Vishay-Intertech-SI1032X-T1-GE3
| Part # | Vishay-Intertech-SI1032X-T1-GE3 |
Download  | Vishay-Intertech-SI1032X-T1-GE3 |
Si1032R/X
Vishay Siliconix
N-Channel 1.5 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(mA)
200
Definition
5 at V
GS
= 4.5 V
7 at V
GS
= 2.5 V
9 at V
GS
= 1.8 V
10 at V
GS
= 1.5 V
•
•
•
•
•
•
•
Low-Side Switching
Low On-Resistance: 5
Low Threshold: 0.9 V (typ.)
Fast Switching Speed: 35 ns
T
r
enchFET
®
Power MOSFETs: 1.5 V Rated
2000 V ESD Protection
175
20
150
50
Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
•
Ease in Driving Switches
SC-75A or SC-89
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
G
S
1
Low Battery Voltage Operation
3
D
APPLICATIONS
•
2
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Markin
g
Code: G
Top
V
ie
w
Orderin
g
Information:
Si1032R-T1-GE3 (SC-75A, Lead (P
b
)-free and Halogen-free)
Si1032X-T1-GE3 (SC-
8
9, Lead (P
b
)-free -free Halogen-free)
•
•
•
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Si1032R
Si1032X
Stead
y
S
tate
Parameter
Symbol
V
DS
Unit
5 s
Stead
y
S
tate
20
5 s
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
ꢀ
T
A
= 25 °C
T
A
= 85 °C
200
110
140
100
210
150
200
140
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
a
I
D
mA
I
DM
I
S
500
ꢀ00
Continuous Source Current (Diode Conduction)
a
250
280
145
200
250
130
300
340
170
240
300
150
T
A
= 25 °C
Maximum Power Dissipation
a
for SC-75
P
D
mW
T
A
= 85 °C
T
J
, T
stg
ESD
Operating Junction and Storage
T
e
mperature Range
Gate-Source ESD Rating (HBM, Method 3015)
– 55 to 150
2000
°C
V
Notes:
a. Surface mounted on FR4 board.
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
1
Si1032R/X
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
Gate Threshold Voltage
0.40
0.7
0.5
1.0
1.2
1.0
3.0
1
V
V
DS
= 0
V
,
V
GS
DS
= 0
V
,
V
GS
=
=
2.8 V
4.5 V
Gate-Body Leakage
V
µA
mA
V
DS
= 20
V
,
V
GS
= 0 V
DS
= 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
= 5
V
,
V
GS
= 4.5 V
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
10
I
D(on)
250
V
GS
= 4.5
V
,
I
D
= 200 mA
5
7
V
V
GS
= 2.5
V
,
I
D
= 175 mA
GS
= 1.8
V
,
I
D
= 150 mA
Drain-Source On-State Resistance
a
R
DS(on)
9
V
GS
= 1.5
V
,
I
D
= 40 mA
10
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
0.5
S
V
g
fs
V
DS
= 10
V
,
I
D
= 200 mA
I
S
= 150 mA, V
GS
= 0 V
V
SD
1.2
Q
g
Q
gs
Q
gd
t
d(on)
t
r
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
T
u
rn-On Delay Time
Rise Time
750
75
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 250 mA
pC
ns
225
50
25
50
25
V
DD
= 10
V
,
R
L
= 47
I
D
200 mA, V
GEN
= 4.5
V
,
R
g
= 10
t
d(off)
t
f
T
u
rn-Off Delay Time
Fall Time
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
0.5
0.4
0.3
0.2
0.1
0.0
ꢀ00
500
400
300
200
100
0
T
= – 55 °C
J
V
GS
= 5
V
thr
u
1.
8 V
25 °C
125 °C
1
V
0
1
2
3
4
5
ꢀ
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Transfer Characteristics
Output Characteristics
2
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
50
40
30
20
10
0
100
8
0
ꢀ0
40
20
0
V
= 0
V
GS
f = 1 MHz
C
iss
V
GS
= 1.
8 V
C
oss
V
= 2.5
V
GS
C
rss
V
= 4.5
V
GS
0
50
100
150
200
250
0
4
8
12
1ꢀ
20
V
DS
I
D
– Drain C
u
rrent (mA)
– Drain-to-So
u
rce
V
oltage (
V
)
Capacitance
On-Resistance vs. Drain Current
5
4
3
2
1
0
1.ꢀ0
1.40
1.20
1.00
0.
8
0
0.ꢀ0
V
D
= 10
V
DS
= 150 mA
I
V
D
= 4.5
V
GS
= 200 mA
I
V
D
= 1.
8 V
GS
= 175 mA
I
0.0
0.2
0.4
0.ꢀ
0.
8
– 50
– 25
0
25
50
75
100
125
Q
– Total Gate Charge (nC)
g
T –
J
u
nction
T
e
mperat
u
re (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
50
1000
T
= 125 °C
J
40
30
20
10
0
I
D
= 200
mA
100
10
T
= 25 °C
J
T
= 50 °C
J
I
D
= 175
mA
1
0.0
0.2
0.4
0.ꢀ
0.
8
1.0
1.2
1.4
0
1
2
3
4
5
ꢀ
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Surge-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
3
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
0.3
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 0.25 mA
0.1
0.0
– 0.1
– 0.2
– 0.3
V
GS
= 2.
8 V
– 50
– 25
0
25
50
75
100
125
– 50
– 25
0
25
T –
T
e
mperat
u
re (°C)
J
50
75
100
125
T
–
T
e
mperat
u
re (°C)
J
Threshold Voltage Variance vs. Temperature
I
GSS
vs. Temperature
7
ꢀ
5
4
3
2
1
0
– 50
– 25
0
25
50
75
100
125
T
–
T
e
mperat
u
re (°C)
J
BV
GSS
vs. Temperature
2
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 500 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
– 4
– 3
– 2
– 1
10
10
10
10
1
10
100
ꢀ00
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
4
Document Number: 71172
S10-2544-Rev. F, 08-Nov-10
Package Information
Vishay Siliconix
SC-75A: 3 Leads
L2
D
b b b
1
2
D
e2
2X
D
3
B1(b1)
3
e1
3
E/2
1
2
E
E1
1
1
1
2
b b b
C
2X
bbb
C
2X
3
4
e3
B1
b1
2XB1
M
ddd
C
A –
B
D
With Tin Planting
Base Metal
c1
5
Section B-B
b b b
C
4X
Seating Plane
D
DWG: 5868
Notes
MILLIMETERS
DIM.
NOTE
Dimensions in millimeters will govern.
MIN.
–
NOM.
MAX.
0.80
0.10
0.80
0.24
0.21
0.15
0.12
1.68
1.70
0.86
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
A
A1
A2
B1
b1
c
–
0.00
0.65
0.19
0.17
0.13
0.10
1.48
1.50
0.66
–
0.70
–
5
–
–
5
5
c1
D
–
1.575
1.60
1, 2
E
E1
e1
e2
e3
L
0.76
1, 2
DIMENSIONS
TOLERANCES
0.50 BSC
1.00 BSC
0.50 BSC
0.205
0.40 ref.
0.15 BSC
–
aaa
bbb
ccc
ddd
0.10
0.10
0.10
0.10
0.15
0.30
L1
L2
q
0°
4°
8°
q1
–
10°
C15-1445-Rev.
F
,
2
3-Nov-15
Document Number: 71348
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
