Vishay-Intertech-SI2324DS-T1-GE3
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Si2324DS
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
•
•
•
•
TrenchFET
®
Power MOSFET
I
D
(A)
a
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
100 % R
Tested
100 % UIS Tested
Material categorization:
g
0.234 at V
GS
= 10 V
0.267 at V
GS
= 6 V
0.278 at V
GS
= 4.5 V
2.3
100
2.1
2.9 nC
For definitions of compliance please see
1.7
APPLICATIONS
TO-236
(SOT-23)
•
•
•
DC/DC Converters
Load Switch
LED Backlighting in LCD TVs
G
S
1
2
3
D
Top
V
ie
w
Si2324DS (D4)*
* Markin
g
Code
Orderin
g
Information:
Si2324DS-T1-GE3 (Lead (P
b
)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
100
Unit
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
V
20
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
2.3
1.8
Continuous Drain Current (T
J
= 150 °C)
I
D
1.6
b, c
1.3
b, c
5
T
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current (t = 300 µs)
T
C
= 25 °C
2.1
Continuous Source-Drain Diode Current
1.0
b, c
5
T
A
= 25 °C
L = 0.1 mH
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
I
AS
E
AS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
mJ
W
1.25
2.5
T
1.6
P
D
Maximum Power Dissipation
1.25
b, c
0.8
b, c
– 55 to 150
T
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
R
thJA
Typical
75
Maximum
Unit
5 s
Steady State
100
50
°C/W
R
thJF
40
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 166 °C/W.
Document Number: 67691
S12-1140-Rev. B, 21-May-12
1
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Si2324DS
Vishay Siliconix
MOSFET SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
= 0
V
,
I
D
= 250 µA
Drain-Source Breakdown Voltage
100
V
V
DS
T
e
mperature Coefficient
V
DS
/T
J
105
mV/°C
I
D
= 250 µA
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
/T
– 5.2
GS(th) J
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
1.2
5
2.8
100
– 1
V
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= 100
V
,
V
GS
= 0 V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
5
V
,
V
GS
= 4.5 V
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 10
I
D(on)
V
GS
= 10
V
,
I
D
= 1.5 A
0.195
0.222
0.231
2.0
0.234
0.267
0.278
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 6
V
,
I
D
= 1 A
V
GS
= 4.5
V
,
I
D
= 0.5 A
Forward
T
r
ansconductance
a
g
fs
V
DS
= 20
V
,
I
D
= 1.5 A
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
190
22
13
5.2
2.9
0.75
1.4
1.4
30
26
17
12
6
V
DS
= 50
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= 50
V
,
V
GS
= 10
V
,
I
D
= 1.6 A
DS
= 50
V
,
V
GS
= 4.5
V
,
I
D
= 1.6 A
f = 1 MHz
10.4
5.8
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
V
0.3
2.8
45
39
26
20
12
20
20
12
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50
V
,
R
L
= 39
I
D
= 1.3 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
10
10
6
V
DD
= 50
V
,
R
L
= 39
I
D
= 1.3 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 1.3 A
Continuous Source-Drain Diode Current
– 2.1
– 20
– 1.2
33
A
Pulse Diode Forward Current
a
Body Diode Voltage
– 0.8
22
21
16
6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
32
I
F
= 1.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 67691
S12-1140-Rev. B, 21-May-12
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Si2324DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5
3
2.4
1.8
1.2
0.6
0
V
GS
= 10 V thru 5 V
V
GS
= 4 V
4
3
2
T
C
= 25
°
C
1
0
V
GS
= 3 V
T
C
= 125
°
C
T
C
= – 55
°
C
0
0.5
1
1.5
2
0
1
2
3
4
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
300
240
180
120
60
0.28
0.26
0.24
0.22
0.20
0.18
0.16
V
GS
= 4.5 V
C
iss
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
0
1
2
3
4
5
0
20
40
60
80
100
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
10
8
2.2
1.75
1.3
I
D
= 1.6 A
I
D
= 1.5 A
V
DS
= 25 V
V
GS
= 6 V
6
V
DS
= 50 V
4
V
DS
= 80 V
0.85
0.4
2
V
GS
= 10 V
0
0
– 50
– 25
25
50
75
100 125 150
0
1.5
3
4.5
6
T
J
– Junction Temperature (
°
C)
Q
g
– Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 67691
S12-1140-Rev. B, 21-May-12
3
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Si2324DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.6
I
D
= 1.5 A
0.45
0.3
0.15
0
T
J
= 150
°
C
T
J
= 125
°
C
1
T =
25
°
C
T
J
= 25
°
C
0.1
2
4
6
8
10
0.0
0.3
0.6
0.9
1.2
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
2.8
2.5
2.2
1.9
1.6
10
8
6
I
D
= 250 μA
4
2
T =
25 °C
A
0
0.01
– 50
– 25
0
25
50
75
100 125 150
0.1
1
10
100
1000
T
J
– Temperature (
°
C)
Time (s)
Single Pulse Power
Threshold Voltage
10
Limited by R
DS(on)
*
100 μs
1
0.1
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
T
A
= 25
°
C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
4
Document Number: 67691
S12-1140-Rev. B, 21-May-12
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Si2324DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.8
2.1
1.4
0.7
0.0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
3
2.4
1.8
1.2
0.6
0
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
T
C
– Case Temperature (
°
C)
Power, Junction-to-Ambient
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67691
S12-1140-Rev. B, 21-May-12
5
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Si2324DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 166 °C/
W
thJA
(t)
= P
Z
3. T
– T
A
DM thJA
JM
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 67691
S12-1140-Rev. B, 21-May-12
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
1
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
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to the warranty expressed therein.
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
Document Number: 91000
1
