Vishay-Intertech-SI3493DDV-T1-GE3
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Si3493DDV
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen III p-channel power MOSFET
T
S
OP-6
S
in
g
le
S
4
• R
DS(on)
rating at V
GS
= -1.8 V
D
5
D
6
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
3
G
2
D
APPLICATIONS
1
D
S
• Battery management in mobile devices
• Battery switch
Top View
Marking code:
BQ
G
• Load switch
PRODUCT SUMMARY
V
DS
(V)
• PA switch
-20
0.0240
0.0321
0.0511
19.8
R
DS(on)
max. (
) at V
GS
= -4.5 V
R
DS(on)
max. (
) at V
GS
= -2.5 V
R
DS(on)
max. (
) at V
GS
= -1.8 V
Q
g
typ. (nC)
D
P-Channel MO
S
FET
I
D
(A)
a, d
-8
Configuration
Single
ORDERING INFORMATION
Package
TSOP-6
Lead (Pb)-free and halogen-free
Si3493DDV-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-20
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
V
GS
8
T
C
= 25 °C
C
= 70 °C
-8
a
T
-8
Continuous drain current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
-7.5
b, c
-6
b, c
-32
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
T
A
= 25 °C
-3
Continuous source-drain diode current
-1.67
b, c
Single pulse avalanche current
Single pulse avalanche energy
I
AS
-10
L = 0.1 mH
E
AS
5
mJ
W
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
3.6
2.3
Maximum power dissipation
P
D
2
b, c
1.3
b, c
-55 to +150
Operating junction and storage temperature range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b
SYMBOL
R
thJA
TYPICAL
MAXIMUM
62.5
UNIT
t
5 s
Steady state
50
28
°C/W
Maximum junction-to-case (drain)
R
thJC
35
Notes
a. Package
limited.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 110 °C/W.
S16-2645-Rev. A, 26-Dec-16
Document Number: 74735
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si3493DDV
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
-20
–
–
V
V
DS
temperature coefficient
–
-12
–
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
–
2.5
–
-1
V
DS
= V
GS
, I
D
=-250 μA
-0.4
–
V
I
GSS
V
DS
= 0 V, V
GS
=
8 V
–
–
–
100
-1
nA
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-10 V, V
GS
= -4.5 V
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
μA
A
–
-10
I
D(on)
-20
–
–
–
V
GS
= -4.5 V, I
D
= -7.5 A
0.0200
0.0257
0.0378
30
0.0240
0.0321
0.0511
–
Drain-source on-state resistance
a
R
DS(on)
g
fs
V
GS
= -2.5 V, I
D
= -6.4 A
–
V
GS
= -1.8 V, I
D
= -2 A
–
Forward transconductance
a
Dynamic
b
V
DS
= -10 V, I
D
= -7.5 A
–
S
Input capacitance
C
iss
C
oss
C
rss
–
1825
210
200
34.8
19.8
2.6
3
–
–
Output capacitance
Reverse transfer capacitance
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -8 V, I
D
= -7.5 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -7.5 A
f = 1 MHz
–
pF
–
–
–
52.2
30
–
Total gate charge
Q
g
–
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
R
g
–
–
–
Gate resistance
2.12
10.6
25
21.2
38
45
145
60
16
30
173
60
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
–
Rise time
30
V
DD
= -10 V, R
L
= 1.67
, I
D
-6 A,
V
GEN
= -4.5 V, R
g
= 1
Turn-off delay time
95
Fall time
40
ns
Turn-on delay time
8
Rise time
20
V
DD
= -10 V, R
L
= 1.67
, I
D
-6 A,
V
GEN
= -8 V, R
g
= 1
Turn-off delay time
115
40
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
–
-8
-32
-1.2
32
18
–
A
I
S
= -6 A, V
GS
= 0 V
-0.8
21
9
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= -6 A, dI/dt = 100 A/μs, T
J
= 25 °C
9
ns
t
b
12
–
Notes
a. Pulse
test; pulse width
300 ꢀs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2645-Rev. A, 26-Dec-16
Document Number: 74735
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si3493DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
32
24
16
8
10000
1000
100
60
50
40
30
20
10
0
10000
1000
100
V
GS
= 5 V thru 2.5 V
T
C
= 25 °C
V
GS
= 2 V
V
GS
= 1.5 V
T
C
= 125 °C
1
T
C
= -55 °C
2
0
10
10
0
0.5
1
1.5
2
0
3
4
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.06
0.05
0.04
0.03
0.02
0.01
0
10000
1000
100
2800
2100
1400
700
0
10000
1000
100
V
GS
= 1.8 V
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
C
rss
10
10
0
8
16
24
32
0
5
10
15
20
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
5
4
3
2
1
0
10000
1000
100
1.5
1.3
1.1
0.9
0.7
10000
1000
100
V
GS
= 4.5 V, I
D
= 7.5 A; V
GS
= 2.5 V, I
D
= 6.4 A
V
DS
= 10 V
I
D
= 7.5 A
V
DS
= 5 V
V
GS
= 1.8 V, 2 A
V
DS
= 16 V
10
10
0
7
14
21
28
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-2645-Rev. A, 26-Dec-16
Document Number: 74735
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si3493DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
10000
1000
100
0.06
0.05
0.04
0.03
0.02
0.01
0
10000
T
J
= 150 °C
1000
1
T
J
= 25 °C
T
J
= 150 °C
0.1
100
T
J
= 25 °C
0.01
0.001
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
45
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10000
1000
100
I
D
= 250 μA
36
27
18
9
10
0
-50 -25
0
25
50
75 100
125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (°C)
2nd line
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
I
DM
limited
(1)
Limited by R
DS(on)
10
100 μs
1000
100
10
1 ms
1
10 ms
100 ms
10 s, 1 s
DC
0.1
BVDSS limited
10
T
A
= 25 °C
Single pulse
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
(1)
V
GS
Safe Operating Area, Junction-to-Ambient
S16-2645-Rev. A, 26-Dec-16
Document Number: 74735
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si3493DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
12
10000
1000
100
9
6
3
0
10
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
Current Derating
a
Axis Title
Axis Title
4.5
3.6
2.7
1.8
0.9
0
10000
1000
100
1.5
1.2
0.9
0.6
0.3
0
10000
1000
100
10
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
T
A
– Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2645-Rev. A, 26-Dec-16
Document Number: 74735
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si3493DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
0.02
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S16-2645-Rev. A, 26-Dec-16
Document Number: 74735
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
5
4
3
6
1
4
E
1
E
E
1
E
1
2
2
3
-B-
-B-
e
e
b
b
M
M
C
0.15
C
B
A
0.15
B A
5-LEAD TSOP
6-LEAD TSOP
4x
1
-A-
D
0.17 Ref
c
R
R
A
2
A
L
2
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
L
0.0
8
C
A
1
-C-
(L )
1
4x
1
MILLIMETERS
INCHES
Dim
A
A
1
A
2
b
c
D
E
E
1
e
Min
Nom
–
Max
Min
0.036
0.0004
0.035
0.012
0.004
0.116
0.106
0.061
Nom
–
Max
0.91
0.01
0.90
0.30
0.10
2.95
2.70
1.55
1.10
0.10
1.00
0.45
0.20
3.10
2.9
8
1.70
0.043
0.004
0.039
0.01
8
0.00
8
0.122
0.117
0.067
–
–
–
0.32
0.15
3.05
2.
8
5
1.65
0.95 B
S
C
1.90
–
0.03
8
0.013
0.006
0.120
0.112
0.065
0.0374 B
S
C
0.075
–
1.
8
0
2.00
0.50
0.071
0.012
0.079
0.020
e
1
L
0.32
0.60 Ref
0.25 B
S
C
–
0.024 Ref
0.010 B
S
C
–
L
1
L
2
R
0.10
0
–
0.004
0
–
4
8
4
8
7
Nom
7 Nom
1
ECN: C-06593-Rev.
I, 1
8
-Dec-06
DWG: 5540
Document Number: 71200
18-Dec-06
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
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including but not limited to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
