Vishay-Intertech-SI2308BDS-T1-BE3
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Si2308BDS
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
S
OT-2
3
(TO-2
3
6)
• Halogen-free according to IEC 61249-2-21
available
D
3
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
2
S
APPLICATIONS
• Battery Switch
D
1
G
Top View
• DC/DC Converter
Marking Code
: Si2308BDS (L8)
G
PRODUCT SUMMARY
V
DS
(V)
60
R
R
DS(on)
max. (
Ω
) at V
GS
= 10 V
DS(on)
max. (
Ω
) at V
GS
= 4.5 V
0.156
0.192
2.3
S
N-Channel MO
S
FET
Q
g
typ. (nC)
D
(A)
a
I
2.1
Configuration
Single
ORDERING INFORMATION
Package
TSOP-6 Single
Lead (Pb)-free
SI2308BDS-T1-E3
SI2308BDS-T1-GE3
SI2308BDS-T1-BE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
LIMIT
60
20
UNIT
V
DS
V
GS
V
T
C
= 25 °C
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
2.3
1.8
1.9
b,c
1.5
b,c
8
1.39
0.91
b,c
6
T
Continuous drain current (T
J
= 150 °C)
I
D
Pulsed drain current
I
DM
I
S
A
T
C
= 25 °C
Continuous source-drain diode current
T
A
= 25 °C
Avalanche current
Single pulse avalanche energy
I
AS
E
AS
L = 0.1 mH
1.8
T
T
C
= 25 °C
C
= 70 °C
1.66
1.06
1.09
b,c
0.7
b,c
-55 to +150
Maximum power dissipation
P
D
W
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
SYMBOL
R
thJA
R
thJF
TYPICAL
MAXIMUM
UNIT
t
≤
5 s
Steady State
90
60
115
75
°C/W
Notes
a. T
C
= 25 °C
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 5 s
d. Maximum
under steady state conditions is 130 °C/W
S21-0226-Rev. D, 08-Mar-2021
Document Number: 69958
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2308BDS
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
DS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
60
–
–
–
V
V
DS
temperature coefficient
GS(th)
temperature coefficient
55
–
mV/°C
V
–
-5
–
Gate-source threshold voltage
Gate-source leakage
V
DS
= V
GS
, I
D
= 250 μA
1
–
–
3
100
1
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
nA
V
DS
= 60 V, V
GS
= 0 V
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
–
–
–
10
V
DS
≥
-5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 1.9 A
GS
= 4.5 V, I
D
= 1.7 A
V
DS
= 15 V, I
D
= 1.9 A
8
–
–
0.130
0.160
5
0.156
0.192
–
Drain-source on-state resistance
a
Ω
S
V
–
Forward Transconductance
a
Dynamic
b
–
Input capacitance
C
iss
C
oss
C
rss
–
–
190
26
15
4.5
2.3
0.8
1
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 1.9 A
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 1.9 A
f = 1 MHz
pF
–
–
–
6.8
3.5
–
Total gate charge
Q
g
–
nC
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Q
gs
Q
gd
R
g
–
–
–
0.6
–
2.8
4
5.6
6
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
–
10
10
7
15
15
10.5
23
24
17
17
V
DD
= 30 V, R
L
= 20
Ω
I
D
≅
1.5 A, V
GEN
= 10 V, R
g
= 1
Ω
Turn-off delay time
Fall time
–
–
ns
Turn-on delay time
Rise time
–
15
16
11
11
–
V
DD
= 30 V, R
L
= 20
Ω
I
D
=
1.5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Turn-off delay time
Fall time
–
–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
a
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 1.5 A
–
–
–
–
–
–
–
–
–
1.39
8
A
0.8
15
10
12
3
1.2
23
15
–
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
Q
rr
t
a
I
F
= 1.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
ns
Reverse recovery rise time
t
b
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0226-Rev. D, 08-Mar-2021
Document Number: 69958
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2308BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
4
3
2
1
0
V
= 10 V thru 5 V
GS
8
6
4
2
0
V
GS
= 4 V
T
C
= – 55 °C
T
C
= 125 °C
V
V
= 3 V
GS
T
C
= 25 °C
2.1
= 2 V
4
GS
0
1
2
3
5
0.0
0.7
V
1.4
2.8
3.5
V
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
0.30
0.24
0.18
0.12
0.06
300
240
180
120
60
C
iss
V
V
= 4.5 V
GS
= 10 V
GS
C
oss
C
rss
0
0
2
4
6
8
10
0
10
20
30
40
50
60
I
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
D
DS
On-Resistance vs. Drain Current
Capacitance
10
8
2.0
1.7
1.4
1.1
0.8
0.5
I
= 1.9 A
D
V
= 10
V
, I
=
1
.9 A
D
GS
V
DS
= 30 V
6
V
DS
= 48 V
V
= 4.5
V
, I
=
1
.7 A
GS D
4
2
0
0
1
2
3
4
5
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction
T
e
mperature (°C)
Q
g
–
T
o
tal Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
S21-0226-Rev. D, 08-Mar-2021
Document Number: 69958
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2308BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.35
0.30
0.25
0.20
0.15
0.10
10
I
= 1.9 A
D
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
1
T
= 25 °C
J
0.1
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
10
8
2.1
1.8
1.5
1.2
I
= 250 µA
D
T
= 25 °C
A
6
4
2
0
Single Pulse
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
Time (s)
T
J
–
T
e
mperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
Limited by R
*
DS(on)
100 µs
1
1 ms
10 ms
100 ms
0.1
1 s, 10 s
DC
T
= 25 °C
A
BVDSS Limited
10
Single Pulse
0.01
0.1
100
1
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area
S21-0226-Rev. D, 08-Mar-2021
Document Number: 69958
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2308BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3.0
2.4
1.8
1.2
0.6
0.0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperature (°C)
Current Derating
a
2.0
1.6
1.2
0.8
0.4
0.0
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
T –
Ambient
T
e
mperature (°C)
A
75
100
125
150
T
C
– Case
T
e
mperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S21-0226-Rev. D, 08-Mar-2021
Document Number: 69958
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2308BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
0.02
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 130 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S21-0226-Rev. D, 08-Mar-2021
Document Number: 69958
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
