Vishay-Intertech-SI1965DH-T1-GE3
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Si1965DH
Vishay Siliconix
Dual P-Channel 12 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
– 1.3
a
– 1.2
Q
g
(Typ.)
Definition
0.390 at V
GS
= – 4.5 V
0.535 at V
GS
= – 2.5 V
0.710 at V
GS
= – 1.8 V
•
•
TrenchFET
®
Power MOSFET
Compliant to RoHS Directive 2002/95/EC
– 12
1.7 nC
– 1.1
APPLICATIONS
•
Load Switch for Portable Devices
SOT-363
SC-70 (6-LEADS)
S
1
S
2
S
1
G
1
D
2
1
2
3
6
D
1
Marking Code
5
4
G
2
G
G
2
DE XX
1
Lot Traceability
and Date Code
S
2
Part # Code
Top View
Ordering Information:
Si1965DH-T1-E3 (Lead (Pb)-free)
D
D
2
1
P-Channel MOSFET
P-Channel MOSFET
Si1965DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
– 12
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
8
T
C
= 25 °C
T
C
= 70 °C
– 1.3
a
– 1.2
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
– 1.14
b, c
– 0.9
b, c
– 3
T
A
= 70 °C
A
Pulsed Drain Current
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
– 1
– 0.6
b, c
Continuous Source-Drain Diode Current
1.25
T
C
= 70 °C
A
= 25 °C
0.8
Maximum Power Dissipation
P
D
W
T
0.74
b, c
0.47
b, c
– 55 to 150
T
A
= 70 °C
T
J
, T
stg
°C
Operating Junction and Storage
T
e
mperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
Typical
130
Maximum
170
Unit
R
thJA
R
thJF
t
≤
5 s
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
80
100
Notes:
a. Package
limited.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 220 °C/W.
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
1
Si1965DH
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
– 12
V
– 14
2
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= – 250 µA
– 0.4
– 1.0
100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
8 V
nA
V
DS
= – 12
V
,
V
GS
= 0 V
DS
= – 12
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
DS
≤
– 5
V
,
V
GS
= – 4.5 V
V
GS
=
– 4.5
V
,
I
D
= – 1.0 A
V
GS
=
– 2.5
V
,
I
D
= – 0.86 A
V
GS
=
– 1.8
V
,
I
D
= – 0.25 A
V
DS
= – 6
V
,
I
D
= – 1.0 A
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
µA
A
V
– 10
I
D(on)
– 3
0.315
0.425
0.550
2.5
0.390
0.535
0.710
Drain-Source On-State Resistance
a
R
DS(on)
Ω
Forward
T
r
ansconductance
a
Dynamic
b
g
fs
S
Input Capacitance
C
iss
C
oss
C
rss
120
41
25
2.8
1.7
0.3
0.4
7.5
12
27
15
10
2
Output Capacitance
Reverse
T
r
ansfer Capacitance
V
DS
= – 6
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
DS
= – 6
V
,
V
GS
= – 8
V
,
I
D
= – 1.1 A
pF
4.2
2.6
T
o
tal Gate Charge
Q
g
nC
Gate-Source Charge
Q
gs
Q
gd
R
g
V
DS
= – 6
V
,
V
GS
= – 4.5
V
,
I
D
= – 1.1 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
Ω
T
u
rn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
20
40
25
15
5
Rise Time
V
DD
= – 6
V
,
R
L
= 6.7
Ω
I
D
≅
– 0.9 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
12
12
10
20
20
15
V
DD
= – 6
V
,
R
L
= 6.7
Ω
I
D
≅
– 0.9 A, V
GEN
= – 8
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 0.9 A
– 1.0
– 3.0
– 1.2
40
A
– 0.8
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
10
20
I
F
= – 0.9 A, dI/dt = 100 A/µs, T
J
= 25 °C
9.5
11.5
ns
t
b
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
1.0
0.
8
0.6
0.4
0.2
0.0
V
GS
= 5
V
thr
u
2.5
V
2.5
2.0
1.5
1.0
0.5
0.0
V
= 2
V
GS
GS
T
C
= 25 °C
V
= 1.5
V
= 1
V
T
C
= 125 °C
V
GS
T
C
= – 55 °C
1.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
2.0
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
1.0
0.
8
0.6
0.4
0.2
0.0
200
160
120
8
0
V
GS
= 1.
8 V
C
iss
V
GS
= 2.5
V
C
oss
V
GS
= 4.5
V
40
C
rss
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
3
6
9
12
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.
8
0.7
8
6
4
2
0
I
= 1.1 A
D
V
GS
= 4.5
V
; 2.5
V
; I
= 1 A
D
V
DS
= 6
V
V
GS
= 1.
8 V
; I
= 0.14 A
D
V
DS
= 9.6
V
– 50
– 25
0
25
50
75
100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
–
T
o
tal Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
3
Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.0
0.
8
0.6
0.4
0.2
0.0
10
I
= 1 A
D
T
J
= 150 °C
T
J
= 25 °C
T
= 125 °C
J
1
T
J
= 25 °C
0.1
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
1.4
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.
8
0.7
0.6
0.5
0.4
0.3
5
4
3
2
1
0
I
= 250
µ
A
D
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
–
T
e
mperat
u
re (°C)
J
Time (s)
Single Pulse Power
Threshold Voltage
10
Limited
b
y R
*
DS(on)
1
1 ms
10 ms
100 ms
0.1
1 s, 10 s
DC
T
= 25 °C
A
Single P
u
lse
B
V
DSS Limited
0.01
0.1
100
1
10
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
4
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
1.4
1.2
1.0
0.
8
0.6
0.4
0.2
0.0
1.6
1.2
0.
8
0.4
0.0
Package Limited
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
5
Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
0.02
2. Per Unit Base = R
= 220 °C/
W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
1
