Vishay-Intertech-SI2316DS-T1-GE3
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Si2316DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free Option Available
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
3.4
•
TrenchFET
®
Power MOSFET
P
b
-free
0.050 at V
GS
= 10 V
0.085 at V
GS
= 4.5 V
A
v
aila
b
le
30
2.6
RoHS*
APPLICATIONS
COMPLIANT
•
Battery Switch
TO-236
(SOT-23)
G
S
1
2
3
D
T
o
p View
Si2316DS (C6)*
* Marking Code
Ordering Information:
Si2316DS-T1
Si2316DS-T1-E3 (Lead (Pb)-free)
Si2316DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
V
GS
T
A
= 25 °C
T
A
= 70 °C
3.4
2.7
2.9
2.3
Continuous Drain Current (T
J
= 150 °C)
a, b
I
D
A
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
16
0.8
T
A
= 25 °C
T
A
= 70 °C
0.96
0.6
0.7
Power Dissipation
a, b
P
D
W
0.45
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
100
Maximum
130
Unit
t
≤
5 s
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
R
thJA
Steady State
Steady State
140
175
°C/W
R
thJF
60
75
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
b. Pulse width limited by maximum junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71798
S-80642-Rev. C, 24-Mar-08
1
Si2316DS
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
A
Limits
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
30
V
0.8
V
DS
= 0
V
,
V
GS
=
20 V
100
0.5
10
nA
µA
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
4.5
V
,
V
GS
= 10 V
V
DS
≥
4.5
V
,
V
GS
= 4.5 V
V
GS
= 10
V
,
I
D
= 3.4 A
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
6
4
I
D(on)
A
0.042
0.068
6.0
0.050
0.085
Drain-Source On-Resistance
a
R
DS(on)
Ω
V
GS
= 4.5
V
,
I
D
= 2.6 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
g
fs
V
DS
= 4.5
V
,
I
D
= 3.4 A
I
S
= 0.8 A, V
GS
= 0 V
S
V
V
SD
0.8
1.2
7
Dynamic
b
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Switching
4.3
0.65
1.2
215
90
V
DS
= 15
V
,
V
GS
= 10
V
,
I
D
= 3.4 A
nC
pF
V
DS
= 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
55
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
9
9
15
15
20
12
V
DD
= 15
V
,
R
L
= 15
Ω
ns
I
D
≅
1.0 A, V
GEN
= 10
V
,
R
G
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
14
6
Notes:
a. Pulse test; PW
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
16
14
12
10
8
16
14
12
10
8
V
= 10 thru 5 V
GS
4 V
6
6
3 V
2 V
4
4
T
= 125 °C
C
2
2
25 °C
– 55 °C
3
0
0
0
2
4
6
8
10
0
1
2
4
5
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Transfer Characteristics
Output Characteristics
2
Document Number: 71798
S-80642-Rev. C, 24-Mar-08
Si2316DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.5
350
300
250
200
150
100
50
0.4
0.3
0.2
C
iss
C
oss
V
= 4.5 V
C
rss
GS
0.1
0.0
V
= 10 V
14
GS
0
0
2
4
6
8
10
12
16
0
5
10
15
20
25
30
I
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
DS
D
On-Resistance vs. Drain Current
Capacitance
2.0
1.5
1.0
0.5
0.0
10
8
V
= 15 V
= 3.4 A
V
= 10 V
GS
DS
I
D
I =
3.4 A
D
6
4
2
0
0
1
2
3
4
5
– 50
– 25
0
T
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
– Junction Temperature
(
°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
0.5
0.4
0.3
0.2
0.1
0.0
30
10
T =
150 °C
J
I
D
= 3.4 A
1
T =
25 °C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71798
S-80642-Rev. C, 24-Mar-08
3
Si2316DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
10
8
0.2
I
D
= 250 µA
0.0
– 0.2
– 0.4
– 0.6
– 0.8
6
4
T
A
= 25 °C
2
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
–
T
e
mperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
0.02
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
4
Document Number: 71798
S-80642-Rev. C, 24-Mar-08
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
