Vishay-Intertech-SI4401BDY-T1-GE3
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Si4401BDY
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
– 10.5
– 8.7
Q
g
(Typ.)
Definition
0.014 at V
GS
= – 10 V
0.021 at V
GS
= – 4.5 V
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
Tested
– 40
40
Compliant to RoHS Directive 2002/95/EC
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
S
D
D
G
Top View
D
Ordering Information:
Si4401BD
Y
–
T1-E3 (Lead (Pb)-free)
Si4401BD
Y
–
T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
– 40
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
A
= 25 °C
T
A
= 70 °C
– 10.5
– 8.3
– 8.7
– 5.9
Continuous Drain Current (T
J
= 150 °C)
a
I
D
I
DM
I
S
Pulsed Drain Current
– 50
A
Continuous Source Current (Diode Conduction)
a
Avalanche Current
– 2.6
– 1.36
I
AS
E
AS
30
45
L = 1 mH
Single Pulse Avalanche Energy
mJ
W
T
A
= 25 °C
T
A
= 70 °C
2.9
1.5
Maximum Power Dissipation
a
P
D
1.85
0.95
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
36
Maximum
Unit
t
≤
10 s
43
84
21
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
R
thJA
Steady State
Steady State
70
°C/W
R
thJF
16
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
Document Number: 73140
S09-0866-Rev. D, 18-May-09
1
Si4401BDY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= – 250 µA
Gate Threshold Voltage
– 1.0
– 3.0
100
– 1
V
V
DS
= 0
V
,
V
GS
=
20 V
Gate-Body Leakage
nA
V
DS
= – 40
V
,
V
GS
= 0 V
DS
= – 40
V
,
V
GS
= 0
V
,
T
J
= 70 °C
V
DS
=
– 5
V
,
V
GS
= – 10 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
V
– 10
On-State Drain Current
a
– 30
V
GS
= – 10
V
,
I
D
= – 10.5 A
0.011
0.0165
26
0.014
0.021
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
GS
= – 4.5
V
,
I
D
= – 8.7 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= – 15
V
,
I
D
= – 10.5 A
I
S
= – 2.7 A, V
GS
= 0 V
S
V
V
SD
– 0.74
– 1.1
55
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
40
10
14
2.8
16
15
97
47
35
V
DS
= – 15
V
,
V
GS
= – 5
V
,
I
D
= – 10.5 A
nC
1.4
4.2
25
Ω
t
d(on)
t
r
t
d(off)
t
f
25
V
DD
= – 15
V
,
R
L
= 15
Ω
I
D
≅
– 1 A, V
GEN
= – 10
V
,
R
g
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
150
75
ns
t
rr
I
F
= – 2.1 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
55
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
40
30
20
10
0
50
40
30
20
10
0
V
GS
= 10 V thru 4 V
T
= 125 °C
C
3 V
25 °C
– 55 °C
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
Document Number: 73140
S09-0866-Rev. D, 18-May-09
Si4401BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4500
4000
3500
3000
2500
2000
1500
1000
500
0.030
0.025
0.020
C
iss
V
GS
= 4.5 V
0.015
0.010
0.005
0.000
V
GS
= 10 V
C
oss
C
rss
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
I
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current
Capacitance
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 15 V
V
D
= 10 V
DS
GS
= 10.5 A
= 10.5 A
I
D
0
5
10
15
20
25
30
35
40
– 50
– 25
0
25
50
75
100 125 150
Q
– Total Gate Charge (nC)
T –
Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
50
10
0.05
0.04
0.03
0.02
0.01
0.00
T
= 150 °C
J
I
D
= 10.5 A
T
= 25 °C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73140
S09-0866-Rev. D, 18-May-09
3
Si4401BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.8
30
25
20
15
10
5
0.6
0.4
0.2
I
D
= 250 µA
0.0
– 0.2
– 0.4
0
–
–
1
2
– 50
– 25
0
25
50
75
100 125 150
10
10
1
10
100
600
T –
T
e
mperature (°C)
Time (s)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
0.1
T
= 25 °C
C
10 s
DC
Single Pulse
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum
V
at which R
is specified
DS(on)
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3.
T
JM
–
T =
P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
Document Number: 73140
S09-0866-Rev. D, 18-May-09
Si4401BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 73140
S09-0866-Rev. D, 18-May-09
5
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
