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Si4554DY
Vishay Siliconix
N- and P-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
Definition
I
D
(A)
a
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
Compliant to RoHS Directive 2002/95/EC
8
e
8
e
0.024 at V
GS
= 10 V
0.026 at V
GS
= 8 V
0.027 at V
GS
= 4.5 V
0.027 at V
GS
= – 10 V
0.028 at V
GS
= – 8 V
0.034 at V
GS
= – 4.5 V
N-Channel
P-Channel
40
6.5
8
– 8
e
– 8
e
APPLICATIONS
– 40
21.7
•
Motor Drive
– 7.5
SO-8
D
1
S
2
S
1
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
G
1
S
2
G
2
G
2
G
1
Top View
Ordering Information:
Si4554D
Y
–
T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
D
2
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
N-Channel
P-Channel
– 40
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
40
V
V
GS
20
20
8
e
– 8
e
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
6.8
– 6.8
– 6.6
b, c
Continuous Drain Current (T
J
= 150 °C)
I
D
6.8
b, c
T
5.4
b, c
– 5.3
b, c
T
A
= 70 °C
I
DM
I
S
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
40
– 40
A
T
C
= 25 °C
T
A
= 25 °C
2.6
– 2.6
1.6
b, c
40
– 1.6
b, c
– 40
I
SM
I
AS
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
10
5
– 20
20
L = 0.1 mH
E
AS
mJ
W
T
C
= 25 °C
T
C
= 70 °C
3.1
2
3.2
2.1
P
D
Maximum Power Dissipation
2
b, c
2
b, c
T
A
= 25 °C
1.28
b, c
1.28
b, c
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Typ. Max.
P-Channel
Parameter
Symbol
R
thJA
Unit
Typ.
Max.
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
≤
10 s
50
30
62.5
40
47
29
62.5
38
°C/W
R
thJF
Steady State
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
1
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Static
V
GS
= 0
V
,
I
D
= 250 µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
40
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
Drain-Source Breakdown Voltage
V
V
GS
= 0
V
,
I
D
= – 250 µA
– 40
I
D
= 250 µA
40
– 34
– 4.1
5
V
DS
T
e
mperature Coefficient
I
D
= – 250 µA
I
D
= 250 µA
D
= – 250 µA
mV/°C
V
GS(th)
T
e
mperature Coefficient
I
V
DS
= V
GS
, I
D
= 250 µA
DS
= V
GS
, I
D
= – 250 µA
1
2.2
– 2.5
100
100
1
Gate Threshold Voltage
Gate-Body Leakage
V
V
– 1.2
V
DS
= 0
V
,
V
GS
DS
= 0
V
,
V
GS
=
=
20 V
20 V
I
GSS
nA
V
V
DS
= 40
V
,
V
GS
= 0 V
V
DS
= – 40
V
,
V
GS
= 0 V
– 1
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
b
µA
A
V
DS
= 40
V
,
V
GS
= 0
V
,
T
J
= 55 °C
10
V
DS
= – 40
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
= 5
V
,
V
GS
= 10 V
– 10
20
I
D(on)
V
DS
= – 5
V
,
V
GS
= – 10 V
– 20
V
GS
= 10
V
,
I
D
= 6.8 A
0.020 0.024
0.021 0.027
0.021 0.026
0.022 0.028
0.022 0.027
0.027 0.034
27
V
GS
= – 10
V
,
I
D
= – 8 A
V
GS
= 8
V
,
I
D
= 6.7 A
Drain-Source On-State Resistance
b
R
DS(on)
Ω
V
GS
= – 8
V
,
I
D
= – 6.5 A
V
GS
= 4.5
V
,
I
D
= 6.6 A
V
GS
= – 4.5
V
,
I
D
= – 5 A
V
DS
= 15
V
,
I
D
= 6.8 A
Forward
T
r
ansconductance
b
g
fs
S
V
DS
= – 15
V
,
I
D
= – 6.7 A
25
Dynamic
a
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
690
2000
115
240
41
C
iss
C
oss
C
rss
Input Capacitance
N-Channel
DS
= 20
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
Output Capacitance
pF
P-Channel
DS
= – 20
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
Reverse
T
r
ansfer Capacitance
202
V
DS
= 20
V
,
V
GS
= 10
V
,
I
D
= 10 A
DS
= – 20
V
,
V
GS
= – 10
V
,
I
D
= – 10 A
13.3
20
V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
41.5
6.5
21.7
2.3
5.6
1.7
9.8
1.3
6.4
63
10
33
Q
g
T
o
tal Gate Charge
N-Channel
DS
= 20
V
,
V
GS
= 4.5
V
,
I
D
= 10 A
nC
V
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
P-Channel
V
DS
= – 20
V
,
V
GS
= – 4.5
V
,
I
D
= – 10 A
f = 1 MHz
0.3
1.3
2.6
Ω
12.8
2
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Typ.
a
Parameter
Dynamic
a
Symbol
Test Conditions
Min.
Max.
Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
10
20
20
18
25
90
14
26
22
75
22
70
26
70
14
35
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
N-Channel
DD
= 20
V
,
R
L
= 3.7
Ω
I
D
≅
5.4 A, V
GEN
= 10
V
,
R
g
= 1
Ω
10
10
9
V
16
50
7
P-Channel
DD
= – 20
V
,
R
L
= 2
Ω
I
D
≅
– 10 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
V
13
11
42
12
40
17
40
7
ns
T
u
rn-On Delay Time
Rise Time
N-Channel
DD
= 20
V
,
R
L
= 3.7
Ω
I
D
≅
5.4 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
V
P-Channel
DD
= – 20
V
,
R
L
= 2
Ω
I
D
≅
– 10 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
V
Fall Time
18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
2.6
– 2.6
40
I
S
T
C
= 25 °C
A
V
Pulse Diode Forward Current
a
Body Diode Voltage
I
SM
– 40
1.2
I
S
= 5.4 A
0.81
V
SD
I
S
= – 2 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
– 0.77
17
41
10
32
10
15
7
– 1.2
34
t
rr
Q
rr
t
a
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
80
N-Channel
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
20
nC
65
P-Channel
I
F
= – 5 A, dI/dt = – 100 A/µs, T
J
= 25 °C
ns
t
b
Reverse Recovery Rise Time
26
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
3
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
30
20
10
0
10
V
GS
= 10 V thru 4 V
8
V
GS
= 3 V
6
T
C
= 25
°
C
4
2
T
C
= 125
°
C
T
C
= – 55
°
C
0
0
0.5
1
1.5
2
0
0.6
1.2
1.8
2.4
3
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
800
600
400
200
0
0.035
0.030
0.025
0.020
0.015
C
iss
V
GS
= 4.5 V
V
GS
= 8 V
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
0
10
20
I
D
– Drain Current (A)
30
40
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 6.8 A
I
D
= 6.8 A
8
6
4
2
0
V
DS
= 32 V
V
GS
= 10 V; 4.5 V
V
DS
= 20 V
V
DS
= 10 V
0
3
6
9
12
15
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
4
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
10
1
0.05
0.04
0.03
0.02
0.01
I
D
= 6.8 A
T
J
= 150
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0.1
0.0
0.3
0.6
0.9
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
60
48
36
24
12
0
1.9
1.6
1.3
1
I
D
= 250 μA
0.7
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (
°
C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)
*
10
100 μs
1 ms
1
10 ms
100 ms
0.1
1 s
10 s
DC
T
A
= 25
°
C
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
5
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
6
4
2
0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
4
3
2
1
0
1.25
1.0
0.75
0.50
0.25
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
6
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
1. Duty Cycle, D =
0.02
-4
t
2
2. Per Unit Base = R
= 120 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
-3
0.01
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
7
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
32
24
16
8
10
V
= 10 V thru 4 V
GS
8
6
4
V
= 3 V
GS
T
= 25 °C
C
2
T
1
= 125 °C
C
T
= – 55 °C
V
= 2 V
2.0
C
GS
0
0.0
0
0.5
1.0
1.5
2.5
0
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3100
2480
1860
1240
620
0.035
0.03
C
iss
V
GS
= 4.5 V
0.025
0.02
V
GS
= 8 V
V
GS
= 10 V
C
oss
C
rss
0
0.015
0
10
20
30
40
0
8
16
24
32
40
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 8 A
D
I
= 10 A
D
8
V
= 10 V
GS
V
= 20 V
DS
6
V
= 4.5 V
GS
V
= 10 V
DS
V
= 30 V
DS
4
2
0
0
9
18
27
36
45
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction Temperature (°C)
Q
g
– Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
8
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.15
0.12
0.09
0.06
0.03
0.00
100
10
1
I
= 8 A
D
T
= 150 °C
J
0.1
0.01
T
= 25 °C
J
T
= 125 °C
J
T
= 25 °C
8
J
0.001
0
1
2
3
4
5
6
7
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.5
50
40
30
20
10
0
I
= 250 μA
D
I
= 5 mA
D
0.2
– 0.1
– 0.4
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
0.1
1 s
10 s
T
= 25 °C
A
Single Pulse
DC
BVDSS Limited
10
0.01
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
9
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
6
4
2
0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
4.0
3.2
2.4
1.6
0.8
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
A
– Ambient
T
e
mperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
10
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
This document is subject to change without notice.
Si4554DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 63660
S11-2527-Rev. A, 26-Dec-11
11
This document is subject to change without notice.
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Revision: 01-Jan-2021
Document Number: 91000
1
