Vishay-Intertech-SI2337DS-T1-GE3
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Si2337DS
Vishay Siliconix
P-Channel 80-V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
a
-2.2
Q
g
(TYP.)
• Material categorization:
for definitions of compliance please see
0.270 at V
GS
= -10 V
0.303 at V
GS
= -6 V
-80
7
-2.1
S
OT-2
3
(TO-2
3
6)
Available
S
D
3
G
2
S
1
G
D
Top View
P-Channel MOSFET
Marking Code:
E7
Ordering Information:
Si2337DS-T1-E3 (Lead (Pb)-free)
Si2337DS-T1-GE3 (Lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
V
DS
LIMIT
-80
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
C
= 25 °C
C
= 70 °C
-2.2
T
-1.75
-1.2
b, c
-0.96
b, c
-7
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
A
Pulsed Drain Current
I
DM
I
S
T
C
= 25 °C
-2.1
-0.63
b, c
Continuous Source-Drain Diode Current
T
A
= 25 °C
Avalanche Current
I
AS
11
L = 0.1 mH
Single-Pulse Avalanche Energy
E
AS
6
mJ
W
T
C
= 25 °C
C
= 70 °C
2.5
T
1.6
Maximum Power Dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
0.76
b, c
0.48
b, c
-50 to +150
260
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, d
SYMBOL
R
thJA
TYPICAL
MAXIMUM
UNIT
t
≤
10 s
120
40
166
50
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
Notes
a. Package
limited.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under Steady State conditions is 166 °C/W.
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2337DS
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Δ
V
DS
/T
J
Δ
VG
S(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
-80
–
–
–
–
V
V
DS
Temperature Coefficient
-35.8
mV/°C
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
–
5.45
–
V
DS
= V
GS
, I
D
= -250 μA
-2
–
–
-4
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
100
-1
nA
V
DS
= -80 V, V
GS
= 0 V
V
DS
= -80 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= -10 V
–
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
-10
–
-7
–
–
V
GS
= -10 V, I
D
= -1.2 A
V
GS
= -6 V, I
D
= -1.1 A
0.216
0.242
4.3
0.270
0.303
–
Drain-Source On-State Resistance
a
Ω
S
–
Forward Transconductance
a
Dynamic
b
V
DS
= -15 V, I
D
= -1.2 A
–
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
500
40
25
11
7
–
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -40 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -40 V, V
GS
= -10 V, I
D
= -1.2 A
V
DS
= -40 V, V
GS
= -6 V, I
D
= -1.2 A
f = 1 MHz
–
pF
–
17
11
–
Total Gate Charge
Q
g
nC
Gate-Source Charge
Q
gs
Q
gd
R
g
2.1
3.2
4.8
10
15
20
15
15
18
20
12
Gate-Drain Charge
–
Gate Resistance
–
Ω
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
15
23
30
23
23
27
30
18
Rise Time
V
DD
= -40 V, R
L
= 42
Ω
I
D
≅
-0.96 A, V
GEN
= -10 V, R
g
= 1
Ω
Turn-Off Delay Time
Fall Time
ns
Turn-On Delay Time
Rise Time
V
DD
= -40 V, R
L
= 42
Ω
I
D
≅
-0.96 A, V
GEN
= -6 V, R
g
= 1
Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 0.63 A
–
–
–
–
–
–
–
–
–
-2.1
-7
A
-0.8
30
45
25
5
-1.2
45
70
–
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= 0.63 A, dI/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
7
7
6
5
4
3
2
1
0
V
GS
= 10 thru 6 V
6
5
4
3
2
1
0
V
GS
= 5 V
T
A
= – 55 °C
T
A
= 25 °C
T
A
= 125 °C
V
GS
= 4 V
0.0
1.0
2.0
3.0
4.0
5.0
0
1
2
3
4
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
0.25
0.20
0.15
0.10
700
600
500
400
300
200
100
0
C
iss
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
1
2
3
4
5
6
7
0
10
20
30
40
50
60
70
80
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
8
I
D
= 1.2 A
I
D
=1.2 A
V
GS
= 10 V
V
DS
= 40 V
V
= 6 V
GS
6
V
DS
= 64 V
4
2
0
0
2
4
6
8
10
12
– 50
– 25
0
25
50
75
100 125 150
Q
g
–
T
o
tal Gate Charge (nC)
T –
Junction
T
e
mperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73533
S15-0683-Rev. E, 06-Apr-15
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
0.6
0.5
0.4
0.3
0.2
0.1
I
D
= 1.2 A
10
T
J
= 150 °C
T
A
= 125 °C
T
J
= 25 °C
1
T
A
= 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
16
14
12
10
8
I
D
= 250 µA
6
4
2
0
0.01
– 50
– 25
0
25
50
75
100 125 150
0.1
1
10
Time (s)
100
1000
T
J
–
T
e
mperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited
b
y R
DS(on)
*
I
DM
Limited
10
I
D(on)
Limited
1 ms
1
10 ms
100 ms
0.1
1 s
10 s
0.01
0.001
DC
T
= 25 °C
A
Single Pulse
BVDSS Limited
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Case
T
e
mperature (°C)
T
C
– Case
T
e
mperature (°C)
Current Derating*
Power Derating
10
L
I
A
T
A
BV
V
–
DD
1
1.0E-6
10.0E-6
100.0E-6
1.0E-3
10.0E-3
T
A
– Time In A
v
alanche (s)
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2337DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
0.02
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
3. T
– T
= P
Z
JM DM
thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wa
v
e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wa
v
e Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
S15-0683-Rev. E, 06-Apr-15
Document Number: 73533
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
1
AN807
Vishay Siliconix
Mounting LITTLE FOOT
R
SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFE
T
s use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
See Application Note 826,
Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint .
In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1.
Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple.
Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain.
As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board.
The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally.
Also, heat spreads
in a circular fashion from the heat source.
In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used.
Even if additional planar copper area is used,
there should be no problems in the soldering process.
The actual
solder connections are defined by the solder mask openings.
By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
Figure 1 shows the
footprint with copper spreading for the SOT-23
package. This
pattern shows the starting point for utilizing the
board area available for the heat spreading copper.
T
o
c
reate this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
A final item to keep in mind is the width of the power traces.
The
absolute minimum power trace width must be determined by the
amount of current it has to carry.
For thermal reasons, this
minimum width should be at least 0.020 inches.
The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
Document Number:
70739
26-Nov-03
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
Document Number: 91000
1
