Vishay-Intertech-SI4134DY-T1-E3
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Si4134DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• Material categorization:
V
DS
(V)
R
DS(on)
(
Ω
) MAX.
0.0140 at V
GS
= 10 V
0.0175 at V
GS
= 4.5 V
I
D
(A)
a
14
Q
g
(TYP.)
30
7.3 nC
12.5
for definitions of compliance please see
Available
S
O-8
S
in
g
le
D
5
APPLICATIONS
D
6
• DC/DC conversion
– Notebook system power
D
D
7
D
8
4
G
G
3
S
2
S
Top View
S
N-Channel MOSFET
Ordering Information:
Si4134DY-T1-E3 (lead (Pb)-free)
Si4134DY-T1-GE3 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
30
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
C
= 70 °C
14
T
11.2
9.9
b, c
7.9
b, c
50
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
A
Pulsed Drain Current (t = 300 μs)
I
DM
I
S
T
C
= 25 °C
4.1
2
b, c
Continuous Source-Drain Diode Current
T
A
= 25 °C
Single Pulse Avalanche Current
Avalanche Energy
I
AS
15
L = 0.1 mH
E
AS
11.25
5
mJ
W
T
C
= 25 °C
C
= 70 °C
T
3.2
Maximum Power Dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
2.5
b, c
1.6
b, c
-55 to +150
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient
b, d
t
≤
10 s
Steady State
R
thJA
R
thJF
38
20
50
25
°C/W
Maximum Junction-to-Foot (Drain)
Notes
a. Based
on T
C
= 25 °C.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under steady state conditions is 85 °C/W.
S15-2154-Rev. D, 07-Sep-15
Document Number: 68999
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4134DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
30
–
–
–
V
V
DS
Temperature Coefficient
33
–
mV/°C
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
–
-5
–
V
DS
= V
GS
, I
D
= 250 μA
1.2
–
1.8
2.5
V
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
100
nA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
–
–
1
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
–
–
–
10
20
–
–
V
GS
= 10 V, I
D
= 10 A
0.0115
0.0145
24
0.0140
0.0175
–
Drain-Source On-State Resistance
a
Ω
S
V
GS
= 4.5 V, I
D
= 7 A
–
Forward Transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 10 A
–
Input Capacitance
C
iss
C
oss
C
rss
–
–
846
187
72
15.4
7.3
2.3
2.2
0.8
15
12
13
10
9
–
–
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
pF
–
–
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
–
23
11
–
Total Gate Charge
Q
g
–
nC
Gate-Source Charge
Q
gs
Q
gd
R
g
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
f = 1 MHz
–
Gate-Drain Charge
–
–
Gate Resistance
0.2
–
1.6
30
24
26
20
18
18
28
16
Ω
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise Time
–
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
Turn-Off Delay Time
–
Fall Time
–
ns
Turn-On Delay Time
–
Rise Time
–
9
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
Turn-Off Delay Time
–
14
8
Fall Time
–
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 3 A
–
–
–
–
–
–
–
–
–
4.2
50
1.2
34
19
–
A
0.78
17
9.5
10
7
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
–
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2154-Rev. D, 07-Sep-15
Document Number: 68999
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
4
2
0
50
V
GS
= 10 V thru 5 V
V
= 4 V
40
30
20
10
0
GS
T
= 25 °C
C
V
GS
= 3 V
T
C
= 125 °C
T
C
= – 55 °C
0.0
0.5
V
1.0
1.5
2.0
2.5
0
1
2
3
4
5
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
0.025
0.020
0.015
0.010
0.005
1100
880
660
440
220
0
C
iss
V
= 4.5 V
= 10 V
GS
V
GS
C
oss
C
rss
0
10
20
30
40
50
0
5
10
15
20
25
30
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
= 10 A
I =
10 A
D
D
V
GS
= 10 V
6
V
= 20 V
DS
V
= 10 V
DS
V
DS
= 15 V
V
= 4.5 V
GS
4
2
0
– 50
– 25
0
T
25
50
75
100 125 150
0.0
3.2
6.4
9.6
12.8
16.0
Q
g
–
T
o
tal Gate Charge (nC)
– Junction
T
e
mperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68999
S15-2154-Rev. D, 07-Sep-15
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
100
10
1
I
= 10 A
D
T
J
= 150 °C
T
J
= 25 °C
0.1
0.01
T
= 125 °C
= 25 °C
J
T
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
80
64
48
32
16
0
0
– 0.2
– 0.4
– 0.6
– 0.8
I
= 5 mA
D
I
= 250 µA
D
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
–
T
e
mperature (°C)
Time (s)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
T
= 25 °C
A
DC
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
S15-2154-Rev. D, 07-Sep-15
Document Number: 68999
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
16.0
12.8
9.6
6.4
3.2
0.0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperature (°C)
Current Derating
a
6.0
4.8
3.6
2.4
1.2
0.0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
T –
Ambient
T
e
mperature (°C)
A
75
100
125
150
T
C
– Case
T
e
mperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-2154-Rev. D, 07-Sep-15
Document Number: 68999
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S15-2154-Rev. D, 07-Sep-15
Document Number: 68999
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
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including but not limited to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
