Vishay-Intertech-SI2319DS-T1-E3
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Si2319DS
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D
(A)
b
– 3.0
V
DS
(V)
R
DS(on)
(
Ω
)
Available
•
TrenchFET
®
Power MOSFET
0.082 at V
GS
= – 10 V
0.130 at V
GS
= – 4.5 V
– 40
– 2.4
APPLICATIONS
•
Load Switch
TO-236
(SOT-23)
G
S
1
2
3
D
Top View
Si2319DS (C9)*
*Marking Code
Ordering Information:
Si2319DS-T1-E3 (Lead (Pb)-free)
Si2319DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
5 s
Steady State
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
– 40
20
V
V
GS
T
A
= 25 °C
A
= 70 °C
– 3.0
– 2.4
– 2.3
Continuous Drain Current (T
J
= 150 °C)
b
I
D
T
– 1.85
A
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
I
DM
I
S
– 12
– 1.0
1.25
0.8
– 0.62
0.75
T
A
= 25 °C
T
A
= 70 °C
Power Dissipation
b
P
D
W
0.48
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Ambient
c
Maximum Junction-to-Foot (Drain)
Symbol
Typical
75
Maximum
100
Unit
R
thJA
°C/W
120
40
166
R
thJF
50
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board, t
≤
5 s.
c. Surface Mounted on FR4 board.
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
1
Si2319DS
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Limits
Typ.
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 40
– 1
V
nA
µA
A
Gate Threshold Voltage
Gate-Body Leakage
– 3.0
100
– 1
V
DS
= 0
V
,
V
GS
=
20 V
V
DS
= – 40
V
,
V
GS
= 0 V
DS
= – 40
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≤
– 5
V
,
V
GS
= – 10 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
– 10
– 6
V
GS
=
– 10
V
,
I
D
= – 3.0 A
0.065
0.100
7.0
0.082
0.130
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
GS
= – 4.5
V
,
I
D
= – 2.4 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= – 5
V
,
I
D
= – 3.0 A
I
S
= – 1.25 A, V
GS
= 0 V
S
V
V
SD
– 0.8
– 1.2
17
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
11.3
1.7
3.3
470
85
V
DS
= – 20
V
,
V
GS
= – 10 V
nC
pF
I
D
≅
– 3 A
V
DS
= – 20
V
,
V
GS
= 0
V
, f = 1
M
Hz
65
Switching
c
t
d(on)
t
r
t
d(off)
t
f
7
15
25
40
40
T
u
rn-On Time
V
DD
= – 20
V
,
R
L
= 20
Ω
15
25
25
I
D
≅
– 1.0 A, V
GEN
= – 4.5 V
R
g
= 6
Ω
ns
T
u
rn-Off Time
Notes:
a. Pulse test: PW
≤
300 µs duty cycle
≤
2 %.
b. For design aid only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
Si2319DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
12
10
8
20
V
GS
= 10 V thru 5 V
16
12
8
4 V
6
4
T
= 125 °C
C
4
1 V, 2 V
2
25 °C
3 V
– 55 °C
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
0
0
2
4
6
8
10
12
12
V
GS
– Gate-to-Source Voltage (V)
V
– Drain-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
0.20
0.16
0.12
0.08
0.04
0.00
800
700
600
500
400
300
200
100
0
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
2
4
6
8
10
0
5
10
15
20
25
30
35
40
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 20 V
= 3 A
V
I
= 10 V
DS
GS
= 3 A
D
D
6
4
2
0
2
4
6
8
10
– 50
– 25
0
25
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
T –
Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
3
Si2319DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
= 150 °C
J
I
D
= 3 A
1
T
= 25 °C
J
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
10
8
0.2
6
I
D
= 250
µ
A
0.0
4
T
A
= 25 °C
Single Pulse
– 0.2
– 0.4
2
0
0.01
0.1
1
10
100
1000
– 50
– 25
0
25
50
75
100 125 150
T
– Temperature (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power
100.0
Limited by
R
*
DS(on)
10.0
1.0
10 µs
100 µs
1 ms
10 ms
0.1
100 ms
T
= 25 °C
10 s, 1 s
100 s, DC
A
Single Pulse
0.01
0.1
1
10
100
V
– Drain-to-Source Voltage (V)
DS
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Case
4
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
Si2319DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
5
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
