Vishay-Intertech-SI1062X-T1-GE3
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New Product
Si1062X
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
T
r
enchFET
®
Power MOSFET
V
DS
(V)
R
DS(on)
(
) Max.
0.420 at V
GS
= 4.5 V
0.492 at V
GS
= 2.5 V
0.597 at V
GS
= 1.8 V
0.762 at V
GS
= 1.5 V
I
D
(A)
0.5
Q
g
(Typ.)
Gate-Source ESD Protected: 1000 V
Material categorization:
For definitions of compliance please see
0.2
20
1 nC
0.2
APPLICATIONS
0.05
•
•
Load/Power Switching for Portable Devices
Drivers: Relays,
Solenoids, Lamps, Hammers, Displays,
Memories
•
•
Battery Operated Systems
Power Supply Converter Circuits
SC-89 (3-LEADS)
G
S
1
2
Marking Code
J
XX
3
D
Lot Tracea
b
ility
and Date Code
Part # Code
T
o
p
V
ie
w
Orderin
g
Information:
Si1062X-T1-GE3 (Lead (P
b
)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
8
0.53
a, b
T
A
= 25 °C
T
A
= 70 °C
Continuous Drain Current (T
J
= 150 °C)
a
I
D
0.43
a, b
2
A
I
DM
I
S
Pulsed Drain Current (t = 300 µs)
0.18
a, b
0.22
a, b
T
A
= 25 °C
Continuous Source-Drain Diode Current
A
W
°C
T
A
= 25 °C
Maximum Power Dissipation
a
P
D
0.14
a, b
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Typ.
Max.
530
Unit
t
5 s
440
540
Maximum Junction-to-Ambient
b
°C/W
Steady State
650
Notes:
a. Surface
mounted on 1″ x 1″ FR4 board.
b. t
= 5 s.
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
1
New Product
Si1062X
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
V
DS
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
20
V
mV/°C
V
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
11
V
GS(th)
T
e
mperature Coefficient
– 1.8
Gate-Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
0.4
1
30
1
V
DS
= 0
V
,
V
GS
V
DS
= 0
V
,
V
GS
=
8 V
Gate-Source Leakage
I
GSS
=
4.5 V
µA
A
V
DS
= 20
V
,
V
GS
= 0 V
V
DS
= 20
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
=
5
V
,
V
GS
= 4.5 V
V
GS
= 4.5
V
,
I
D
= 0.5 A
1
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
10
I
D(on)
2
0.350
0.410
0.459
0.510
7.5
0.420
0.492
0.597
0.762
V
GS
= 2.5
V
,
I
D
= 0.2 A
Drain-Source On-State Resistance
a
R
DS(on)
S
V
GS
= 1.8
V
,
I
D
= 0.2 A
V
GS
= 1.5
V
,
I
D
= 0.05 A
V
DS
= 10
V
,
I
D
= 0.5 A
Forward
T
r
ansconductance
Dynamic
b
g
fs
Input Capacitance
C
iss
C
oss
C
rss
43
14
Output Capacitance
Reverse
T
r
ansfer Capacitance
V
DS
= 10
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
DS
= 10
V
,
V
GS
= 8
V
,
I
D
= 0.5 A
pF
8
1.8
1
2.7
2
T
o
tal Gate Charge
Q
g
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
Q
gs
Q
gd
R
g
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 0.5 A
f = 1 MHz
0.16
0.13
12.2
2
t
d(on)
t
r
t
d(off)
t
f
4
14
24
30
20
V
DD
= 10
V
,
R
L
= 20
ns
I
D
0.4 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
16
11
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
I
SM
V
SD
t
rr
2
1.2
15
4
A
V
I
S
= 0.4 A
0.8
10
2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
I
F
= 0.4 A, dI/dt = 100 A/µs
5
ns
Reverse Recovery Rise Time
t
b
5
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
2
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
New Product
Si1062X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-4
0.8
10
-5
0.6
T
J
= 150
°
C
10
-6
0.4
T
J
= 25
°
C
T
J
= 25
°
C
10
-7
0.2
10
-8
10
-9
0
0
4
7
11
14
0
0
0
2
4
6
8
10
12
14
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
2
1.5
1
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 5 V thru 2 V
V
GS
= 1.5 V
T
C
= 25
°
C
0.5
0
T
C
= 125
°
C
V
GS
= 1 V
T
C
= – 55
°
C
1.2 1.5
0.5
1
1.5
2
0
0.3
0.6
0.9
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
60
45
30
15
0
0.8
0.6
0.4
0.2
C
iss
V
GS
= 1.8 V
V
GS
= 1.5 V
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
5
10
15
20
0.5
1
1.5
2
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
3
New Product
Si1062X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
4
2
0
1.7
1.5
1.3
1.1
0.9
0.7
I
D
= 0.5 A
I
D
= 0.5 A
V
GS
= 4.5 V, 2.5 V
V
DS
= 10 V
V
DS
= 5 V
V
DS
= 16 V
0
0.5
1
1.5
2
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
10
0.8
0.65
0.5
I
D
= 0.5 A
T
J
= 150
°
C
T
J
= 125
1
T
J
= 25
°
C
0.35
0.2
T
J
= 25
°
C
0.1
0.0
0.3
0.6
0.9
1.2
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
8
0.7
0.6
0.5
0.4
0.3
I
D
= 250 μA
6
4
2
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
4
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
New Product
Si1062X
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.24
0.18
0.12
0.06
0
10
100 μs
1 ms
1
Limited by R
DS(on)
*
10 ms
0.1
0.01
100 ms
1 s
DC, 10 s
T
A
= 25
°
C
Single Pulse
BVDSS Limited
10
0.001
0.1
1
100
0
25
50
75
100
125
150
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
T
A
– Ambient Temperature (
°
C)
Safe Operating Area, Junction-to-Ambient
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.001
0.01
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 62661
S12-2732-Rev. B, 12-Nov-12
5
Package Information
Vishay Siliconix
SC89Ć3
X
E
D
A
C
H
L
DETAIL X
3
MILLIMETERS
INCHES
Dim
Min
0.60
0.23
0.10
1.50
0.75
Max
0.80
0.33
0.20
1.70
0.95
Min
Max
0.031
0.013
0.008
0.067
0.037
0.024
0.009
0.004
0.059
0.030
A
b
C
D
E
1
2
1.00 BSC
0.50 BSC
1.50
0.30
0.040 BSC
0.020 BSC
e
e1
b
e
1
H
L
e
1.70
0.50
0.059
0.012
0.067
0.020
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5869
Document Number: 71377
06-Jul-01
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM
P
A
DS FOR SC-89: 3-Lead
RECOMMENDED MINIMUM PADS FOR SC-89:
3-LEAD
0.0200
0.0150
)
)
(0.51
(0.38
0.0250
0.0150
)
)
(0.64
(0.38
0.0550
)
(1.40
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
20
Document Number: 72604
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
