Vishay-Intertech-SI4532CDY-T1-GE3
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Si4532CDY
Vishay Siliconix
N- and P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
a
Q
g
(Typ.)
Definition
0.047 at V
GS
= 10 V
0.065 at V
GS
= 4.5 V
0.089 at V
GS
= – 10 V
0.140 at V
GS
= – 4.5 V
6.0
•
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
N-Channel
P-Channel
30
2.75
5.2
– 4.3
4.1
– 30
– 3.4
APPLICATIONS
D
1
S
2
•
DC/DC Conve
SO-8
•
Load Switch
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
2
G
S
G
1
G
Top View
S
1
D
2
Ordering Information:
Si4532CD
Y
–
T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
N-Channel
P-Channel
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
30
– 30
V
V
GS
20
T
C
= 25 °C
T
C
= 70 °C
6.0
4.9
– 4.3
– 3.4
Continuous Drain Current (T
J
= 150 °C)
I
D
4.9
b, c
– 3.4
b, c
T
A
= 25 °C
3.9
b, c
– 2.7
b, c
T
A
= 70 °C
I
DM
I
S
A
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
24
– 15
T
C
= 25 °C
T
A
= 25 °C
2.3
– 2.3
1.5
b, c
24
– 1.5
b, c
– 12
8
I
SM
I
AS
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
7
L = 0.1 mH
E
AS
2.5
3.2
mJ
W
T
C
= 25 °C
T
C
= 70 °C
2.78
1.78
2.78
1.78
P
D
Maximum Power Dissipation
1.78
b, c
1.14
b, c
1.78
b, c
1.14
b, c
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
THERMAL RESISTANCE RATINGS
Parameter
– 55 to 150
°C
N-Channel
P-Channel
Symbol
R
thJA
Unit
Typ.
Max.
Typ.
Max.
70
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
10 s
57
37
70
45
57
37
°C/W
R
thJF
Steady State
45
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
1
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Static
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
V
GS
= 0
V
,
I
D
= 250 µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
30
V
DS
Drain-Source Breakdown Voltage
V
V
GS
= 0
V
,
I
D
= – 250 µA
– 30
I
D
= 250 µA
33
– 33
– 5.8
4.5
V
DS
T
e
mperature Coefficient
V
DS
/T
J
V
GS(th)
/T
J
I
D
= – 250 µA
mV/°C
I
D
= 250 µA
V
GS(th)
T
e
mperature Coefficient
II
D
= – 250 µA
V
DS
= V
GS
, I
D
= 250 µA
1.0
3.0
V
GS(th)
Gate-Source Threshold Voltage
Gate-Body Leakage
V
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
20 V
V
DS
= 30
V
,
V
GS
= 0 V
P-Ch
N-Ch
P-Ch
N-Ch
– 1.0
– 3.0
100
– 100
1
I
GSS
=
nA
V
DS
= – 30
V
,
V
GS
= 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
– 1
5
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
b
µA
A
V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
– 5
V
DS
=
5
V
,
V
GS
= 10 V
20
V
DS
= –
5
V
,
V
GS
= – 10 V
– 12
V
GS
= 10
V
,
I
D
= 3.5 A
0.038
0.073
0.052
0.113
7
0.047
0.089
0.065
0.140
V
GS
= – 10
V
,
I
D
= – 3.5 A
GS
= 4.5
V
,
I
D
= 2.8 A
Drain-Source On-State Resistance
b
S
V
V
GS
= – 4.5
V
,
I
D
= – 2.5 A
V
DS
= 15
V
,
I
D
= 2.5 A
Forward
T
r
ansconductance
b
V
DS
= – 15
V
,
I
D
= – 3.5 A
7
Dynamic
a
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
305
340
65
67
29
51
6
C
iss
C
oss
C
rss
Input Capacitance
N-Channel
DS
= 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
Output Capacitance
pF
P-Channel
DS
= – 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
Reverse
T
r
ansfer Capacitance
V
DS
= 15
V
,
V
GS
= 10
V
,
I
D
= 2.5 A
DS
= – 15
V
,
V
GS
= – 10
V
,
I
D
= – 2.5 A
9
V
V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7.8
2.75
4.1
1.3
1.3
0.9
1.8
3.1
10
12
4.5
6.2
Q
g
T
o
tal Gate Charge
N-Channel
DS
= 15
V
,
V
GS
= 4.5 V I
D
= 2.5 A
nC
V
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
P-Channel
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 2.5 A
f = 1 MHz
0.6
2.0
6.2
20
2
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Dynamic
a
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7
5.5
12
13
14
17
6
11
10
18
25
25
30
10
15
30
60
30
60
18
40
18
30
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
N-Channel
DD
= 15
V
,
R
L
= 15
V
I
D
1 A, V
GEN
= 10
V
,
R
g
= 1
P-Channel
DD
= – 15
V
,
R
L
= 15
T
u
rn-Off Delay Time
Fall Time
V
I
D
– 1 A, V
GEN
= – 10
V
,
R
g
= 1
7.7
16
40
16
40
9
ns
T
u
rn-On Delay Time
Rise Time
N-Channel
DD
= 15
V
,
R
L
= 15
V
I
D
1 A, V
GEN
= 4.5
V
,
R
g
= 1
P-Channel
DD
= – 15
V
,
R
L
= 15
T
u
rn-Off Delay Time
Fall Time
20
9
V
I
D
– 1 A, V
GEN
= – 4.5
V
,
R
g
= 1
17
Drain-Source Body Diode Characteristics
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
2.3
– 2.3
24
Continuous Source-Drain Diode
Current
I
S
T
C
= 25 °C
A
V
Pulse Diode Forward Current
a
Body Diode Voltage
I
SM
– 12
1.2
I
S
= 1.25 A
0.8
V
SD
I
S
= – 0.75 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
– 0.8
14
17
6
– 1.2
21
t
rr
Q
rr
t
a
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
30
N-Channel
I
F
= 1.25 A, dI/dt = 100 A/µs, T
J
= 25 °C
10
nC
11
9
20
P-Channel
I
F
= – 2.5 A, dI/dt = – 100 A/µs, T
J
= 25 °C
12
5
ns
t
b
Reverse Recovery Rise Time
5
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
3
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.2
1.0
0.
8
0.6
0.4
0.2
0.0
24
1
8
12
6
V
= 10
V
thr
u
6
V
GS
V
GS
= 5
V
T
= 25 °C
C
T
C
= 125 °C
V
= 4
V
GS
T
C
= – 55 °C
4
0
0
1
2
3
5
0
2
4
6
8
10
V
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
GS
Output Characteristics
Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
400
350
300
250
200
150
100
50
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.7
1.5
1.3
1.1
0.9
0.7
10
I
= 2.5 A
D
I
= 6 A
D
V
= 7.5
V
DS
8
V
GS
= 10
V
V
= 15
V
DS
6
V
= 22.5
V
DS
V
= 4.5
V
GS
4
2
0
– 50
– 25
0
T
25
50
75
100 125 150
0
2
4
6
Q
g
–
T
o
tal Gate Charge (nC)
– J
u
nction
T
e
mperat
u
re (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
4
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.25
0.20
0.15
0.10
0.05
0.00
T
= 150 °C
J
T
= 25 °C
J
1
T
J
= 125 °C
T
J
= 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
50
40
30
20
10
0
I
= 250 µA
D
0.0
– 0.2
– 0.4
– 0.6
– 0.8
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
– Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited
b
y R
*
DS(on)
10
µ
s
100
µ
s
10
1
1 ms
10 ms
T
= 25 °C
100 ms
A
Single P
u
lse
0.1
1 s
10 s
100 s, DC
B
V
DSS Limited
0.01
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
5
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
Package Limited
4
2
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
1.5
1.2
0.9
0.6
0.3
0.0
3.5
2.
8
2.1
1.4
0.7
0.0
0
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
6
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 120 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
7
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
12
9
2.0
1.5
1.0
0.5
0.0
V
= 5
V
GS
V
GS
= 10
V
thr
u
6
V
V
= 4
V
GS
6
T
C
= 25 °C
3
T
C
= 125 °C
V
GS
= 3
V
T
C
= – 55 °C
0
0.0
0.5
1.0
1.5
2.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
600
450
300
150
0
C
iss
V
= 4.5
V
GS
V
GS
= 10
V
C
oss
C
rss
0
3
6
9
12
15
0
6
12
1
8
24
30
I
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.
8
1.6
1.4
1.2
1.0
0.
8
0.6
I
= 3.2 A
D
I
= 2.5 A
D
V
GS
= 10
V
V
= 15
V
DS
8
6
4
2
0
V
DS
= 7.5
V
V
GS
= 4.5
V
V
DS
= 22.5
V
– 50
– 25
0
25
50
75
100 125 150
0
2
4
6
8
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
–
T
o
tal Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
8
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.4
0.3
0.2
0.1
0.0
T
= 25 °C
J
I
= 3.5 A
D
1
T
J
= 150 °C
0.1
T
= 125 °C
J
T
= – 50 °C
J
0.01
T
= 25 °C
6
J
0.001
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
8
10
V
– So
u
rce-to-Drain
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
50
40
30
20
10
0
I
= 250
µ
A
D
I
= 1 mA
D
0.2
0.0
-0.2
-0.4
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
–
T
e
mperat
u
re (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
b
y R
*
DS(on)
10
µ
s
100
µ
s
10
1 ms
1
10 ms
T
= 25 °C
A
100 ms
Single P
u
lse
0.1
1 s
10 s
100 s, DC
B
V
DSS Limited
0.01
0.1
1
10
100
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
9
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
5
4
3
2
1
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
1.5
1.2
0.9
0.6
0.3
0.0
3.5
2.
8
2.1
1.4
0.7
0.0
0
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
10
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
Si4532CDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 110 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
11
This document is subject to change without notice.
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
