Vishay-Intertech-SI4559ADY-T1-GE3
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Si4559ADY
Vishay Siliconix
N- and P-Channel 60 V (D-S) MOSFET
FEATURES
S
O-8 Dual
D
2
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• Material categorization:
D
2
6
5
D
1
7
D
1
8
for definitions of compliance please see
Available
4
G
2
3
S
2
APPLICATIONS
2
G
1
• CCFL Inverter
1
S
1
D
1
Top View
S
2
PRODUCT SUMMARY
G
2
N-CHANNEL
P-CHANNEL
G
1
V
DS
(V)
60
0.058
0.072
6
-60
0.120
0.150
8
R
R
DS(on)
(
) at V
GS
DS(on)
(
) at V
GS
=
=
10 V
4.5 V
Q
g
typ. (nC)
D
(A)
a
Configuration
S
1
D
2
I
5.3
-3.9
N-Channel MOSFET
P-Channel MOSFET
N- and p-pair
ORDERING INFORMATION
Package
SO-8
Lead (Pb)-free
Lead (Pb)-free and halogen-free
Si4559ADY-T1-E3
Si4559ADY-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain-source voltage
Gate-source voltage
V
DS
60
20
-60
20
V
V
GS
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
5.3
4.3
4.3
b, c
3.4
b, c
20
-3.9
-3.2
-3
b, c
-2.4
b, c
-25
Continuous drain current (T
J
= 150 °C)
I
D
Pulsed drain current (10 μs pulse width)
Source drain current diode current
I
DM
I
S
I
SM
I
AS
A
T
C
= 25 °C
2.6
1.7
b, c
20
-2.8
-1.7
b, c
-25
T
A
= 25 °C
Pulsed source-drain current
Single pulse avalanche current
Single pulse avalanche energy
11
6.1
3.1
15
11
3.4
L = 0.1 mH
T
C
= 25 °C
E
AS
mJ
W
T
C
= 70 °C
2
2.2
2
b, c
1.3
b, c
Maximum power dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
2
b, c
1.3
b, c
Operating junction and storage temperature range
THERMAL RESISTANCE RATINGS
PARAMETER
T
J
, T
stg
-55 to +150
°C
N-CHANNEL
P-CHANNEL
SYMBOL
UNIT
TYP.
55
MAX.
62.5
40
TYP.
53
MAX.
62.5
37
Maximum junction-to-ambient
b, d
Maximum junction-to-foot (drain)
t
10 s
R
thJA
R
thJF
°C/W
Steady state
33
30
Notes
a. Based
on T
C
= 25 °C
b. Surface
mounted on 1″ x 1″ FR4 board
c. t
= 10 s
d. Maximum
under steady state conditions is 110 °C/W for N-channel and P-channel
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
a
MAX. UNIT
Static
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
60
-60
–
–
–
–
–
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate threshold voltage
V
DS
V
DS
/T
J
VG
S(th)
/T
J
V
GS(th)
V
55
-50
-6
4
–
–
I
D
= -250 μA
–
–
mV
I
D
= 250 μA
–
–
I
D
= -250 μA
–
–
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
1
-1
–
3
V
–
-3
100
-100
1
–
Gate-body leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
nA
–
–
V
DS
= 60 V, V
GS
= 0 V
–
–
V
DS
= -60 V, V
GS
= 0 V
–
–
-1
10
-10
–
Zero gate voltage drain current
On-state drain current
b
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
–
–
V
DS
= -60 V, V
GS
= 0 V, T
J
= 55 °C
–
–
V
DS
5 V, V
GS
= 10 V
20
-25
–
–
V
DS
-5 V, V
GS
= -10 V
V
GS
= 10 V, I
D
= 4.3 A
–
–
0.046 0.058
0.100 0.120
0.059 0.072
0.126 0.150
V
GS
= -10 V, I
D
= -3.1 A
GS
= 4.5 V, I
D
= 3.9 A
GS
= -4.5 V, I
D
= -0.2 A
–
Drain-source on-state resistance
b
S
V
–
V
–
V
DS
= 15 V, I
D
= 4.3 A
V
DS
= -15 V, I
D
= -3.1 A
–
15
–
–
Forward transconductance
b
Dynamic
a
–
8.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
665
650
75
95
40
60
13
14.5
6
–
–
Input capacitance
C
iss
C
oss
C
rss
N-Channel
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
–
Output capacitance
pF
–
P-Channel
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
V
–
Reverse transfer capacitance
–
V
DS
= 30 V, V
GS
= 10 V, I
D
= 4.3 A
V
DS
= -30 V, V
GS
= -10 V, I
D
= -3.1 A
20
22
9
Total gate charge
Q
g
8
12
–
N-Channel
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 4.3 A
nC
2.3
2.2
2.6
3.7
2
Gate-source charge
Gate-drain charge
Gate resistance
Q
gs
Q
gd
R
g
–
P-Channel
DS
= -30 V, V
GS
= -4.5 V, I
D
= -3.1 A
V
–
–
3
f = 1 MHz
14
20
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
SYMBOL
TEST CONDITIONS
MIN. TYP.
a
MAX. UNIT
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
15
30
65
70
15
40
10
30
10
10
15
13
20
35
10
30
25
45
100
105
25
60
15
45
15
15
25
20
30
55
15
45
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Channel
DD
= 30 V, R
L
= 8.8
I
D
3.4 A, V
GEN
= 4.5 V, R
g
= 1
V
P-Channel
DD
= -30 V, R
L
= 12.5
I
D
-2.4 A, V
GEN
= -4.5 V, R
g
= 1
Turn-off delay time
Fall time
V
ns
Turn-on delay time
Rise time
N-Channel
DD
= 30 V, R
L
= 8.8
I
D
3.4 A, V
GEN
= 10 V, R
g
= 1
V
P-Channel
DD
= -30 V, R
L
= 12.5
I
D
-2.4 A, V
GEN
= -10 V, R
g
= 1
Turn-off delay time
V
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.6
-2.8
20
-25
1.2
-1.2
60
50
50
60
–
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
A
–
Pulse diode forward current
a
Body diode voltage
–
I
S
= 1.7 A
I
S
= -2 A
0.8
-0.8
30
30
32
35
25
16
5
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
ns
nC
N-Channel
I
F
= 1.7 A, di/dt = 100 A/μs,
T
J
= 25 °C
Q
rr
t
a
P-Channel
I
F
= -2 A, di/dt = -100 A/μs,
T
J
= 25 °C
–
ns
–
Reverse recovery rise time
t
b
14
–
Notes
a. Guaranteed
by design, not subject to production testing
b. Pulse
test; pulse width
300 μs, duty cycle
2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
18
16
14
12
10
8
5
4
3
2
1
0
V
GS
= 10 V thru 4 V
T
= 125 °C
C
6
4
25 °C
3 V
2
– 55 °C
3.0 3.5
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.0
0.5
1.0
V –
Gate-to-Source Voltage (V)
GS
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.080
0.075
0.070
0.065
0.060
0.055
0.050
0.045
0.040
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
2
4
6
8
10 12 14 16 18 20
0
10
20
30
40
50
60
I
D
–
D
r
ain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 30 V
DS
= 4.3 A
V
D
= 10 V
GS
= 4.3 A
I
I
8
6
4
2
0
0
3
6
9
12
15
– 50
– 25
0
T
25
– Junction Temperature (°C)
J
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
10
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
T
= 150 °C
J
I
D
= 4.3 A
T
= 25 °C
J
1
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
25
20
I
D
= 250 µA
15
10
5
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
–
T
e
mperature
(°C)
Time (s)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
10
*
Limited
b
y R
DS(on)
100 µs
1 ms
1
10 ms
100 ms
1 s
0.1
10 s
DC
T
= 25 °C
A
Single Pulse
0.01
0.001
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
>
* V
GS
minimum V
at which R
is specified
DS(on)
GS
Safe Operating Area
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
5
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
6
5
4
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
– Case Temperature (°C)
T
– Case Temperature (°C)
C
C
Current Derating
a
Power Derating
100
10
.
L
I
D
T
=
A
BV
–
V
DD
1
0.000001
0.00001
0.0001
0.001
T
A
– Time In A
v
alanche (s)
Single Pulse Avalanche Capability
Note
a. The
power dissipation P
D
is based on T
J
max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
-3
4. Surface Mounted
0.01
-4
-2
-1
10
10
10
10
1
10
100
600
Square Wa
v
e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wa
v
e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
7
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
20
15
10
5
25
20
15
10
5
V
GS
= 10 V thru 5 V
4 V
T
= 125 °C
C
3 V
7
25 °C
– 55 °C
0
0
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
0
10
20
30
40
50
60
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
D
= 30 V
DS
GS
= 3.1 A
I
I
= 3.1 A
6
4
2
0
– 50
– 25
0
T
25
– Junction
T
e
mperature (°C)
J
50
75 100
125 150 175
0
3
6
9
12
15
Q
– Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
8
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
T
= 150 °C
J
I
D
= 3.1
A
T
= 25 °C
1.0
J
1
0.0
0.2
0.4
0.6
0.8
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
50
40
I
D
= 250 µA
0.2
30
20
0.0
– 0.2
– 0.4
10
0
– 50
– 25
0
25
50
75
100 125 150
-3
-2
-1
10
10
10
1
10
100
600
T
– Temperature (°C)
J
Threshold Voltage
Single Pulse Power
100
I
Limited
DM
Limited
DS(on)
10
1
P(t) = 0.0001
P(t) = 0.001
b
y R
*
I
P(t) = 0.01
P(t) = 0.1
D(on)
Limited
0.1
T
A
= 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDS
S
L
imited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
>
minimum V
at which R
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Case
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
9
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T
– Case Temperature (°C)
C
Current Derating
a
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
.
L
I
D
=
A
T
BV – V
DD
1
0.000001
0
25
50
75
100
125
150
0.00001
0.0001
0.001
T
A
– Time in A
v
alanche (s)
T
– Case Temperature (°C)
C
Power Derating, Junction-to-Foot
Single Pulse Avalanche Capability
Note
a. The
power dissipation P
D
is based on T
J
max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
10
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 8
5
°
C/W
thJA
(t)
3. T
– T
= P
Z
A DM
thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wa
v
e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wa
v
e Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
S09-0393-Rev. B, 09-Mar-09
Document Number: 73624
11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Revision: 01-Jan-2023
Document Number: 91000
1
