Vishay-Intertech-SI2367DS-T1-GE3
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Si2367DS
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
S
OT-2
3
(TO-2
3
6)
D
3
• 100 % R
g
tested
• Material categorization:
for definitions of compliance please see
2
S
APPLICATIONS
• Load switch for portable devices
• DC/DC converter
1
G
S
Top View
Marking code:
H7
PRODUCT SUMMARY
V
DS
(V)
G
-20
R
R
R
DS(on)
max. (
) at V
GS
= -4.5 V
DS(on)
max. (
) at V
GS
= -2.5 V
DS(on)
max. (
) at V
GS
= -1.8 V
0.066
0.086
0.130
9
D
Q
g
typ. (nC)
d
P-Channel MOSFET
I
D
(A)
-3.8
Configuration
Single
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and halogen-free
Si2367DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-20
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
V
GS
8
T
T
C
= 25 °C
C
= 70 °C
-3.8
-3
Continuous drain current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
-2.8
a, b
-2.2
a, b
-15
A
Pulsed drain current (10 μs width)
I
DM
I
S
T
C
= 25 °C
-1.4
-0.8
a, b
Continuous source-drain diode current
T
A
= 25 °C
T
T
C
= 25 °C
C
= 70 °C
1.7
1.1
Maximum power dissipation
P
D
W
T
A
= 25 °C
T
A
= 70 °C
0.96
a, b
0.62
a, b
-55 to +150
Operating junction and storage temperature range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
a, c
SYMBOL
R
thJA
TYPICAL
MAXIMUM
UNIT
t
5 s
100
60
130
75
°C/W
Maximum junction-to-foot (drain)
Steady state
R
thJF
Notes
a. Surface
mounted on 1″ x 1″ FR4 board
b. t
= 5 s
c. Maximum
under steady state conditions is 175 °C/W
d. T
C
= 25 °C
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2367DS
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
-20
–
–
–
V
V
DS
temperature coefficient
–
-20
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
–
-2.5
–
V
DS
= V
GS
, I
D
= -250 μA
-0.4
–
-1
V
I
GSS
V
DS
= 0 V, V
GS
=
8 V
–
–
–
–
100
-1
nA
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -4.5 V
Zero gate voltage drain current
On-state drain current
a
I
DSS
μA
A
–
–
-10
–
I
D(on)
-5
–
–
V
GS
= -4.5 V, I
D
= -2.5 A
0.055
0.071
0.100
7.5
0.066
0.086
0.130
–
Drain-source on-state resistance
a
R
DS(on)
g
fs
V
GS
= -2.5 V, I
D
= -2 A
–
V
GS
= -1.8 V, I
D
= -1.5 A
–
Forward transconductance
a
Dynamic
b
V
DS
= -10 V, I
D
= -2.5 A
–
S
Input capacitance
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
2
–
–
–
–
–
–
–
–
561
112
89
15
9
–
–
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -8 V, I
D
= -2.5 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -2.5 A
f = 1 MHz
Output capacitance
Reverse transfer capacitance
pF
–
23
13.5
–
Total gate charge
Q
g
nC
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Q
gs
Q
gd
R
g
1
2.5
10
20
20
40
10
8
–
20
40
40
70
20
16
18
65
18
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -10 V, R
L
= 5
,
I
D
-2 A, V
GEN
= -4.5 V, R
g
= 1
Turn-off delay time
Fall time
ns
Turn-on delay time
Rise time
9
V
DD
= -10 V, R
L
= 5
,
I
D
-2 A, V
GEN
= -8 V, R
g
= 1
Turn-off delay time
Fall time
35
9
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
T
C
= 25 °C
I
S
I
SM
V
SD
t
rr
–
–
–
–
–
–
–
–
–
-1.4
-15
-1.2
35
25
–
A
I
S
= -2 A, V
GS
= 0 V
Body diode voltage
-0.79
21
15
9
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
Q
rr
t
a
I
F
= -2 A, di/dt = 100 A/μs,
T
J
= 25 °C
ns
Reverse recovery rise time
t
b
12
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed
by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2367DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
2.5
2.0
1.5
1.0
0.5
0.0
V
= 5 V thru 2.5 V
GS
12
9
V
= 2 V
GS
6
T
= 25 °C
C
V
= 1.5 V
GS
3
T
= 125 °C
0.4
C
V
= 0.5
V
, 1 V
1.8
GS
T
= -55 °C
C
0
0.0
0.6
1.2
2.4
3.0
0.0
0.8
1.2
1.6
2.0
V
– Drain-to-
S
ource Voltage (V)
D
S
V
–
G
ate-to-
S
ource Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.20
0.16
0.12
0.08
0.04
0.00
1200
960
720
480
240
0
V
= 1.8 V
V
GS
C
i
ss
= 2.5 V
= 4.5 V
GS
V
GS
C
o
ss
C
r
ss
0.0
1.6
3.2
4.8
6.4
8.0
0
4
8
12
16
20
V
– Drain-to-
S
ource Voltage (V)
I
– Drain Current (A)
D
S
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8.0
1.6
1.4
1.2
1.0
0.8
0.6
I
= 2.5 A
I
= -2.5 A
D
D
6.4
4.8
3.2
1.6
0.0
V
= -4.5 V
GS
V
= 5 V
D
S
V
= 10 V
D
S
V
= -1.8 V
GS
V
= 15 V
D
S
0.0
3.4
6.8
10.2
13.6
17.0
-50 -25
0
T
25
50
75
100 125 150
– Junction
T
e
mperature (°C)
Q
–
T
o
tal
G
ate Charge (nC)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2367DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.30
0.24
0.18
0.12
0.06
0.00
10
I
= 2.5 A
D
1
T
= 25 °C
J
T
= 150 °C
J
0.1
T
T
= 125 °C
J
J
0.01
= 25 °C
4
0.001
0
1
2
3
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
–
S
ource-to-Drain Voltage (V)
V
–
G
ate-to-
S
ource Voltage (V)
S
D
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.3
30
24
18
12
6
I
= -250 μA
D
0.2
I
= -5 mA
D
0.1
0.0
-0.1
-0.2
0
-50 -25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (
s
)
T
–
T
e
mperature (°C)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
D
S
(on)
10
1
1 m
s
10 m
s
100 m
s
1
s
, 10
s
DC
0.1
T
= 25 °C
A
BVD
SS
limited
s
ingle pul
s
e
0.01
0.01
100
0.1
1
10
V
– Drain-to-
S
ource Voltage (V)
D
S
* V
> minimum V
at which R
i
s s
pecified
GS
GS
D
S
(on)
Safe Operating Area, Junction-to-Ambient
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2367DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4.5
2.0
1.6
1.2
0.8
0.4
0.0
3.6
2.7
1.8
0.9
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Ca
s
e
T
e
mperature (°C)
T
– Ca
s
e
T
e
mperature (°C)
C
C
Current Derating
a
Power Derating, Junction-to-Foot
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T
A
– Ambient
T
e
mperature (°C)
Power, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si2367DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty cycle = 0.5
0.2
0.1
0.1
Note
s
:
P
DM
0.05
t
1
0.02
t
2
t
1
1. Duty cycle, D =
t
2
2. Per unit ba
s
e = R
= 175 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
S
ingle pul
s
e
4.
S
urface mounted
0.01
10
-4
-3
-2
-1
10
10
10
1
100
1000
10
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
S
ingle pul
s
e
0.01
-4
-3
-2
-1
10
10
10
10
1
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S09-1218-Rev. A, 29-Jun-09
Document Number: 65015
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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or by any conduct of Vishay.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
