Vishay-Intertech-SI1403BDL-T1-E3
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Si1403BDL
Vishay Siliconix
P-Channel 2.5 V (G-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
S
OT-
3
6
3
S
C-70
S
in
g
le (6 lea
d
s)
S
4
• Material categorization:
for definitions of compliance please see
D
5
D
6
Available
3
G
2
D
1
D
Top View
Marking code
: OD
PRODUCT SUMMARY
V
DS
(V)
-20
0.150
0.175
0.265
2.9
R
R
R
DS(on)
max. (
) at V
GS
= -4.5 V
DS(on)
max. (
) at V
GS
= -3.6 V
DS(on)
max. (
) at V
GS
= -2.5 V
Q
g
typ. (nC)
D
(A)
I
-1.5
Configuration
Single
ORDERING INFORMATION
Package
SC-70
Lead (Pb)-free
Si1403BDL-T1-E3
Si1403BDL-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
5 s
STEADY STATE
UNIT
Drain-source voltage
Gate-source voltage
V
DS
-20
-20
12
V
V
GS
12
T
A
= 25 °C
T
A
= 85 °C
-1.5
-1.2
-5
-1.4
-1.0
-5
Continuous drain current (T
J
= 150 °C)
a
I
D
A
Pulsed drain current
Continuous diode current (diode conduction)
a
I
DM
I
S
-0.8
0.625
0.400
-0.8
0.568
0.295
T
A
= 25 °C
T
A
= 85 °C
Maximum power dissipation
a
P
D
W
Operating junction and storage temperature range
T
J
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
200
UNIT
t
5 s
165
180
105
Maximum junction-to-ambient
a
Maximum junction-to-foot (drain)
R
thJA
R
thJF
Steady state
Steady state
220
°C/W
130
Note
a. Surface
mounted on 1″ x 1″ FR4 board
S10-0110-Rev. D, 18-Jan-10
Document Number: 73253
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si1403BDL
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Gate threshold voltage
Gate leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= -250 μA
-0.6
–
–
-1.3
100
-1
V
V
DS
= 0 V, V
GS
=
12 V
–
–
nA
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= -5 V, V
GS
= -4.5 V
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
μA
A
–
–
-5
I
D(on)
-2
–
–
–
V
GS
= -4.5 V, I
D
= -1.5 A
0.120
0.140
0.220
3.4
-0.8
0.150
0.175
0.265
–
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -3.6 V, I
D
= -1.4 A
GS
= -2.5 V, I
D
= -0.8 A
–
V
–
Forward transconductance
a
Diode forward voltage
a
Dynamic
b
g
fs
V
DS
= -10 V, I
D
= -1.5 A
I
S
= -0.8 A, V
GS
= 0 V
–
S
V
V
SD
–
-1.1
Total gate charge
Q
g
Q
gs
Q
gd
R
g
–
–
–
–
–
–
–
–
–
–
2.9
0.65
1.0
9
4.5
–
Gate-source charge
Gate-drain charge
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1.5 A
f = 1 MHz
nC
–
Gate resistance
–
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
13
30
28
13
12
4
20
45
42
20
25
8
V
DD
= -10 V, R
L
= 10
,
I
D
-1 A, V
GEN
= -4.5 V, R
g
= 6
Turn-off delay time
Fall time
ns
Source-drain reverse recovery time
Body diode reverse recovery charge
t
rr
I
F
= -0.8 A, dI/dt = 100 A/μs
Q
rr
nC
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4.0
3.2
2.4
1.6
0.8
0.0
4.0
3.2
2.4
1.6
0.8
0.0
T
= – 55 °C
C
V
GS
= 5 V thru 2.5. V
25 °C
125 °C
2 V
1.5 V
1
V
,
0
.5 V
3.2 4.0
0.0
0.8
1.6
2.4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
S10-0110-Rev. D, 18-Jan-10
Document Number: 73253
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si1403BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
500
400
300
200
100
0
0.40
0.32
C
iss
0.24
0.16
0.08
0.00
V
GS
= 2.5 V
V
V
= 3.6 V
= 4.5 V
GS
C
oss
GS
C
rss
0
4
8
12
16
20
0
1
2
3
4
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
D
= 4.5 V
DS
= 1.5 A
GS
I =
1.5 A
I
0.0
0.5
1.0
1.5
2.0
2.5
3.0
– 50
– 25
0
25
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
T –
Junction
T
e
mperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
T
= 150 °C
J
I
D
= 1.5
A
I
D
= 0.8
A
1
T
= 25 °C
J
0.1
0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
S10-0110-Rev. D, 18-Jan-10
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73253
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si1403BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.5
0.4
10
8
0.3
0.2
I
D
= 250
µ
A
6
0.1
4
2
0.0
– 0.1
– 0.2
– 0.3
0
-2
-1
– 50
– 25
0
25
50
75
100 125 150
10
10
1
10
100
T
– Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
10
µ
s
100
µ
s
1 ms
Limited
b
y
DS(on)
R
*
1
10 ms
0.1
100 ms
1 s, 100 s, DC
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
>
* V
GS
minimum V
at which R
is specified
DS(on)
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 180 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wa
v
e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S10-0110-Rev. D, 18-Jan-10
Document Number: 73253
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si1403BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wa
v
e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
S10-0110-Rev. D, 18-Jan-10
Document Number: 73253
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
SCĆ70: 6ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom
Max
6
1
5
2
4
3
0.90
–
–
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
0.035
–
–
–
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
A
E
E
1
–
A
1
0.80
–
0.031
0.006
0.004
0.071
0.071
0.045
–
A
2
0.15
–
–
b
-B-
0.10
–
–
c
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7
_
Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7
_
Nom
D
e
1
1.80
E
-A-
D
1.15
E
1
c
e
1.20
1.40
0.30
0.047
0.004
0.055
0.012
A
e
1
A
2
1
0.10
L
L
A
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Document Number: 71154
06-Jul-01
1
AN813
Vishay Siliconix
Single-Channel LITTLE FOOT
R
SC-70 3-Pin and 6-Pin MOSFET
Recommended Pad Pattern and Thermal Peformance
INTRODUCTION
BASIC PAD PATTERNS
This technical note discusses pin-outs, package outlines, pad
patterns, evaluation board layout, and thermal performance
for single-channel LITTLE FOOT power MOSFE
T
s
i
n the
SC-70 package. These new Vishay Siliconix devices are
intended for small-signal applications where a miniaturized
package is needed and low levels of current (around 350 mA)
need to be switched, either directly or by using a level shift
configuration. Vishay provides these single devices with a
range of on-resistance specifications and in both traditional
3-pin and new 6-pin versions. The new 6-pin SC-70 package
enables improved on-resistance values and enhanced
thermal performance compared to the 3-pin package.
See Application Note 826,
Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay
Siliconix
pad layout and dimensions for the 3-pin SC-70 and the 6-pin
SC-70. These pad patterns are sufficient for the low-power
applications for which this package is intended. Increasing the
pad pattern has little effect on thermal resistance for the 3-pin
device, reducing it by only 10% to 15%. But for the 6-pin
device, increasing the pad patterns yields a reduction in
thermal resistance on the order of 35% when using a 1-inch
square with full copper on both sides of the printed circuit board
(PCB). The availability of four drain leads rather than the
traditional single drain lead allows a better thermal path from
the package to the PCB and external environment.
PIN-OUT
Figure 1 shows the pin-out description and Pin 1 identification
for the single-channel SC-70 device in both 3-pin and 6-pin
configurations. The pin-out of the 6-pin device allows the use
of four pins as drain leads, which helps to reduce on-resistance
and junction-to-ambient thermal resistance.
EVALUATION BOARDS FOR THE SINGLE
SC70-3 AND SC70-6
Figure 2 shows the 3-pin and 6-pin SC-70 evaluation boards
(EVB). Both
measure 0.6 inches by 0.5 inches. Their copper
pad traces are the same as described in the previous section,
Basic Pad Patterns
. Both boards allow interrogation from the
outer pins to 6-pin DIP connections, permitting test sockets to
be used in evaluation testing.
SOT-323
SC-70 (3-LEADS)
SOT-363
SC-70 (6-LEADS)
T
o
p View
Top View
G
S
1
D
D
G
1
2
3
6
The thermal performance of the single SC-70 has been
measured on the EVB for both the 3-pin and 6-pin devices,
the
results shown in Figures 3 and 4. The minimum recommended
footprint on the evaluation board was compared with the
industry standard of 1-inch square FR4 PCB with copper on
both sides of the board.
3
5
4
D
2
FIGURE 1.
For package dimensions see outline drawings:
Back of Board, SC70-3 and SC70-6
Front of Board SC70-3
Front of Board SC70-6
ChipFET
r
ChipFET
r
vishay.com
FIGURE 2.
Document Number:
71236
12-Dec-03
1
AN813
Vishay Siliconix
THERMAL PERFORMANCE
Junction-to-Foot Thermal Resistance
(the Package Performance)
SC-70 (6-PIN)
Room Ambient 25
_
C
Elevated Ambient 60
_
C
Thermal performance for the 3-pin SC-70 measured as
junction-to-foot thermal resistance is 285
_
C/W typical,
340
_
C/W maximum. Junction-to-foot thermal resistance for
the 6-pin SC70-6 is 105
_
C/W typical, 130
_
C/W maximum —
a nearly two-thirds reduction compared with the 3-pin device.
The “foot” is the drain lead of the device as it connects with the
body. This improved performance is obtained by the increase
in drain leads from one to four on the 6-pin SC-70. Note that
these numbers are somewhat higher than other LITTLE FOOT
devices due to the limited thermal performance of the Alloy 42
lead-frame compared with a standard copper lead-frame.
T
J(max)
*
T
A
R
q
JA
T
J(max)
*
T
A
P
D
+
P
D
P
D
+
+
R
q
JA
150
o
C
*
25
o
C
180
o
C
ń
W
150
o
C
*
60
o
C
180
o
C
ń
W
P
D
+
P
D
+
694 mW
P
D
+
500 mW
NOTE: Although
they are intended for low-power applications,
devices in the 6-pin SC-70 will handle power dissipation in
excess of 0.5 W.
Testing
Junction-to-Ambient Thermal Resistance
(dependent on PCB size)
To
a
id comparison further, Figures 3 and 4 illustrate
single-channel SC-70 thermal performance on two different
board sizes and two different pad patterns. The results display
the thermal performance out to steady state and produce a
graphic account of the thermal performance variation between
the two packages. The measured steady state values of R
θ
JA
for the single 3-pin and 6-pin SC-70 are as follows:
The typical R
θ
JA
for the single 3-pin SC-70 is 360
_
C/W steady
state, compared with 180
_
C/W for the 6-pin SC-70. Maximum
ratings are 430
_
C/W for the 3-pin device versus 220
_
C/W for
the 6-pin device. All figures are based on the 1-inch square
FR4 test board.The following table shows how the thermal
resistance impacts power dissipation for the two different
pin-outs at two different ambient temperatures.
LITTLE FOOT SC-70
3-Pin
6-Pin
1) Minimum recommended pad pattern
(see Figure 4) on the EVB.
410.31
_
C/W
329.7
_
C/W
SC-70 (3-PIN)
Room Ambient 25
_
C
Elevated Ambient 60
_
C
2) Industry standard 1” square PCB with
maximum copper both sides.
360
_
C/W
211.8
_
C/W
T
J(max)
*
T
A
T
J(max)
*
T
A
R
q
JA
The results show that designers can reduce thermal
resistance R
θ
JA
on the order of 20% simply by using the 6-pin
device rather than the 3-pin device. In this example, a 80
_
C/W
reduction was achieved without an increase in board area. If
increasing board size is an option, a further 118
_
C/W reduction
could be obtained by utilizing a 1-inch square PCB area.
P
D
+
P
D
P
D
+
+
R
q
JA
150
o
C
*
25
o
C
360
o
C
ń
W
150
o
C
*
60
o
C
360
o
C
ń
W
P
D
+
P
D
+
250 mW
P
D
+
347 mW
400
320
400
320
240
3-pin
3-pin
240
6-pin
6-pin
160
80
160
80
0.5 in x 0.6 in EVB
1” Square FR4 PCB
0
0
-5
-4
-3
-2
-1
-5
-4
-3
-2
-1
10
10
10
10
10
Time (Secs)
1
10
100
1000
10
10
10
10
10
Time (Secs)
1
10
100
1000
FIGURE 4.
Comparison of SC70-3 and SC70-6 on 1”
Square FR4 PCB
FIGURE 3.
Comparison of
SC70-3 and SC70-6 on EVB
Document Number:
71236
12-Dec-03
2
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
