Vishay-Intertech-SI4401DDY-T1-GE3
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Si4401DDY
Vishay Siliconix
P-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
– 16.1
– 13.3
Q
g
(Typ.)
Definition
TrenchFET
®
Power MOSFET
100 % R
g
Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
0.015 at V
GS
= – 10 V
0.022 at V
GS
= – 4.5 V
•
•
•
•
– 40
33 nC
APPLICATIONS
•
•
Load Switch
POL
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
T
o
p View
D
P-Channel MOSFET
Ordering Information:
Si4401DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
– 40
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
– 16.1
– 12.9
– 10.2
b, c
– 8.2
b, c
– 50
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
I
DM
I
S
T
C
= 25 °C
– 5.3
– 2.1
b, c
Continous Source-Drain Diode Current
T
A
= 25 °C
L = 0.1 mH
C
= 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
AS
– 28
E
AS
mJ
W
39
T
6.3
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
4
Maximum Power Dissipation
P
D
2.5
b, c
1.6
b, c
– 55 to 150
T
J
, T
stg
°C
Operating Junction and Storage
T
e
mperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
Typical
37
Maximum
Unit
R
thJA
R
thJF
t
10 s
Steady State
50
20
°C/W
Maximum Junction-to-Foot (Drain)
16
Notes:
a. Based
on T
C
= 25 °C.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under steady state conditions is 85 °C/W.
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
1
Si4401DDY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 40
V
V
DS
T
e
mperature Coefficient
– 36
5
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
DS
= V
GS
, I
D
= – 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
– 1.2
– 25
– 2.5
100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 40
V
,
V
GS
= 0 V
DS
= – 40
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
– 5
V
,
V
GS
= – 10 V
V
GS
– 10
V
,
I
D
= – 10.2 A
V
GS
– 4.5
V
,
I
D
= – 8.4 A
V
DS
= – 15
V
,
I
D
= – 10.2 A
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 5
0.012
0.018
37
0.015
0.022
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
3007
335
291
64
V
DS
= – 20
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 20
V
,
V
GS
= – 10
V
,
I
D
= – 10.2 A
95
50
Q
g
T
o
tal Gate Charge
33
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
9.8
15.7
2
V
DS
= – 20
V
,
V
GS
= – 4.5
V
,
I
D
= – 10.2 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
0.4
4
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
57
86
75
60
26
20
20
68
18
Rise Time
50
V
DD
= – 20
V
,
R
L
= 2.4
I
D
– 8.2 A, V
GEN
= – 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
40
Fall Time
17
ns
T
u
rn-On Delay Time
13
Rise Time
11
V
DD
= – 20
V
,
R
L
= 2.4
I
D
– 8.2 A, V
GEN
= – 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
45
Fall Time
9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 5.3
– 50
– 1.2
54
A
I
S
= – 8.2 A, V
GS
0 V
– 0.8
36
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
41
62
I
F
= – 8.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
20
ns
t
b
16
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Si4401DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
10
8
V
= 10 V thru 5 V
GS
V
= 4 V
GS
40
30
20
10
0
6
4
T
= 25 °C
C
2
T
= 125 °C
2
C
V
= 3 V
GS
T
= – 55 °C
C
0
0.0
0.5
1.0
1.5
2.0
50
70
0
1
3
4
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
0.024
0.018
0.012
0.006
0
4500
3600
2700
1800
900
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0
0
10
20
30
40
0
8
16
24
32
40
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
I
= 10.2 A
D
V
= 10.2 V; I
= 10.2 A
D
GS
V
= 10 V
DS
6
V
= 20 V
DS
V
= 32 V
DS
V
= 4.5 V; I
= 8.4 A
D
4
GS
2
0
– 50
– 25
0
25
50
75
100 125 150
0
14
28
42
56
T
J
– Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Q
g
– Total Gate Charge (nC)
Gate Charge
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
3
Si4401DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.05
0.04
0.03
0.02
0.01
0
I
= 10.2 A
D
T
= 150 °C
J
10
T
= 125 °C
J
T
= 25 °C
J
1
T
= 25 °C
J
0.1
2
4
6
8
10
0
0.5
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
1.5
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.5
2.2
1.9
1.6
1.3
80
60
40
20
I
= 250 μA
D
0
-2
-1
– 50
– 25
0
25
50
75
100 125 150
10
10
1
10
100
1000
Time (s)
T
J
– Temperature (°C)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
100
Limited by R
*
DS(on)
100 μs
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
T
= 25 °C
A
DC
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Si4401DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
18.0
13.5
9.0
4.5
0
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
Current Derating*
1.80
1.35
0.90
0.45
0.00
8
6
4
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
A
– Ambient Temperature (°C)
Power, Junction-to-Ambient
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
5
Si4401DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 85 °
C
/
W
thJA
(t)
3. T
– T
= P
Z
A DM
thJA
JM
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
10
0.01
-4
-3
-2
-1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology an
d Package Reli
ability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 66801
S10-1471-Rev. A, 05-Jul-10
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
