Vishay-Intertech-SI2303CDS-T1-E3
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Si2303CDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
MOSFET PRODUCT SUMMARY
•
I
D
(A)
a
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
•
TrenchFET
®
Power MOSFET
0.190 at V
GS
= – 10 V
0.330 at V
GS
= – 4.5 V
– 2.7
– 30
2 nC
•
•
100 % R
g
Tested
100 % UIS Tested
– 2.1
APPLICATIONS
Load Switch
•
TO-236
(SOT-23)
G
S
1
2
3
D
Top
V
ie
w
Si2303CDS (
N
3)*
* Marking Code
Orderin
g
Information:
Si2303CDS-T1-E3 (Lead (P
b
)-free)
Si2303CDS-T1-GE3 (Lead (P
b
)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
– 30
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
– 2.7
– 2.2
– 1.9
b, c
– 1.5
b, c
– 10
Continuous Drain Current (T
J
= 150 °C)
I
D
T
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
– 1.75
– 0.83
b, c
Continuous Source-Drain Diode Current
I
AS
E
AS
Avalanche Current
– 5
L = 0.1 mH
mJ
W
Single Pulse Avalanche Energy
1.25
2.3
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
1.5
P
D
Maximum Power Dissipation
1.0
b, c
0.7
b, c
T
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
°C
– 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
R
thJA
Typical
80
Maximum
Unit
≤
5 s
Steady State
120
55
°C/W
R
thJF
35
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under Steady State conditions is 160 °C/W.
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
1
Si2303CDS
Vishay Siliconix
MOSFET SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
= 0
V
,
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 30
V
V
DS
T
e
mperature Coefficient
Δ
V
DS
/T
J
– 27
3.8
mV/°C
I
D
= – 250 µA
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Δ
V
/T
GS(th) J
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= – 250 µA
– 1
– 3
100
– 1
V
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 30
V
,
V
GS
= 0 V
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≤
– 5
V
,
V
GS
= – 10 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
– 10
– 10
V
GS
= – 10
V
,
I
D
= – 1.9 A
0.158
0.275
2
0.190
0.330
Drain-Source On-State Resistance
a
Ω
S
V
GS
= – 4.5
V
,
I
D
= – 1.4 A
Forward
T
r
ansconductance
a
V
DS
= – 5
V
,
I
D
= – 1.9 A
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
155
35
25
4
V
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 1.9 A
8
4
Q
g
T
o
tal Gate Charge
2
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 1.9 A
f = 1 MHz
0.6
1
1.7
8.5
4
17
8
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
11
11
8
18
18
16
44
45
18
14
V
DD
= – 15
V
,
R
L
= 10
Ω
I
D
= – 1.5 A, V
GEN
= – 10
V
,
R
G
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
36
37
12
9
V
DD
= – 15
V
,
R
L
= 10
Ω
I
D
≅
– 1.5 A, V
GEN
= – 4.5
V
,
R
G
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 1.5 A
– 1.75
– 10
– 1.2
26
A
Pulse Diode Forward Current
a
Body Diode Voltage
– 0.8
17
9
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
14
I
F
= – 1.5 A, di/dt = 100 A/µs, T
J
= 25 °C
12
5
ns
t
b
Notes:
a. Pulse
test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
1.0
0.
8
0.6
0.4
0.2
0.0
V
GS
= 10 thr
u
5
V
8
6
4
2
0
V
GS
= 4
V
T
C
= 125 °C
T
C
= 25 °C
V
GS
= 3
V
T
C
= – 55 °C
0
1
2
3
4
5
0
1
2
3
4
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0
300
240
1
8
0
120
60
V
GS
= 4.5
V
C
iss
V
GS
= 10
V
C
oss
C
rss
0
0
2
4
6
8
10
0
6
12
1
8
24
30
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
1.4
1.2
1.0
0.
8
0.6
10
I
= 1.9 A
D
8
V
GS
= 10
V
, I
= 1.9 A
D
V
DS
= 15
V
6
V
DS
= 24
V
V
GS
= 4.5
V
, I
= 1.4 A
D
4
2
0
– 50
– 25
0
25
50
75
100 125 150
0
1
2
3
4
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
–
T
o
tal Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
3
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.5
0.4
0.3
0.2
0.1
0.0
10
I
= 1.9 A
D
T
J
= 150 °C
T
J
= 25 °C
T
= 125 °C
J
1
T
= 25 °C
J
0.1
0
4
8
12
16
20
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
6
5
4
3
2
1
0
2.2
2.0
1.
8
1.6
1.4
I
= 250
µ
A
D
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power
T
–
T
e
mperat
u
re (°C)
J
Threshold Voltage
10
Limited
b
y R
DS(on)*
100
µ
s
1
1 ms
10 ms
0.1
100 ms
1 s, 10 s
DC
T
= 25 °C
A
B
V
DSS Limited
Single P
u
lse
0.01
0.1
100
1
10
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area
4
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
2.4
1.
8
1.2
0.6
0.0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
3.0
2.4
1.
8
1.2
0.6
0.0
1.0
0.
8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
0
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
5
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 104 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
