Vishay-Intertech-SI4465ADY-T1-GE3
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Si4465ADY
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D
(A)
b
– 13.7
– 12.4
– 10
Q
g
(Typ.)
V
DS
(V)
R
DS(on)
(
Ω
)
Available
TrenchFET
®
Power MOSFET
1.8 V Rated
0.009 at V
GS
= – 4.5 V
0.011 at V
GS
= – 2.5 V
0.016 at V
GS
= – 1.8 V
•
•
55 nC
– 8
•
100 % R
g
Tested
S
SO-
8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top
V
ie
w
D
Orderin
g
Information:
Si4465AD
Y
–
T1-E3 (Lead (P
b
)-free)
Si4465AD
Y
–
T1-GE3 (Lead (P
b
)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
Limit
– 8
Unit
V
V
GS
8
T
A
= 25 °C
– 13.7
– 11
T
A
= 70 °C
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
a, b
I
D
T
– 20
T
C
= 70 °C
– 16
A
I
DM
I
S
– 40
Pulsed Drain Current
– 2.5
40
Continuous Source Current (Diode Conduction)
a, b
I
SM
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
3.0
1.95
6.5
Maximum Power Dissipation
a, b
P
D
W
4.2
Operating Junction and Storage
T
e
mperature Range
T
J
, T
stg
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
≤
10 s
Steady State
Steady State
34
67
15
41
80
19
Maximum Junction-to-Ambient (MOSFET)
a
Maximum Junction-to-Foot (Drain)
R
thJA
°C/W
R
thJF
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
b. t
≤
10 s.
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
1
Si4465ADY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= – 250 µA
Gate Threshold Voltage
Gate-Body Leakage
– 0.45
– 1.0
100
– 1
V
V
DS
= 0
V
,
V
GS
=
8 V
nA
V
DS
= – 8
V
,
V
GS
= 0 V
V
DS
= – 8
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥ −
5
V
,
V
GS
= – 4.5 V
V
GS
= – 4.5
V
,
I
D
= – 14 A
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
– 5
I
D(on)
– 20
0.0075
0.0092
0.013
58
0.009
0.011
0.016
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= – 2.5
V
,
I
D
= – 12 A
Ω
V
GS
= 1.8
V
,
I
D
= 10 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= – 10
V
,
I
D
= – 14 A
I
S
= – 2.1 A, V
GS
= 0 V
S
V
V
SD
– 0.57
– 1.2
85
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
55
6
V
DS
= – 4
V
,
V
GS
= – 4.5
V
,
I
D
= – 14 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
nC
10
2.5
33
3.8
50
Ω
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
V
DD
= – 4
V
,
R
L
= 4
Ω
I
D
≅
– 10 A, V
GEN
= – 4.5
V
,
R
g
= 6
Ω
170
168
112
85
255
255
170
130
125
T
u
rn-Off Delay Time
Fall Time
ns
t
rr
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
= – 2.1 A, dI/dt = 100 A/µs
Q
rr
81
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
2.0
1.6
1.2
0.
8
0.4
0.0
V
GS
= 5 thr
u
2
V
1.5
V
32
24
16
8
T
= 125 °C
C
25 °C
1
V
– 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.3
0.6
– Gate-to-So
u
rce
V
oltage (
V
)
GS
0.9
1.2
1.5
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
Output Characteristics
Transfer Characteristics
0.020
8
500
6
8
00
5100
3400
1700
0
0.017
0.014
0.011
0.00
8
0.005
C
iss
V
GS
= 1.
8 V
V
= 2.5
V
= 4.5
V
GS
C
oss
C
rss
V
GS
0
8
16
24
32
40
0.0
1.6
3.2
4.
8
6.4
8
.0
I
D
– Drain
C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
On-Resistance vs. Drain Current
Capacitance
1.5
1.3
1.1
0.9
0.7
8
.0
6.4
4.
8
3.2
1.6
0.0
I
D
= 14
A
V
D
= 1.
8 V
GS
= 14
A
I
V
= 4
V
DS
V
DS
= 6
V
V
D
= 4.5
V
GS
= 14
A
I
– 50
– 25
0
25
50
75
100 125 150
0
21
42
63
8
4
105
T –
J
u
nction
T
e
mperat
u
re (°C)
J
Q
–
T
o
tal
Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
3
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.05
0.04
0.03
0.02
0.01
0.00
100
T
= 150 °C
j
10
T
= 25 °C
j
1
0
125 °C
25 °C
0.6
– So
u
rce-to-Drain
V
oltage (
V
)
0
1
2
3
4
5
0
0.3
0.9
1.2
1.5
V
SD
– Gate-to-So
u
rce
V
oltage (
V
)
V
GS
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.3
100
8
0
60
40
20
0
0.2
I
D
= 5 mA
0.1
I
D
= 250
µ
A
0.0
– 0.1
– 0.2
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
–
T
e
mperat
u
re (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
Limited
DM
*
Limited
b
y R
DS(on)
10
10 ms
100 ms
1 s
1
10 s
DC
0.1
T
= 25 °C
A
B
V
DSS Limited
Single P
u
lse
0.01
0.1
10
1
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operatin Area
4
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
15
10
5
0
0
25
50
75
100
125
150
T
– Case
T
e
mperat
u
re (°C)
C
Current Derating
8
.0
6.4
4.
8
3.2
1.6
0.0
2.0
1.6
1.2
0.
8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Case
T
e
mperat
u
re (°C)
T
– Am
b
ient
T
e
mperat
u
re (°C)
C
A
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
5
Si4465ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
0.1
N
otes:
0.1
P
DM
0.05
t
1
t
t
0.02
1
1. D
u
ty Cycle, D =
2
2. Per Unit Base = R
=
8
0 °C
thJA
(t)
3. T
– T
= P
Z
JM DM
thJA
A
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 73856
S09-0393-Rev. B, 09-Mar-09
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16
Document Number: 91000
1
