Vishay-Intertech-SI4136DY-T1-GE3
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New Product
Si4136DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
I
D
(A)
a
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
0.002 at V
GS
= 10 V
0.0025 at V
GS
= 4.5 V
46
41
20
34 nC
APPLICATIONS
•
OR-ing
•
DC/DC
SO-8
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
T
o
p
V
ie
w
S
Orderin
g
Information:
Si4136D
Y
–
T1-GE3 (Lead (P
b
)-free and Halogen-free)
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
V
DS
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
46
37
Continuous Drain Current (T
J
= 150 °C)
I
D
31
b, c
24.7
b, c
70
T
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
7
Continuous Source-Drain Diode Current
3.1
b, c
30
T
A
= 25 °C
L = 0.1 mH
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
T
A
= 70 °C
I
AS
Single Pulse Avalanche Current
Avalanche Energy
E
AS
mJ
W
45
T
7.8
5
3.5
b, c
2.2
b, c
P
D
Maximum Power Dissipation
T
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
R
thJA
R
thJF
Typical
29
Maximum
Unit
t
≤
10 s
Steady State
35
16
°C/W
13
Notes:
a. Based
on T
C
= 25 °C.
b. Surface
Mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under Steady State conditions is 80 °C/W.
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
1
New Product
Si4136DY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
20
V
V
DS
T
e
mperature Coefficient
19
– 6
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
DS
= V
GS
, I
D
= 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.0
30
2.2
100
1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= 20
V
,
V
GS
= 0 V
V
DS
= 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 10 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
10
V
GS
=
10
V
,
I
D
= 15 A
0.00155 0.002
0.00195 0.0025
85
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Ω
S
V
GS
=
4.5
V
,
I
D
= 10 A
V
DS
= 10
V
,
I
D
= 15 A
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
4560
1285
545
V
DS
= 10
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= 10
V
,
V
GS
= 10
V
,
I
D
= 20 A
73
34
11
9
110
50
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 20 A
f = 1 MHz
0.3
1.5
34
26
50
23
13
11
43
9
3
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
60
45
90
40
25
22
70
18
V
DD
= 10
V
,
R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
V
DD
= 10
V
,
R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 2 A
7
A
Pulse Diode Forward Current
a
Body Diode Voltage
70
1.1
47
36
0.69
31
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
24
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
15.5
15.5
ns
t
b
Notes
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
New Product
Si4136DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
70
10
8
V
GS
= 10 thr
u
3
V
56
42
2
8
14
0
6
T
C
= 25 °C
4
T
C
= 125 °C
2
T
C
= – 55 °C
3
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
4
5
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.0030
0.0026
0.0022
0.001
8
0.0014
0.0010
6000
4
8
00
3600
2400
1200
0
C
iss
V
= 4.5
V
GS
C
oss
V
= 10
V
GS
C
rss
0
14
2
8
42
56
70
0.0
2.4
4.
8
7.2
9.6
12.0
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.
8
1.6
1.4
1.2
1.0
0.
8
0.6
I
= 15 A
D
I
= 20 A
D
8
V
GS
= 10
V
V
DS
= 5
V
6
V
DS
= 10
V
V
DS
= 15
V
V
GS
= 4.5
V
4
2
0
0
15
30
45
60
75
– 50
– 25
0
25
T –
J
u
nction
T
e
mperat
u
re (°C)
J
50
75
100 125 150
Q
g
–
T
o
tal Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
3
New Product
Si4136DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
10
1
0.015
0.012
0.009
0.006
0.003
0.000
I
= 15 A
D
T
J
= 150 °C
T
J
= 25 °C
0.1
0.01
T
= 125 °C
= 25 °C
J
T
J
0.001
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.2
200
160
120
8
0
– 0.1
– 0.4
– 0.7
– 1.0
I
= 5 mA
D
I
= 250
µ
A
D
40
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
–
T
e
mperat
u
re (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
b
y R
*
DS(on)
1 ms
10
1
10 ms
100 ms
1 s
10 s
0.1
DC
T
A
= 25 °C
Single P
u
lse
B
V
DSS Limited
0.01
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
4
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
New Product
Si4136DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
2.0
1.6
1.2
0.
8
0.4
0.0
10
8
6
4
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Am
b
ient
T
e
mperat
u
re (°C)
T
C
– Case
T
e
mperat
u
re (°C)
Power Derating, Junction-to-Ambient
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
5
New Product
Si4136DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
0.02
2. Per Unit Base = R
=
8
0 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-3
-2
-1
10
10
10
1
10
100
1000
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
