Vishay-Intertech-SI1902DL-T1-GE3
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Si1902DL
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET Power
MOSFETs: 2.5 V Rated
100 % R
g
Tested
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
0.70
0.54
®
•
•
0.385 at V
GS
= 4.5 V
0.630 at V
GS
= 2.5 V
20
•
Compliant to RoHS Directive 2002/95/EC
SO
T
–
363
SC-70 (6-LEADS)
S
1
G
1
D
2
1
2
3
6
D
1
Marking Code
A
PA
X
5
4
G
2
Lot
T
r
aceability
and Date Code
Part # Code
S
2
T
o
p V
iew
Ordering Information:
Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)
Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
5 s
Steady State
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
20
12
V
V
GS
T
A
= 25 °C
0.70
0.50
0.66
0.48
Continuous Drain Current (T
J
= 150 °C)
a
I
D
T
A
= 85 °C
A
I
DM
I
S
1
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
0.25
0.30
0.16
0.23
0.27
0.14
T
A
= 25 °C
Maximum Power Dissipation
a
P
D
W
T
A
= 85 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
360
Maximum
Unit
t
5 s
415
460
350
Maximum Junction-to-Ambient
a
R
thJA
Steady State
Steady State
400
°C/W
R
thJF
Maximum Junction-to-Foot (Drain)
Notes:
300
a. Surface Mounted on 1″ x 1″ FR4 board.
Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
1
This document is subject to change without notice.
Si1902DL
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
Gate Threshold Voltage
0.6
1.5
100
1
V
V
DS
= 0
V
,
V
GS
=
12 V
Gate-Body Leakage
nA
V
DS
= 16
V
,
V
GS
= 0 V
DS
= 16 V
GS
= 0
V
,
T
J
= 85°C
V
DS
5
V
,
V
GS
= 4.5 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Current
a
1
V
GS
= 4.5
V
,
I
D
= 0.66 A
0.320
0.560
1.5
0.385
0.630
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5
V
,
I
D
= 0.40 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= 10
V
,
I
D
= 0.66 A
I
S
= 0.23 A, V
GS
= 0 V
S
V
V
SD
0.8
1.2
1.2
Q
g
Q
gs
Q
gd
T
o
tal Gate Charge
0.8
0.06
0.30
1
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 0.66 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
nC
R
g
t
d(on)
t
r
0.2
1.7
20
30
20
20
40
T
u
rn-On Delay Time
Rise Time
10
16
V
DD
= 10
V
,
R
L
= 20
I
D
0.5 A, V
GEN
= 4.5
V
,
R
g
= 6
t
d(off)
t
f
T
u
rn-Off DelayTime
Fall Time
10
ns
10
t
rr
I
F
= 0.23 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
20
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 5 V thru 2.5 V
2 V
T
= 125 °C
C
1.5 V
1 V
25 °C
– 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
V
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
2
Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
This document is subject to change without notice.
Si1902DL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
80
60
40
20
0
1.0
0.8
C
iss
0.6
0.4
0.2
0.0
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
0
4
8
12
16
20
0.0
0.2
0.4
0.6
0.8
1.0
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 0.66 A
V
= 4.5 V
= 0.66 A
DS
GS
I
D
I
D
0.0
0.2
Q
0.4
0.6
0.8
– 50
– 25
0
2
5
5
0
7
5
100 125 150
– Total Gate Charge (nC)
T –
Junction Temperature (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
1.0
0.8
0.6
0.4
0.2
0.0
1
I
D
= 0.66 A
T
J
= 150 °C
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Surge-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
3
Si1902DL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.2
5
4
3
0.1
I
D
= 250 µA
0
– 0.1
– 0.2
– 0.3
– 0.4
2
1
0
10
-3
-2
-1
– 50
– 25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
J
– Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
0.02
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 400 °C/W
thJA
(t)
3 . T
– T
= P
JM
Z
A
DM
th
JA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
4
Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
This document is subject to change without notice.
Package Information
Vishay Siliconix
SCĆ70: 6ĆLEADS
MILLIMETERS
INCHES
Dim Min
Nom Max Min Nom
Max
6
1
5
2
4
3
0.90
–
–
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
0.035
–
–
–
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
A
E
E
1
–
A
1
0.80
–
0.031
0.006
0.004
0.071
0.071
0.045
–
A
2
0.15
–
–
b
-B-
0.10
–
–
c
e
b
1.80
2.00
2.10
1.25
0.65BSC
1.30
0.20
7
_
Nom
0.079
0.083
0.049
0.026BSC
0.051
0.008
7
_
Nom
D
e
1
1.80
E
-A-
D
1.15
E
1
c
e
1.20
1.40
0.30
0.047
0.004
0.055
0.012
A
e
1
A
2
1
0.10
L
L
A
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Document Number: 71154
06-Jul-01
1
AN814
Vishay Siliconix
Dual-Channel LITTLE FOOT
R
SC-70 6-Pin MOSFET
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
This technical note discusses the pin-outs, package outlines,
applications for which this package is intended. For the 6-pin
device, increasing the pad patterns yields a reduction in
thermal resistance on the order of 20% when using a 1-inch
square with full copper on both sides of the printed circuit board
(PCB).
pad patterns, evaluation board layout, and thermal
performance for dual-channel LITTLE FOOT power
MOSFE
T
s
i
n the SC-70 package. These new Vishay Siliconix
devices are intended for small-signal applications where a
miniaturized package is needed and low levels of current
(around 250 mA) need to be switched, either directly or by
using a level shift configuration. Vishay provides these devices
with a range of on-resistance specifications in 6-pin versions.
The new 6-pin SC-70 package enables improved
on-resistance values and enhanced thermal performance.
EVALUATION BOARDS FOR THE DUAL
SC70-6
The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches
by 0.5 inches. The copper pad traces are the same as
described in the previous section,
Basic Pad Patterns
. The
board allows interrogation from the outer pins to 6-pin DIP
connections permitting test sockets to be used in evaluation
testing.
PIN-OUT
Figure 1 shows the pin-out description and Pin 1 identification
for the dual-channel SC-70 device in the 6-pin configuration.
The thermal performance of the dual SC-70 has been
measured on the EVB with the results shown below. The
minimum recommended footprint on the evaluation board was
compared with the industry standard 1-inch square FR4 PCB
with copper on both sides of the board.
SOT-363
SC-70 (6-LEADS)
S
1
G
1
D
2
1
2
3
6
5
D
1
THERMAL PERFORMANCE
G
2
Junction-to-Foot Thermal Resistance
(the Package Performance)
4
S
2
Thermal performance for the dual SC-70 6-pin package
measured as junction-to-foot thermal resistance is 300
_
C/W
typical, 350
_
C/W maximum. The “foot” is the drain lead of the
device as it connects with the body. Note that these numbers
are somewhat higher than other LITTLE FOOT devices due to
the limited thermal performance of the Alloy 42 lead-frame
compared with a standard copper lead-frame.
T
o
p View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
Junction-to-Ambient Thermal Resistance
(dependent on PCB size)
The typical R
θ
JA
for the dual 6-pin SC-70 is 400
_
C/W steady
state. Maximum ratings are 460
_
C/W for the dual. All figures
based on the 1-inch square FR4 test board. The following
example shows how the thermal resistance impacts power
dissipation for the dual 6-pin SC-70 package at two different
ambient temperatures.
BASIC PAD PATTERNS
See Application Note 826,
Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay
Siliconix
SC-70. This basic pad pattern is sufficient for the low-power
Document Number:
71237
12-Dec-03
1
AN814
Vishay Siliconix
500
400
300
SC-70 (6-PIN)
Dual EVB
Room Ambient 25
_
C
Elevated Ambient 60
_
C
T
J(max)
*
T
A
T
J(max)
*
T
A
P
D
+
P
D
+
R
q
JA
R
q
JA
150
o
C
*
60
o
C
400
o
C
ń
W
150
o
C
*
25
o
C
400
o
C
ń
W
P
D
+
P
D
+
200
100
P
D
+
312 mW
P
D
+
225 mW
NOTE: Although
they are intended for low-power applications,
devices in the 6-pin SC-70 will handle power dissipation in
excess of 0.2 W.
1” Square FR4 PCB
0
-5
-4
-3
-2
-1
10
10
10
10
10
Time (Secs)
1
10
100
1000
Testing
FIGURE 2.
Comparison of Dual SC70-6 on EVB and 1”
Square FR4 PCB.
To aid comparison further, Figure 2 illustrates the dual-channel
SC-70 thermal performance on two different board sizes and
two different pad patterns. The results display the thermal
performance out to steady state. The measured steady state
values of R
θ
JA
for the dual 6-pin SC-70 are as follows:
The results show that if the board area can be increased and
maximum copper traces are added, the thermal resistance
reduction is limited to 20%.
This fact confirms that the power
dissipation is restricted with the package size and the Alloy 42
leadframe.
LITTLE FOOT SC-70 (6-PIN)
1) Minimum recommended pad pattern (see
Figure 2) on the EVB of 0.5 inches x
0.6 inches.
ASSOCIATED DOCUMENT
518
_
C/W
413
_
C/W
Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper
Leadframe Version, REcommended Pad Pattern and Thermal
2) Industry standard 1” square PCB with
maximum copper both sides.
Document Number:
71237
12-Dec-03
2
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
