Vishay-Intertech-SI1035X-T1-GE3
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Si1035X
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
V
DS
(V)
R
DS(on)
(
)
I
D
(mA)
200
5 at V
GS
= 4.5 V
7 at V
GS
= 2.5 V
9 at V
GS
= 1.8 V
10 at V
GS
= 1.5 V
8 at V
GS
= – 4.5 V
12 at V
GS
= – 2.5 V
15 at V
GS
= – 1.8 V
20 at V
GS
= – 1.5 V
•
•
•
•
TrenchFET
®
Power MOSFET: 1.5 V Rated
Very Small Footprint
175
N-Channel
P-Channel
20
High-Side Switching
150
Low On-Resistance:
N-Channel, 5
P-Channel, 8
50
– 150
– 125
– 100
– 30
•
•
•
•
•
Low Threshold:
0.9 V (typ.)
Fast Switching Speed: 45 ns (typ.)
1.5 V Operation
– 20
Gate-Source ESD Protected: 2000 V
Compliant to RoHS Directive 2002/95/EC
BENEFITS
SC-89
•
•
•
•
•
Ease in Driving Switches
S
1
1
2
3
6
5
4
D
1
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
G
G
2
1
Markin
g
Code: M
Low Battery Voltage Operation
D
S
2
2
APPLICATIONS
T
o
p
V
ie
w
Orderin
g
Information:
Si1035X-T1-GE3 (Lead (P
b
)-free and Halogen-free)
•
•
•
•
Replace Digital
T
r
ansistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
N-Channel
P-Channel
Steady State
Parameter
Symbol
5 s
Steady State
20
5 s
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
– 20
V
V
GS
5
T
A
= 25 °C
T
A
= 85 °C
190
140
180
130
– 155
– 110
– 145
– 105
Continuous Drain Current (T
J
= 150 °C)
a
I
D
mA
Pulsed Drain Current
b
I
DM
I
S
650
– 650
Continuous Source Current (Diode Conduction)
450
280
145
380
250
130
– 450
280
– 380
250
T
A
= 25 °C
A
= 85 °C
Maximum Power Dissipation
a
P
D
mW
T
145
130
T
J
, T
stg
ESD
Operating Junction and Storage
T
e
mperature Range
Gate-Source ESD Rating (HBM, Method 3015)
– 55 to 150
2000
°C
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
1
Si1035X
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
= V
GS
, I
D
= 250 µA
N-Ch
0.40
V
GS(th)
Gate Threshold Voltage
Gate-Body Leakage
V
V
DS
= V
GS
, I
D
= – 250 µA
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
– 0.40
0.5
0.5
1.5
1.0
1
1.0
1.0
V
DS
= 0
V
,
V
GS
DS
= 0
V
,
V
GS
=
=
2.8 V
4.5 V
I
GSS
µA
3.0
V
3.0
V
DS
= 16
V
,
V
GS
= 0 V
500
nA
µA
V
DS
= – 16
V
,
V
GS
= 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
– 1
– 500
10
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
= 16
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
= – 16
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
= 5
V
,
V
GS
= 4.5 V
– 10
250
I
D(on)
mA
V
DS
= – 5
V
,
V
GS
= – 4.5 V
V
GS
= 4.5
V
,
I
D
= 200 mA
GS
= – 4.5
V
,
I
D
= – 150 mA
GS
= 2.5
V
,
I
D
= 175 mA
GS
= – 2.5
V
,
I
D
= 125 mA
GS
= 1.8
V
,
I
D
= 150 mA
GS
= – 1.8
V
,
I
D
= – 100 mA
DS
= 1.5
V
,
I
D
= 40 mA
DS
= – 1.5
V
,
I
D
= – 30 mA
V
DS
= 10
V
,
I
D
= 200 mA
– 200
5
8
V
V
7
V
12
9
Drain-Source On-State
Resistance
a
R
DS(on)
V
V
15
10
20
V
V
0.5
0.4
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
g
fs
S
V
V
DS
= – 10
V
,
I
D
= – 150 mA
I
S
= 150 mA, V
GS
= 0 V
1.2
V
SD
I
S
= – 150 mA, V
GS
= 0 V
– 1.2
Dynamic
b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
750
1500
75
Q
g
Q
gs
Q
gd
T
o
tal Gate Charge
N-Channel
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 150 mA
P-Channel
Gate-Source Charge
Gate-Drain Charge
pC
150
225
450
V
DS
= – 10
V
,
V
GS
= – 4.5
V
,
I
D
= – 150 mA
N-Channel
DD
= 10
V
,
R
L
= 47
I
D
250 mA, V
GEN
= 4.5
V
,
R
g
= 10
N-Ch
P-Ch
N-Ch
75
80
75
90
V
t
ON
T
u
rn-On Time
T
u
rn-Off Time
ns
P-Channel
DD
= – 10
V
,
R
L
= 65
I
D
– 150 mA, V
GEN
= – 4.5
V
,
R
g
= 10
P-Ch
V
t
OFF
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Si1035X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
0.5
0.4
0.3
0.2
0.1
0.0
600
500
400
300
200
100
0
T =
– 55 °C
J
V
= 5
V
thr
u
1.
8 V
GS
25 °C
125 °C
1
V
0
1
2
3
4
5
6
0.0
0.5
GS
1.0
1.5
2.0
2.5
V
– Gate-to-So
u
rce
V
oltage (
V
)
V
– Drain-to-So
u
rce
V
oltage (
V
)
GS
DS
Output Characteristics
Transfer Characteristics
100
8
0
60
40
20
0
40
V
= 0
V
f = 1 MHz
30
20
10
0
C
iss
V
= 1.
8 V
GS
C
oss
V
= 2.5
V
GS
V
= 4.5
V
GS
C
rss
0
4
8
12
16
20
0
50
100
150
200
250
V
– Drain-to-So
u
rce
V
oltage (
V
)
I
– Drain C
u
rrent (mA)
DS
D
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.
8
0.6
V
= 10
V
= 150 mA
DS
I
D
V
= 4.5
V
= 200 mA
GS
I
D
V
= 1.
8 V
= 175 mA
GS
I
D
0.0
0.2
Q
0.4
0.6
0.
8
– 50
– 25
0
25
50
75
100
125
–
T
o
tal Gate Charge (nC)
g
T –
J
u
nction
T
e
mperat
u
re (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
3
Si1035X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
50
40
30
20
10
0
1000
I
= 200 mA
T =
125 °C
D
J
100
10
1
I
= 175 mA
D
T =
25 °C
J
T =
50 °C
J
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
1.4
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
SD
–
S
o
u
rce-to-Drain
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.3
0.2
I
D
= 0.25 mA
0.1
0.0
– 0.1
– 0.2
– 0.3
V
= 2.
8 V
GS
– 50
– 25
0
25
50
75
100
125
– 50
– 25
0
25
50
75
100
125
T –
T
e
mperat
u
re (°C)
J
T –
T
e
mperat
u
re (°C)
J
Threshold Voltage Variance vs. Temperature
I
GSS
vs. Temperature
7
6
5
4
3
2
1
0
– 50
– 25
0
25
50
75
100
125
T –
T
e
mperat
u
re (°C)
J
BV
GSS
vs. Temperature
4
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Si1035X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
0.5
= 5
V
thr
u
2.5
V
500
400
300
200
100
0
2
V
T =
– 55 °C
J
V
GS
25 °C
0.4
0.3
0.2
0.1
0.0
1.
8 V
125 °C
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
25
20
15
10
5
120
100
8
0
60
40
20
0
V
= 0
V
GS
V
= 1.
8 V
GS
f = 1 MHz
C
iss
V
= 2.5
V
GS
V
= 4.5
V
GS
C
oss
C
rss
0
0
200
400
600
8
00
1000
0
4
8
12
16
20
V
– Drain-to-So
u
rce
V
oltage (
V
)
I
– Drain C
u
rrent (mA)
DS
D
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.
8
0.6
V
= 10
V
= 150 mA
DS
I
D
V
= 4.5
V
= 150 mA
GS
I
D
V
= 1.
8 V
= 125 mA
GS
I
D
0.0
0.2
0.4
Q
0.6
0.
8
1.0
1.2
1.4
1.6
– 50
– 25
0
25
50
75
100
125
–
T
o
tal Gate Charge (nC)
T –
J
u
nction
T
e
mperat
u
re (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
5
Si1035X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
1000
100
10
50
40
30
20
10
0
T =
125 °C
J
I
D
= 150 mA
T =
25 °C
J
T =
– 55 °C
J
I
D
= 125 mA
1
1
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
1.4
0
2
3
4
5
6
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 0.25 mA
0.1
V
= 2.
8 V
GS
0.0
– 0.1
– 0.2
– 0.3
– 50
– 25
0
25
50
75
100
125
– 50
– 25
0
25
50
75
100
125
T –
T
e
mperat
u
re (°C)
J
T –
T
e
mperat
u
re (°C)
J
Threshold Voltage Variance vs. Temperature
I
GSS
vs. Temperature
0
– 1
– 2
– 3
– 4
– 5
– 6
– 7
– 50
– 25
0
25
50
75
100
125
T –
T
e
mperat
u
re (°C)
J
BV
GSS
vs. Temperature
6
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Si1035X
Vishay Siliconix
N- OR P-CHANNEL TYPICAL CHARACTERISTICS
(T =
25 °C, unless otherwise noted)
A
2
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 500 °C/
W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
7
Package Information
Vishay Siliconix
SC-89 6-Leads (SOT-563F)
2
3
aaa
C
D
4
e1
2x
4
A
B
D
6
5
4
S
ECTION B-B
C
6
E/2
E
2
3
E1
2x
DETAIL “A”
aaa
C
2x
D
1
2
3
5
bbb
C
e
6x b
B
4
ddd
M
C
A–B
L1
A1
L
A
A1
S
EE DETAIL “A”
Notes
1. Dimensions in millimeters.
MILLIMETERS
NOM.
0.58
2. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash
or protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
DIM.
MIN.
0.56
0
MAX.
0.60
0.10
0.30
0.18
1.70
1.70
1.25
0.55
1.05
0.50
0.30
A
A1
b
0.02
0.15
0.10
1.50
1.50
1.15
0.45
0.95
0.25
0.10
0.22
3. Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
c
0.14
D
1.60
E
1.60
E1
e
1.20
4. Datums A, B and D to be determined 0.10 mm from the lead tip.
5. Terminal numbers are shown for reference only.
0.50
e1
L
1.00
0.35
L1
0.20
6. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C14-0439-Rev. C, 11-Aug-14
DWG: 5880
Revision: 11-Aug-14
Document Number: 71612
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
