Vishay-Intertech-SI4204DY-T1-GE3
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Si4204DY
Vishay Siliconix
Dual N-Channel 20 V MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
19.8
a
17.3
a
Q
g
(Typ.)
Definition
TrenchFET
®
Power MOSFET
100 % R
g
Tested
100 % UIS Tested
0.0046 at V
GS
= 10 V
0.006 at V
GS
= 4.5 V
•
•
•
20
14.5
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D
1
D
2
SO-8
•
•
DC/DC Converter
Fixed Telecom
S
G
S
D
1
1
2
3
4
8
7
6
5
1
1
2
2
•
Notebook PC
D
1
D
2
G
G
2
1
G
D
2
Top
V
ie
w
Orderin
g
Information:
Si4204D
Y
–
T1-GE3 (Lead (P
b
)-free and Halogen-free)
S
S
2
1
N
-Channel MOSFET
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
19.8
15.9
Continuous Drain Current (T
J
= 150 °C)
I
D
T
15.5
b, c
12.2
b, c
50
T
A
= 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
I
DM
I
S
A
T
C
= 25 °C
2.7
1.6
b, c
T
A
= 25 °C
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
SM
I
AS
50
20
L = 0.1 mH
E
AS
20
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
3.25
2.10
Maximum Power Dissipation
P
D
W
2.0
b, c
1.25
b, c
– 55 to 150
Operating Junction and Storage
T
e
mperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
Typ.
45
Max.
62.5
38
Unit
R
thJA
R
thJF
t
≤
10 s
Steady-State
°C/W
Maximum Junction-to-Foot (Drain)
29
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 65154
S10-1042-Rev. A, 03-May-10
1
Si4204DY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
20
V
20
mV/°C
V
GS(th)
T
e
mperature Coefficient
I
D
= 250 µA
– 5.8
Gate Threshold Voltage
Gate-Body Leakage
V
DS
= V
GS
, I
D
= 250 µA
1.0
20
2.4
100
1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= 20
V
,
V
GS
= 0 V
DS
= 20
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
= 5
V
,
V
GS
= 10 V
Zero Gate Voltage Drain Current
On-State Drain Current
b
I
DSS
I
D(on)
R
DS(on)
g
fs
µA
A
V
10
V
GS
= 10
V
,
I
D
= 10 A
0.0038
0.0047
50
0.0046
0.0060
Drain-Source On-State Resistance
b
Ω
S
V
GS
= 4.5
V
,
I
D
= 8 A
Forward
T
r
ansconductance
b
Dynamic
a
V
DS
= 15
V
,
I
D
= 10 A
Input Capacitance
C
iss
C
oss
C
rss
2110
926
235
30
Output Capacitance
Reverse
T
r
ansfer Capacitance
V
DS
= 10
V
,
V
GS
= 0
V
,
I
D
= 1 MHz
V
DS
= 10
V
,
V
GS
= 10
V
,
I
D
= 10 A
pF
45
22
T
o
tal Gate Charge
Q
g
14.5
4.5
3.9
1.4
8
nC
Gate-Source Charge
Q
gs
Q
gd
R
g
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 10 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
0.4
2.8
16
30
45
18
35
45
50
26
Ω
T
u
rn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise Time
15
V
DD
= 10
V
,
R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
24
Fall Time
9
ns
T
u
rn-On Delay Time
18
Rise Time
24
V
DD
= 10
V
,
R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
26
Fall Time
13
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 3 A
2.7
50
A
0.70
20
10
11
9
1.2
40
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
20
N-Channel
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
nS
t
b
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 65154
S10-1042-Rev. A, 03-May-10
Si4204DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
10
8
V
GS
= 10
V
thr
u
3
V
40
30
20
10
0
6
4
T
C
= 25 °C
2
T
C
= 125 °C
1
V
GS
= 2
V
T
C
= – 55 °C
3
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
5
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.0060
0.0054
0.004
8
0.0042
0.0036
0.0030
2500
2000
1500
1000
500
C
iss
V
V
= 4.5
V
GS
= 10
V
C
oss
GS
C
rss
0
0
10
20
30
40
50
0
5
10
15
20
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.
8
1.6
1.4
1.2
1.0
0.
8
0.6
10
I
= 10 A
D
I
= 10 A
D
8
6
4
2
0
V
DS
= 5
V
V
GS
= 10
V
V
= 10
V
DS
V
GS
= 4.5
V
V
= 15
V
DS
– 50
– 25
0
25
50
75
100 125 150
0
7
14
21
2
8
35
Q
g
–
T
o
tal Gate Charge (nC)
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65154
S10-1042-Rev. A, 03-May-10
3
Si4204DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.020
0.016
0.012
0.00
8
0.004
0.000
I
= 10 A
D
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.01
T
= 125 °C
= 25 °C
J
T
J
0.001
0
1
2
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.5
0.2
50
40
30
20
10
0
– 0.1
– 0.4
– 0.7
– 1.0
I
= 5 mA
D
I
= 250
µ
A
D
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
–
T
e
mperat
u
re (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
10 s
0.1
DC
T
A
= 25 °C
Single P
u
lse
B
V
DSS Limited
0.01
0.1
1
10
0.01
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
4
Document Number: 65154
S10-1042-Rev. A, 03-May-10
Si4204DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
15
10
5
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
4.0
3.2
2.4
1.6
0.
8
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65154
S10-1042-Rev. A, 03-May-10
5
Si4204DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
0.02
2. Per Unit Base = R
= 120 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 65154
S10-1042-Rev. A, 03-May-10
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
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including but not limited to the warranty expressed therein.
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
