Vishay-Intertech-SI2336DS-T1-GE3
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Si2336DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET
®
Power MOSFET
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
I
D
(A)
a
5.2
100 % R
g
Tested
Material categorization:
0.042 at V
GS
= 4.5 V
0.046 at V
GS
= 2.5 V
0.052 at V
GS
= 1.8 V
For definitions of compliance please see
30
4.9
5.7 nC
4.1
APPLICATIONS
TO-236
(SOT-23)
D
•
DC/DC Converters
•
Boost Converters
G
S
1
2
3
D
G
Top
V
ie
w
Si2336DS (
N
4)*
S
* Marking Code
Orderin
g
Information:
Si2336DS-T1-GE3 (Lead (P
b
)-free and Halogen-free)
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
30
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
8
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
5.2
4.1
Continuous Drain Current (T
J
= 150 °C)
I
D
4.3
b, c
3.5
b, c
20
T
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
1.5
Continuous Source-Drain Diode Current
1
b, c
1.8
T
C
= 70 °C
1.1
P
D
Maximum Power Dissipation
W
1.25
b, c
0.8
b, c
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
d, e
– 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
Typical
80
Maximum
100
Unit
R
thJA
R
thJF
t
5 s
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
55
70
Notes:
a. T
C
= 25 °C.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 130 °C/W.
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
1
Si2336DS
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS
T
e
mperature Coefficient
31
mV/°C
V
GS(th)
T
e
mperature Coefficient
– 2.7
V
DS
= V
GS
, I
D
= 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
0.4
10
1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
8 V
100
1
nA
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
5
V
,
V
GS
= 10 V
V
GS
4.5
V
,
I
D
= 3.8 A
V
GS
2.5
V
,
I
D
= 3.6 A
V
GS
1.8
V
,
I
D
= 2 A
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
10
I
D(on)
0.034
0.038
0.041
30
0.042
0.046
0.052
Drain-Source On-State Resistance
a
R
DS(on)
Forward
T
r
ansconductance
a
g
fs
V
DS
= 15
V
,
I
D
= 3.8 A
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
560
60
27
10
5.7
0.85
0.75
3
V
DS
= 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
DS
= 15
V
,
V
GS
= 8
V
,
I
D
= 3.4 A
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
15
Q
g
T
o
tal Gate Charge
8.6
nC
Q
gs
Q
gd
R
g
V
DS
= 15
V
,
V
GS
= 4.5
V
,
I
D
= 3.4 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
0.6
6
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
6
12
20
40
20
10
20
30
20
Rise Time
10
20
10
5
V
DD
= 15
V
,
R
L
= 4.3
I
D
3.5 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
10
17
10
V
DD
= 15
V
,
R
L
= 4.3
I
D
3.5 A, V
GEN
= 8
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
1.5
20
A
I
S
= 3.5 A, V
GS
0 V
0.8
15
6
1.2
30
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
12
I
F
= 3.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
8
ns
t
b
7
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
Si2336DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
20
V
= 5 V thru 2 V
GS
16
12
8
V
= 1.5 V
GS
6
4
T
= 25 °C
C
2
4
V
= 1 V
T
= 125 °C
0.6
GS
C
V
= 0.5 V
GS
T
= – 55 °C
C
0
0
0
0.3
0.9
1.2
1.5
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.06
0.05
0.04
0.03
0.02
800
600
400
200
0
C
iss
V
= 1.8 V
GS
V
= 2.5 V
V
GS
= 4.5 V
GS
C
oss
C
rss
0
4
8
12
16
20
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 4.5
V
, V
= 2.5 V
GS
GS
I =
3.8 A
D
I
= 4.3 A
D
6
4
2
0
V
= 7.5 V
DS
V
= 1.8 V
GS
V
= 24 V
DS
V
= 15 V
DS
0
2
4
6
8
10
– 50
– 25
0
25
T
J
– Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
Gate Charge
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
3
Si2336DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.10
100
I
= 3.8 A
D
0.08
0.06
0.04
0.02
0
T
= 150 °C
J
10
T
= 125 °C
= 25 °C
J
T
T
= 25 °C
J
J
1
0.1
0
1
2
3
4
5
0
0.2
0.4
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.8
1.0
1.2
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
40
30
20
10
0
I
= 250 μA
D
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
T
J
– Temperature (°C)
Single Pulse Power
Threshold Voltage
100
Limited by R
*
DS(on)
10
1
100 μs
1 ms
10 ms
100 ms
0.1
1 s, 10 s
DC
T
= 25 °C
A
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
Si2336DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
6
2.0
1.6
1.2
0.
8
0.4
0.0
5
Package Limited
4
3
2
1
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
C
– Case
T
e
mperat
u
re (°C)
Power Derating
Current Derating*
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
5
Si2336DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 130 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 71978
S13-0630-Rev. B, 25-Mar-13
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
