Vishay-Intertech-SI2309CDS-T1-GE3
| Part # | Vishay-Intertech-SI2309CDS-T1-GE3 |
Download  | Vishay-Intertech-SI2309CDS-T1-GE3 |
New Product
Si2309CDS
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free Option Available
TrenchFET
®
Power MOSFET
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
I
D
(A)
d
•
0.345 at V
GS
= – 10 V
0.450 at V
GS
= – 4.5 V
– 1.6
– 1.4
– 60
2.7 nC
APPLICATIONS
Load Switch
•
TO-236
(SOT-23)
G
S
1
3
2
D
S
G
Top View
Si2309CDS
(N9)*
* Marking Code
D
Ordering Information:
Si2309CDS-T1-E3 (Lead (Pb)-free)
Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
– 60
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
– 1.6
– 1.3
Continuous Drain Current (T
J
= 150 °C)
a, b
I
D
– 1.2
a, b
– 1.0
a, b
– 8
A
I
DM
I
AS
Pulsed Drain Current (10 µs Pulse Width)
Single Pulse Avalanche Current
– 5
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
– 1.4
I
S
Continuous Source-Drain Diode Current
– 0.9
a, b
1.7
T
C
= 70 °C
A
= 25 °C
1.1
P
D
W
Maximum Power Dissipation
1.0
a, b
T
0.67
a, b
– 55 to 150
260
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
c
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Symbol
Typical
92
Maximum
120
Unit
R
thJA
t
≤
5 s
°C/W
R
thJF
Maximum Junction-to-Foot (Drain)
Steady State
58
73
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
d. When T
C
= 25 °C.
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
1
New Product
Si2309CDS
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 60
V
V
DS
T
e
mperature Coefficient
– 65
4.5
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= – 250 µA
– 1
– 6
– 3
– 100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 60
V
,
V
GS
= 0 V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≤
5
V
,
V
GS
= – 10 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 10
V
GS
= – 10
V
,
I
D
= – 1.25 A
0.285
0.360
2.8
0.345
0.450
Drain-Source On-State Resistance
a
Ω
S
V
GS
= – 4.5
V
,
I
D
= – 1.0 A
Forward
T
r
ansconductance
a
V
DS
= – 10
V
,
I
D
= – 1.0 A
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
210
28
20
2.7
0.8
1.2
7
V
DS
= – 30
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
4.1
Q
gs
Q
gd
R
g
V
DS
= – 30
V
,
V
GS
= – 4.5
V
,
I
D
= – 1.25 A
f = 1 MHz
nC
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
40
35
15
10
5
60
55
25
20
10
20
25
20
V
DD
= – 30
V
,
R
L
= 30
Ω
I
D
≅
– 1 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
10
15
10
V
DD
= – 30
V
,
R
L
= 30
Ω
I
D
≅
– 1 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 1.4
– 8
A
I
S
= – 0.75 A, V
GS
= 0 V
Body Diode Voltage
– 0.8
30
– 1.2
60
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Q
rr
t
a
33
60
I
F
= – 1.25 A, dI/dt = 100 A/µs, T
J
= 25 °C
18
ns
t
b
Reverse Recovery Rise Time
12
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
New Product
Si2309CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
1.5
1.0
0.5
0.0
8
V
= 10 thr
u
5
V
GS
6
4
2
0
V
= 4
V
GS
T
= 25 °C
C
V
GS
= 3
V
T
= 125 °C
2
C
T
C
= – 55 °C
4
0
1
3
5
0
1
2
3
4
5
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.
8
0.6
0.4
0.2
0.0
350
2
8
0
210
140
70
C
iss
V
GS
= 4.5
V
V
GS
= 10
V
C
oss
C
rss
0
0
2
4
6
8
0
15
30
45
60
I
– Drain C
u
rrent (A)
D
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2.0
1.7
1.4
1.1
0.
8
0.5
I
= 1.25 A
I
= 1.25 A
D
D
V
DS
= 30
V
8
6
4
2
0
V
GS
= 10
V
V
DS
= 15
V
V
GS
= 4.5
V
V
DS
= 45
V
0
1
2
3
4
5
– 50
– 25
0
25
50
75
100 125 150
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
–
T
o
tal Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
3
New Product
Si2309CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
2.0
1.6
1.2
0.
8
0.4
0.0
I
= 1.25 A
D
10
T
J
= 150 °C
T
= 25 °C
J
1
0.1
T
T
= 125 °C
T
J
= – 50 °C
J
0.01
0.001
= 25 °C
J
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
8
6
4
2
0
I
= 250
µ
A
D
T
A
= 25 °C
I
= 1 mA
D
0.2
0.0
– 0.2
– 0.4
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
J
–
T
e
mperat
u
re (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
10
µ
s
Limited
b
y R
DS(on)*
1
100
µ
s
1 ms
10 ms
0.1
100 ms
T
= 25 °C
A
1 s, 10 s
100 s, DC
Single P
u
lse
0.01
100
0.1
1
10
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
4
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
New Product
Si2309CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
0.1
0.05
P
DM
0.02
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 166 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
0.1
P
DM
0.05
0.02
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 73 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 68980
S-82584-Rev. A, 27-Oct-08
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
1
