Vishay-Intertech-SI4485DY-T1-GE3
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Si4485DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
I
D
(A)
a, e
– 6
Definition
TrenchFET
®
Power MOSFET
100 % R
g
Tested
0.042 at V
GS
= – 10 V
0.072 at V
GS
= – 4.5 V
•
•
•
– 30
7 nC
– 6
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
Load Switch
Notebook Adaptor Switch
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
T
o
p View
D
P-Channel MOSFET
Ordering Information:
Si4485DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
– 30
V
V
GS
20
– 6
e
– 6
e
– 5.9
b, c
– 4.7
b, c
– 25
T
C
= 25 °C
C
= 70 °C
T
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
A
Pulsed Drain Current
I
DM
I
S
T
C
= 25 °C
– 4.2
– 2
b, c
Continous Source-Drain Diode Current
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
5
3.2
Maximum Power Dissipation
P
D
W
2.4
b, c
1.5
b, c
– 55 to 150
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
°C
Operating Junction and Storage
T
e
mperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
Typical
42
Maximum
Unit
R
thJA
R
thJF
t
≤
10 s
Steady State
53
25
°C/W
Maximum Junction-to-Foot (Drain)
19
Notes:
a. Based
on T
C
= 25 °C.
b. Surface
Mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under Steady State conditions is 85 °C/W.
e. Package
Limited.
Document Number: 64989
S09-0999-Rev. A, 01-Jun-09
1
Si4485DY
Vishay Siliconix
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 30
V
V
DS
T
e
mperature Coefficient
– 19
4.4
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
DS
= V
GS
, I
D
= – 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
– 1.2
– 25
– 2.5
100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 30
V
,
V
GS
= 0 V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≤
– 5
V
,
V
GS
= – 10 V
V
GS
=
– 10
V
,
I
D
= – 5.9 A
V
GS
=
– 4.5
V
,
I
D
= – 4.5 A
V
DS
= – 15
V
,
I
D
= – 5.9 A
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 5
0.035
0.060
10
0.042
0.072
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Ω
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
590
115
93
13.6
7
V
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 5.9 A
21
11
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
2.3
3.2
5
V
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 5.9 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
1
10
45
38
24
16
16
20
27
16
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
30
25
16
8
Rise Time
V
DD
= – 15
V
,
R
L
= 3.2
Ω
I
D
≅
– 4.7 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
8
Rise Time
10
18
8
V
DD
= – 15
V
,
R
L
= 3.2
Ω
I
D
≅
– 4.7 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
– 4.2
– 25
– 1.2
26
A
I
S
= – 4.7 A, V
GS
=
0 V
– 0.8
17
9
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
18
I
F
= – 4.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
10
7
ns
t
b
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 64989
S09-0999-Rev. A, 01-Jun-09
Si4485DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
3.0
2.4
1.
8
1.2
0.6
0.0
V
GS
= 5
V
V
= 10
V
thr
u
6
V
GS
20
15
10
5
V
= 4
V
GS
T
C
= 25 °C
V
GS
= 3
V
T
C
= 125 °C
2
T
C
= – 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
15
0
1
3
4
V
– Gate-to-So
u
rce
V
oltage (
V
)
GS
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
Output Characteristics
Transfer Characteristics
0.10
0.0
8
0.06
0.04
0.02
0.00
1000
8
00
600
400
200
0
V
GS
= 4.5
V
C
iss
V
= 10
V
GS
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
V
– Drain-to-So
u
rce
V
oltage (
V
)
I
– Drain C
u
rrent (A)
DS
D
On-Resistance vs. Drain Current
Capacitance
10
8
1.7
1.5
1.3
1.1
0.9
0.7
I
= 5.9 A
I =
5.9 A
D
D
V
DS
= 15
V
V
= 10
V
GS
V
DS
=
8 V
6
V
GS
= 4.5
V
V
DS
= 24
V
4
2
0
0
3
6
9
12
– 50
– 25
0
25
– J
u
nction
T
e
mperat
u
re (°C)
J
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
T
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64989
S09-0999-Rev. A, 01-Jun-09
3
Si4485DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.10
100
I
= 5.9 A
D
0.0
8
0.06
0.04
0.02
T
= 150 °C
J
10
T
J
= 25 °C
T
= 125 °C
J
1
T
= 25 °C
J
0.1
0.0
2
4
6
8
10
0.3
0.6
0.9
1.2
1.5
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
2.2
2.0
1.
8
1.6
1.4
1.2
I
= 250
µ
A
D
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (s)
T
J
–
T
e
mperat
u
re (°C)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
100
µ
s
1 ms
1
10 ms
100 ms
1 s
0.1
10 s
DC
T
A
= 25 °C
B
V
DSS Limited
Single P
u
lse
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
4
Document Number: 64989
S09-0999-Rev. A, 01-Jun-09
Si4485DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
8
Package Limited
6
4
2
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
6
5
4
3
2
1
0
2.0
1.5
1.0
0.5
0.0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
T
A
– Am
b
ient
T
e
mperat
u
re (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64989
S09-0999-Rev. A, 01-Jun-09
5
Si4485DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
t
0.05
0.02
1
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 70 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
6
Document Number: 64989
S09-0999-Rev. A, 01-Jun-09
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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typical requirements that are often placed on Vishay products in generic applications.
Such statements are not binding
statements about the suitability of products for a particular application.
It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts.
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including but not limited to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
