drain
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
SD
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
0.0
I
D
= 250
µ
A
– 0.2
– 0.4
– 0.6
– 0.
8
– 50
– 25
0
25
50
75
100 125 150
T –
J
u
nction
T
e
mperat
u
re (°C)
J
Threshold Voltage Variance Over Temperature
4
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
Si1029X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1.0
0.
8
0.6
0.4
0.2
0.0
1200
900
600
300
0
V
= 10
V
GS
T =
– 55 °C
J
7
V
6
V
8 V
25 °C
125 °C
5
V
4
V
0
1
2
3
4
5
0
2
4
6
8
10
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
DS
Output Characteristics
Transfer Characteristics
40
32
24
16
8
20
16
12
8
V
= 0
V
GS
V
= 4.5
V
GS
C
iss
V
= 5
V
GS
C
oss
V
= 10
V
GS
4
C
rss
0
0
0
5
10
15
20
25
0
200
400
600
8
00
1000
I
– Drain C
u
rrent (mA)
V
– Drain-to-So
u
rce
V
oltage (
V
)
D
DS
On-Resistance vs. Drain Current
Capacitance
15
12
9
1.
8
1.5
1.2
0.9
0.6
0.3
0.0
I
D
= 500 mA
V
= 30
V
V
= 10
V
at 500 mA
DS
GS
V
= 4
8 V
DS
V
= 4.5
V
at 25 mA
GS
6
3
0
0.0
0.3
0.6
0.9
1.2
1.5
1.
8
– 50
– 25
0
25
T –
J
u
nction
T
e
mperat
u
re (°C)
J
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
5
Si1029X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1000
10
V
= 0
V
GS
8
I
D
= 500 mA
100
6
T =
125 °C
J
4
I
D
= 200 mA
10
1
T =
25 °C
J
2
T =
– 55 °C
J
0
0
2
4
6
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
I
D
= 250
µ
A
0.3
0.2
0.1
0.0
– 0.1
– 0.2
– 0.3
– 50
– 25
0
25
50
75
100 125 150
T –
J
u
nction
T
e
mperat
u
re (°C)
J
Threshold Voltage Variance Over Temperature
6
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
Si1029X
Vishay Siliconix
N- OR P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.05
0.02
N
otes:
P
DM
0.1
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 500 °C/
W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
7
Package Information
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
2
3
aaa
C
D
4
e1
2x
4
A
B
D
6
5
4
S
ECTION B-B
C
6
E/2
E
2
3
E1
2x
DETAIL “A”
aaa
C
2x
D
1
2
3
5
bbb
C
e
6x b
B
4
ddd
M
C
A–B
L1
A1
L
A
A1
S
EE DETAIL “A”
Notes
1. Dimensions in millimeters.
MILLIMETERS
NOM.
0.58
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
DIM.
MIN.
0.56
0
MAX.
0.60
0.10
0.30
0.18
1.70
1.70
1.25
0.55
1.05
0.50
0.30
A
A1
b
0.02
0.15
0.10
1.50
1.50
1.15
0.45
0.95
0.25
0.10
0.22
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
c
0.14
D
1.60
E
1.60
E1
e
1.20
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
0.50
e1
L
1.00
0.35
L1
0.20
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Revision: 11-Aug-14
Document Number: 71612
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
