Vishay-Intertech-SI4590DY-T1-GE3
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Si4590DY
Vishay Siliconix
N- and P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS tested
• Material categorization:
For definitions of compliance please see
V
DS
(V)
R
DS(on)
(
) MAX.
I
D
(A)
a
Q
g
(TYP.)
0.057 at V
GS
= 10 V
0.072 at V
GS
= 4.5 V
0.183 at V
GS
= -10 V
0.205 at V
GS
= -4.5 V
5.6
4
N-Channel
P-Channel
100
5
-3.4
11.6
-3.2
-100
APPLICATIONS
S
O-8 Dual
D
2
• H bridge / DC-AC inverter
– Brushless
DC motors
D
2
6
5
D
1
7
D
1
8
D
1
S
2
4
G
2
G
2
3
S
2
2
G
1
G
1
1
S
1
Top View
N-Channel MOSFET
P-Channel MOSFET
Ordering Information
:
Si4590DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
D
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
100
-100
V
V
GS
20
T
F
= 25 °C
T
F
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
5.6
4.5
4.5
b,c
3.6
b,c
30
-3.4
-2.7
-2.5
b,c
-2
b,c
-20
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current (100 μs Pulse Width)
Source-Drain Current Diode Current
I
DM
I
S
A
T
F
= 25 °C
T
A
= 25 °C
3
2
b,c
-3.5
-1.9
b,c
Pulsed Source-Drain Current (100 μs Pulse Width)
Single Pulse Avalanche Current
I
SM
I
AS
30
-20
5
-20
L = 0.1 mH
Single Pulse Avalanche Energy
E
AS
1.3
20
mJ
W
T
F
= 25 °C
T
F
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
3.6
4.2
2.3
2.7
Maximum Power Dissipation
P
D
2.3
b,c
1.5
b,c
2.3
b,c
1.5
b,c
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
N-CHANNEL
P-CHANNEL
PARAMETER
SYMBOL
UNIT
TYP.
35
MAX.
TYP.
33
MAX.
55
Maximum Junction-to-Ambient
b,d
Maximum Junction-to-Foot (Drain)
t
10 s
R
thJA
R
thJF
55
35
°C/W
Steady State
20
17
30
Notes
a. Based
on T
F
= 25 °C.
b. Surface
mounted on 1″ x 1″ FR4 board.
c. t
= 10 s.
d. Maximum
under steady state conditions is 90 °C/W (n-channel) and 90 °C/W (p-channel).
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
Static
V
GS
= 0 V, I
D
= 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
100
–
–
–
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA
-100
–
–
70
–
I
D
= -250 μA
–
-103
–
mV/°C
I
D
= 250 μA
–
-5.7
–
I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
DS
= V
GS
, I
D
= -250 μA
–
4.5
–
–
1.5
2.5
-2.5
100
-100
1
V
V
-1.5
–
–
–
–
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
nA
–
V
DS
= 100 V, V
GS
= 0 V
V
DS
= -100 V, V
GS
= 0 V
–
–
–
–
-1
10
-10
–
Zero Gate Voltage Drain Current
On-State Drain Current
b
I
DSS
I
D(on)
R
DS(on)
g
fs
μA
A
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
–
–
V
DS
= -100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 5 V, V
GS
= 10 V
–
–
10
-10
–
–
V
DS
= -5 V, V
GS
= -10 V
V
GS
= 10 V, I
D
= 2 A
–
–
0.047 0.057
0.150 0.183
0.059 0.072
0.165 0.205
V
GS
= -10 V, I
D
= -2 A
–
Drain-Source On-State Resistance
b
S
V
GS
= 4.5 V, I
D
= 1.5 A
GS
= -4.5 V, I
D
= -1 A
–
V
–
V
DS
= 15 V, I
D
= 2 A
–
9
–
–
Forward Transconductance
b
Dynamic
a
V
DS
= -15 V, I
D
= -2 A
–
9.3
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
360
1150
130
65
–
–
Input Capacitance
C
iss
C
oss
C
rss
N-Channel
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
V
–
–
Output Capacitance
pF
–
–
P-Channel
DS
= -50 V, V
GS
= 0 V, f = 1 MHz
V
–
20
–
Reverse Transfer Capacitance
–
40
–
V
DS
= 50 V, V
GS
= 10 V, I
D
= 4.5 A
–
7.5
24
11.5
36
6
V
DS
= -50 V, V
GS
= -10 V, I
D
= -5 A
–
Total Gate Charge
Q
g
–
4
–
11.6
1.2
3.8
2
18
–
N-Channel
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 4.5 A
nC
–
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
–
–
P-Channel
V
DS
= -50 V, V
GS
= -4.5 V, I
D
= -5 A
–
–
–
5
–
0.6
3
3.3
13
6.6
26
f = 1 MHz
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
2
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX. UNIT
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
10
15
Turn-On Delay Time
Rise Time
t
d(on)
7
N-Channel
DD
= 50 V, R
L
= 13.8
I
D
3.6 A, V
GEN
= 10 V, R
g
= 1
11
11
12
65
6
20
V
t
r
20
25
P-Channel
V
DD
= -50 V, R
L
= 12.5
I
D
-4 A, V
GEN
= -10 V, R
g
= 1
Turn-Off Delay Time
Fall Time
t
d(off)
130
15
t
f
20
32
55
73
80
14
42
12
25
40
ns
65
Turn-On Delay Time
Rise Time
t
d(on)
110
150
160
30
N-Channel
DD
= 50 V, R
L
= 13.8
I
D
3.6 A, V
GEN
= 4.5 V, R
g
= 1
V
t
r
P-Channel
DD
= -50 V, R
L
= 12.5
I
D
-4 A, V
GEN
= -4.5 V, R
g
= 1
Turn-Off Delay Time
t
d(off)
V
85
25
Fall Time
t
f
50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3
-3.5
30
-20
1.2
-1.2
60
85
55
190
–
I
S
I
SM
V
SD
t
rr
T
F
= 25 °C
A
–
Pulse Diode Forward Current
a
Body Diode Voltage
–
I
S
= 3.6 A
I
S
= -4 A
0.83
-0.8
30
42
27
93
19
36
11
6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
N-Channel
I
F
= 3.6 A, dI/dt = 100 A/μs, T
J
= 25 °C
Q
rr
t
a
P-Channel
I
F
= -4 A, dI/dt = -100 A/μs, T
J
= 25 °C
–
ns
–
t
b
–
Notes
a. Guaranteed
by design, not subject to production testing.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
3
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
16
12
8
10
V
GS
= 10 V thru 5 V
8
V
GS
= 4 V
6
T
C
= 25
°
C
4
T
C
= 125
°
C
2
4
T
C
= – 55
°
C
V
GS
= 3 V
2.5 3.0
0
0
0.0
1.0
2.0
3.0
4.0
0.0
0.5
1.0
1.5
2.0
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
0.12
0.09
0.06
0.03
0
600
500
400
300
200
100
0
C
i
ss
V
GS
= 4.5 V
V
GS
= 10 V
C
o
ss
C
r
ss
0
4
8
12
16
20
0
20
40
60
80
100
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
D
= 2 A
V
D
S
= 50 V
I
D
= 4.5 A
8
6
4
2
0
V
GS
= 10V
V
D
S
= 25 V
V
GS
= 4.5 V
V
D
S
= 80 V
– 50
– 25
0
25
50
75
100 125 150
0
2
4
6
8
10
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62937
S14-0146-Rev. A, 27-Jan-14
4
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.15
0.12
0.09
0.06
0.03
0
100
10
1
I
D
= 2 A
T
J
= 150
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
2.5
2.3
2.1
1.9
1.7
1.5
1.3
I
D
= 250 μA
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (
s
)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
DM
Limited
Limited by R
D
S
(on)
*
I
D(on)
Limited
10
100 μ
s
1
1 m
s
10 m
s
0.1
100 m
s
1
s
10
s
DC
0.01
T
A
= 25
°
C
BVD
SS
Limited
0.001
0.1
1
10
100
1000
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area, Junction-to-Ambient
5
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8.0
6.0
4.0
2.0
0.0
0
25
50
75
100
125
150
T
F
– Foot Temperature (
°
C)
Current Derating*
5
4
3
2
1
0
0
25
50
75
100
125
150
T
F
– Foot Temperature (
°
C)
Power Derating, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
6
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Note
s
:
P
DM
0.1
0.1
0.05
0.02
t
1
t
2
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Ba
s
e = R
thJA
= 90 °C/W
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
S
ingle Pul
s
e
0.001
4.
S
urface Mounted
0.01
0.0001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
S
ingle Pul
s
e
0.01
0.0001
0.001
0.01
0.1
1
10
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Foot
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
7
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
16
12
8
10
V
GS
= 10 V thru 5 V
8
6
V
GS
= 4 V
T
C
= 25
°
C
4
T
C
= 125
°
C
2
4
T
C
= – 55
°
C
V
GS
= 3 V
2.5 3.0
0
0
0.0
1.0
2.0
3.0
4.0
0.0
0.5
1.0
1.5
2.0
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
0.25
0.20
0.15
0.10
0.05
0
1800
1500
1200
900
600
300
0
V
GS
= 4.5 V
C
i
ss
V
GS
= 10 V
C
r
ss
C
o
ss
0
4
8
12
16
20
0
20
40
60
80
100
I
D
– Drain Current (A)
V
D
S
– Drain-to-
S
ource Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
I
D
= 2 A
V
D
S
= 50 V
I
D
= 5 A
8
6
4
2
0
V
GS
= 10V
V
D
S
= 25 V
V
GS
= 4.5 V
V
D
S
= 80 V
– 50
– 25
0
25
50
75
100 125 150
0
5
10
15
20
25
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62937
S14-0146-Rev. A, 27-Jan-14
8
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, (unless otherwise noted)
0.5
0.4
0.3
0.2
0.1
0
100
10
1
I
D
= 2 A
T
J
= 150
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.2
2.0
1.8
1.6
1.4
1.2
50
40
30
20
10
0
I
D
= 250 μA
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
1000
Time (
s
)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
DM
Limited
Limited by R
D
S
(on)
*
I
D(on)
Limited
10
100 μ
s
1
0.1
1 m
s
10 m
s
100 m
s
1
s
10
s
DC
0.01
0.001
T
A
= 25
°
C
BVD
SS
Limited
0.1
1
10
100
1000
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area, Junction-to-Ambient
9
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4.0
3.0
2.0
1.0
0.0
0
25
50
75
100
125
150
T
F
– Foot Temperature (
°
C)
Current Derating*
5
4
3
2
1
0
0
25
50
75
100
125
150
T
F
– Foot Temperature (
°
C)
Power Derating, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
10
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Si4590DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Note
s
:
P
DM
0.1
0.1
0.05
0.02
t
1
t
2
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Ba
s
e = R
thJA
= 90°C/W
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
S
ingle Pul
s
e
0.001
4.
S
urface Mounted
0.01
0.0001
0.01
0.1
1
10
100
1000
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambien
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
S
ingle Pul
s
e
0.01
0.0001
0.001
0.01
0.1
1
10
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
S14-0146-Rev. A, 27-Jan-14
Document Number: 62937
11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Package Information
Vishay Siliconix
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
q
e
B
A
1
L
0.004″
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
1
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Revision: 01-Jan-2021
Document Number: 91000
1
