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Si4455DY
Vishay Siliconix
P-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
T
r
enchFET
®
Power MOSFET
100% R
g
and UIS Tested
Material categorization:
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
Q
g
(Typ.)
– 8.9
c
– 8.6
c
0.295 at V
GS
= – 10 V
0.315 at V
GS
= – 6 V
– 150
23.2 nC
For definitions of compliance please see
A
v
aila
b
le
SO-8
APPLICATIONS
S
S
1
2
3
4
8
7
6
5
D
•
Active Clamp in Intermediate DC/
DC Power Supplies
S
D
•
H-Bridge High Side Switch for
Lighting Application
S
D
D
G
G
Top
V
ie
w
D
Orderin
g
Information:
Si4455D
Y
–
T1-E3 (Lead (P
b
)-free)
Si4455D
Y
–
T1-GE3 (Lead (P
b
)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 150
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
T
T
T
C
= 25 °C
C
= 70 °C
A
= 25 °C
– 2.8
– 2.3
Continuous Drain Current (T
J
= 150 °C)
I
D
– 2
a, b
– 1.6
a, b
– 15
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
A
= 25 °C
– 4.9
– 2.5
a, b
Continuous Source-Drain Diode Current
T
I
AS
– 15
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
E
AS
11.25
5.9
mJ
W
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
3.8
P
D
Maximum Power Dissipation
3.1
a, b
2
a, b
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
Notes:
a. Surface mounted on 1″ x 1″ FR4 board.
b. t = 10 s.
c. Based
on T
C
= 25 °C.
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Foot (Drain)
Symbol
R
thJA
R
thJF
Typical
33
Maximum
Unit
t
10 s
Steady State
40
21
°C/W
17
Notes:
a. Surface
mounted on 1″ x 1″ FR4 board.
b. Maximum
under steady state conditions is 80 °C/W.
Document Number: 68631
S13-1371-Rev. C, 24-Jun-13
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
1
Si4455DY
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 150
V
V
DS
T
e
mperature Coefficient
– 165
– 6.6
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= – 250 µA
– 2
– 8
– 4
100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 150
V
,
V
GS
= 0 V
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= – 150
V
,
V
GS
= 0
V
,
T
J
= 55 °C
– 10
V
DS
– 5
V
,
V
GS
= – 10 V
V
GS
= – 10
V
,
I
D
= – 4 A
V
GS
= – 6
V
,
I
D
= – 3 A
V
DS
= – 15
V
,
I
D
= 4 A
0.245
0.260
12
0.295
0.315
Drain-Source On-State Resistance
a
S
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
1190
61
V
DS
= – 50
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
42
V
DS
= – 75
V
,
V
GS
= – 10
V
,
I
D
= – 3 A
27.5
23.2
5.4
8.4
6.1
20
42
35
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
V
DS
= – 75
V
,
V
GS
= – 6
V
,
I
D
= – 3 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
f = 1 MHz
9.2
30
145
60
51
18
42
78
53
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= – 75
V
,
R
L
= 25
I
D
– 3 A, V
GEN
= – 6
V
,
R
g
= 1
95
T
u
rn-Off DelayTime
Fall Time
38
34
ns
T
u
rn-On Delay Time
Rise Time
11
V
DD
= – 75
V
,
R
L
= 25
28
I
D
– 3 A, V
GEN
= – 10
V
,
R
g
= 1
T
u
rn-Off DelayTime
Fall Time
52
35
Drain-Source Body Diode Characteristics
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 3 A
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
– 13
– 15
– 1.2
90
A
– 0.8
65
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
180
45
270
I
F
= – 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
20
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 68631
S13-1371-Rev. C, 24-Jun-13
Si4455DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
16
12
8
2.0
1.6
1.2
0.
8
0.4
0.0
V
= 10
V
thr
u
6
V
GS
V
= 5
V
GS
T
C
= 125 °C
4
V
= 4
V
T
C
= 25
GS
T
C
= – 55 °C
5
0
0
2
4
6
8
10
0
1
2
3
4
6
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
V
– Gate-to-So
u
rce
V
oltage (
V
)
GS
Output Characteristics
Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
1700
1360
1020
6
8
0
340
0
C
iss
V
= 6
V
GS
V
= 10
V
GS
C
oss
C
rss
0
4
8
12
16
20
0
20
40
60
8
0
100
I
– DrainC
u
rrent (A)
V
– Drain-to-So
u
rce
V
oltage (
V
)
D
DS
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.2
1.9
1.6
1.3
1.0
0.7
0.4
10
V
= 50
V
I
= 4 A
DS
D
I
= 3 A
D
8
6
4
2
0
V
= 10
V
GS
V
= 75
V
DS
V
= 100
V
DS
V
= 6
V
GS
– 50
– 25
0
T
25
50
75 100
125 150
0
6
12
1
8
24
30
Q
– TotalGateCharge(nC)
– J
u
nction
T
e
mperat
u
re (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68631
S13-1371-Rev. C, 24-Jun-13
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
3
Si4455DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
2.0
1.6
1.2
0.
8
0.4
0.0
10
T
J
= 150 °C
T
J
= 25 °C
1
T
= 125 °C
J
T
= 25 °C
J
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
0.7
0.4
0.1
200
160
120
8
0
I
= 250
µ
A
D
I
= 5 mA
D
– 0.2
– 0.5
40
0
– 50
– 25
0
25
50
75
100 125
150
0.001
0.01
0.1
1
10
T
– Temperat
u
re (°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
10
1
Limited
b
y R
*
DS(on)
1 ms
10 ms
100 ms
0.1
1 s
10 s
T
= 25 °C
A
Single P
u
lse
DC
0.01
0.01
0.1
1
10
100
1000
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
4
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 68631
S13-1371-Rev. C, 24-Jun-13
Si4455DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4
3
2
1
0
0
25
50
75
100
125
150
T
– Case
T
e
mperat
u
re (°C)
C
Current Derating*
8
.0
6.4
4.
8
3.2
1.6
0.0
2.0
1.6
1.2
0.
8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Am
b
ient
T
e
mperat
u
re (°C)
T
– Case
T
e
mperat
u
re (°C)
A
C
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68631
S13-1371-Rev. C, 24-Jun-13
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
5
Si4455DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
=
8
0
°
C
/
W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
For technical questions, contact:
pmostechsupport@visha
y
.
com
This document is subject to change without notice.
Document Number: 68631
S13-1371-Rev. C, 24-Jun-13
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
