Vishay-Intertech-SI4800BDY-T1-GE3
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Si4800BDY
Vishay Siliconix
N-Channel Reduced Q
, Fast Switching MOSFET
g
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Available
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
0.0185 at V
GS
= 10 V
0.030 at V
GS
= 4.5 V
9
7
•
TrenchFET
®
Power MOSFET
30
•
•
High-Efficient PWM Optimized
100 % UIS and R
g
Tested
SO-8
D
S
S
S
G
D
D
1
2
3
4
8
7
6
5
D
D
G
Top View
S
Ordering Information:
Si4800BD
Y
–
T1-E3 (Lead (Pb)-free)
Si4800BD
Y
–
T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
30
40
V
V
GS
25
T
A
= 25 °C
A
= 70 °C
9
6.5
5.0
Continuous Drain Current (T
J
= 150 °C)
a, b
I
D
T
7.0
I
DM
I
S
Pulsed Drain Current (10 µs Pulse Width)
A
Continuous Source Current (Diode Conduction)
a, b
Avalanche Current
2.3
I
AS
E
AS
15
L = 0.1 mH
T
A
= 25 °C
Single-Pulse Avalanche Energy
11.25
mJ
W
2.5
1.6
1.3
0.8
Maximum Power Dissipation
a, b
P
D
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Limits
Parameter
Symbol
Typ.
40
Max.
50
Unit
t
≤
10 s
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
R
thJA
Steady State
Steady State
70
95
°C/W
R
thJF
24
30
Notes:
a. Surface Mounted on FR4 board.
b. t
≤
10 s.
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
1
Si4800BDY
Vishay Siliconix
MOSFET SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
Gate Threshold Voltage
0.8
1.8
100
1
V
V
DS
= 0
V
,
V
GS
=
20 V
Gate-Body Leakage
nA
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 10 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Current
a
30
V
GS
= 10
V
,
I
D
= 9 A
0.0155
0.023
16
0.0185
0.030
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
GS
= 4.5
V
,
I
D
= 7 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= 15
V
,
I
D
= 9 A
I
S
= 2.3 A, V
GS
= 0 V
S
V
V
SD
0.75
1.2
13
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
8.7
1.5
3.5
1.4
7
V
DS
= 15
V
,
V
GS
= 5.0
V
,
I
D
= 9 A
nC
0.5
2.2
15
20
50
25
60
Ω
t
d(on)
t
r
t
d(off)
t
f
12
32
14
30
V
DD
= 15
V
,
R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10
V
,
R
g
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
ns
t
rr
I
F
= 2.3 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
35
30
25
20
15
10
5
40
4 V
V
GS
= 10 thru 5 V
35
T
= – 55 °C
C
25 °C
30
25
20
15
10
5
125 °C
3 V
0
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1200
1000
800
600
400
200
0
0.040
0.032
0.024
0.016
0.008
C
iss
V
= 4.5 V
GS
V
= 10 V
GS
C
oss
C
rss
0.000
0
0
4
8
12
16
20
5
10
I
15
20
25
30
V
DS
– Drain-to-Source Voltage (V)
– Drain Current (A)
D
On-Resistance vs. Drain Current
Capacitance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
V
D
= 10 V
V
D
= 15 V
GS
I =
9 A
DS
= 9 A
I
0
0
– 50
– 25
0
25
50
75
100 125 150
2
4
6
8
10
T –
Junction
T
e
mperature (°C)
J
Q
– Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
3
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.06
0.05
0.04
0.03
0.02
0.01
0.00
50
T
= 150 °C
J
10
I =
9 A
D
T
= 25 °C
1.0
J
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.2
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
150
120
I
D
= 250 µA
0.0
90
60
– 0.2
– 0.4
– 0.6
– 0.8
30
0
– 50
– 25
0
25
50
75
100 125 150
-3
-2
-1
10
10
10
1
10
T
–
T
e
mperature (°C)
J
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
by R
DS(on)*
10
1
1 ms
10 ms
100 ms
1 s
10 s
0.1
T
= 25 °C
C
Single Pulse
DC
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum
V
GS
at which R
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
4
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
0.01
4. Surface Mounted
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
1
